Gate-tunable spin-dependent properties could be induced in graphene at room temperature through magnetic proximity effect by placing it in contact with a metallic ferromagnet. Because strong chemical bonding with the metallic substrate makes gating ineffective, an intervening passivation layer is needed. Previously considered passivation layers result in a large shift of the Dirac point away from the Fermi level, so that unrealistically large gate fields are required to tune the spin polarization in graphene. We show that a monolayer of Au or Pt used as the passivation layer between Co and graphene brings the Dirac point closer to the Fermi level. In the \Co/\Pt/\Gr system the proximity-induced spin polarization in graphene and its gate control are strongly enhanced by the presence of a surface band near the Fermi level. Furthermore, the shift of the Dirac point could be eliminated entirely by selecting submonolayer coverage in the passivation layer. Our findings open a path towards experimental realization of an optimized two-dimensional system with gate-tunable spin-dependent properties.
Electrostatic gating confines and controls the transport of electrons in integrated circuits. Magnons, the quanta of spin waves of the magnetic order, are promising alternative information carriers, but difficult to gate. Here we report that superconducting strips on top of thin magnetic films can totally reflect magnons by its diamagnetic response to the magnon stray fields. The induced large frequency shifts unidirectionally blocks the magnons propagating normal to the magnetization. Two superconducting gates parallel to the magnetization create a magnonic cavity. The option to gate coherent…
We investigate the twist-angle and gate dependence of the proximity-induced exchange coupling in the monolayer transition-metal dichalcogenides (TMDCs) MoSe$_2$ and WSe$_2$ due to the vdW coupling to the ferromagnetic semiconductor CrI$_3$, from first-principles calculations. A model Hamiltonian, that captures the relevant band edges at the $K/K^{\prime}$ valleys of the proximitized TMDCs, is employed to quantify the proximity-induced exchange. Upon twisting from 0° to 30°, we find a transition of the TMDC valence band (VB) edge exchange splitting from about $-2$ to $2$ meV, while the conducti…
Two-dimensional structures that exhibit intriguing magnetic phenomena such as perpendicular magnetic anisotropy and switchable magnetization are of great interests in spintronics research. Herein, the density-functional theory studies reveal the critical impacts of strain and external gating on vacancy-induced magnetism and its spin direction in a graphene-like single layer of zinc oxide (ZnO). In contrast to the pristine and defective ZnO with an O-vacancy, the presence of a Zn-vacancy induces significant magnetic moments to its first neighboring O and Zn atoms due to the charge deficit. We f…
The evolution of information technology has been driven by the discovery of new forms of large magnetoresistance (MR), such as giant magnetoresistance (GMR) and tunnelling magnetoresistance (TMR) in magnetic multilayers. Recently, new types of MR have been observed in much simpler bilayers consisting of ferromagnetic (FM)/nonmagnetic (NM) thin films; however, the magnitude of MR in these materials is very small (0.01 ~ 1%). Here, we demonstrate that NM/FM bilayers consisting of a NM InAs quantum well conductive channel and an insulating FM (Ga,Fe)Sb layer exhibit giant proximity magnetoresista…
We theoretically study the magnetoresistance (MR) of two-dimensional massless Dirac electrons as found on the surface of three-dimensional topological insulators (3D TIs) that is capped by a ferromagnetic insulator (FI). We calculate charge and spin transport by Kubo and Boltzmann theories, taking into account the ladder-vertex correction and the in-scattering due to normal and magnetic disorder. The induced exchange splitting is found to generate an electric conductivity that depends on the magnetization orientation, but its form is very different from both the anisotropic and spin Hall MR. T…
We study supercurrent and proximity vortices in a Josephson junction made of disordered surface states of a three-dimensional topological insulator with a proximity induced in-plane helical magnetization. In a regime where the rotation period of helical magnetization is larger than the junction width, we find supercurrent 0-π crossovers as a function of junction thickness, magnetization strength, and parameters inherent to the helical modulation and surface states. The supercurrent reversals are associated with proximity induced vortices, nucleated along the junction width, where the number of…
Ionic gating is a very popular tool to investigate and control the electric charge transport and electronic ground state in a wide variety of different materials. This is due to its capability to induce large modulations of the surface charge density by means of the electric-double-layer field-effect transistor (EDL-FET) architecture, and has been proven to be capable of tuning even the properties of metallic systems. In this short review, I summarize the main results which have been achieved so far in controlling the superconducting (SC) properties of thin films of conventional metallic super…
We theoretically study the magnetism induced by the proximity effect in the normal metal of ferromagnetic Josephson junction composed of two $s$-wave superconductors separated by ferromagnetic metal/normal metal/ferromagnetic metal junction (${S}/{F}/{N}/{F}/{S}$ junction). We calculate the magnetization in the $N$ by solving the Eilenberger equation. We show that the magnetization arises in the ${N}$ when the product of anomalous Green's functions of the spin-triplet even-frequency odd-parity Cooper pair and spin-singlet odd-frequency odd-parity Cooper pair in the ${N}$ has a finite value. Th…
We report a systematic first-principles investigation of the influence of different magnetic insulators on the magnetic proximity effect induced in graphene. Four different magnetic insulators are considered: two ferromagnetic europium chalcogenides namely EuO and EuS and two ferrimagnetic insulators yttrium iron garnet (YIG) and cobalt ferrite (CFO). The obtained exchange-splitting varies from tens to hundreds of meV. We also find an electron doping induced by YIG and europium chalcogenides substrates, that shift the Fermi level up to 0.78 eV and 1.3 eV respectively, whereas hole doping up to…
The proximity-induced couplings in graphene due to the vicinity of a ferromagnetic insulator are analyzed. We combine general symmetry principles and simple tight-binding descriptions to consider different orientations of the magnetization. We find that, in addition to a simple exchange field, a number of other terms arise. Some of these terms act as magnetic orbital couplings, and others are proximity-induced spin-orbit interactions. The couplings are of similar order of magnitude, and depend on the orientation of the magnetization. A variety of phases, and anomalous Hall effect regimes, are …
Two dimensional (2D) materials provide a unique platform to explore the full potential of magnetic proximity driven phenomena, which can be further used for applications in next generation spintronic devices. Of particular interest is to understand and control spin currents in graphene by the magnetic exchange field of a nearby ferromagnetic material in graphene/ferromagnetic-insulator (FMI) heterostructures. Here, we present the experimental study showing the strong modulation of spin currents in graphene layers by controlling the direction of the exchange field due to FMI magnetization. Owin…
According to Onsager's principle, electrical resistance $R$ of general conductors behaves as an even function of external magnetic field $B$. Only in special circumstances, which involve time reversal symmetry (TRS) broken by ferromagnetism, the odd component of $R$ against $B$ is observed. This unusual phenomenon, called odd-parity magnetoresistance (OMR), was hitherto subtle (< 2%) and hard to control by external means. Here, we report a giant OMR as large as 27% in edge transport channels of an InAs quantum well, which is magnetized by a proximity effect from an underlying ferromagnetic sem…
Longitudinal Spin Seebeck Effect Free from the Proximity Nernst Effect
这封信提供了证据的内在纵向自旋塞贝克效应（LSSE），是免费的从异常能斯特效应（ANE）所造成的外部邻近效应。我们报告的LSSE在Au/Y3 Fe 5 O 12（YIG）和Pt/Cu/YIG系统中的观察，显示LSSE出现时，即使接近ANE的机制被清楚地删除。此外，在传统的Pt/YIG结构中，我们通过比较不同磁化强度和温度梯度配置中的电压将LSSE与ANE分离;发现ANE污染即使在Pt/YIG结构中也小得可以忽略。
Ultra-thin Pt films grown on insulating ferrimagnetic CoFe2O4 (111) epitaxial films display a magnetoresistance upon rotating the magnetization of the magnetic layer. We report here X-ray magnetic circular dichroism (XMCD) recorded at Pt-L2,3 and Pt-M3 edges. The results indicate that the Pt magnetic moment, if any, is below the detection limit (< 0.001 μ$_B$/Pt), thus strongly favoring the view that the presence of CoFe2O4 does not induce the formation of magnetic moments in Pt. Therefore, the observed magnetoresistance cannot be attributed to some sort of proximity-induced magnetic moments a…
The demagnetization and associated magnetocaloric effect in strong-weak-strong ferromagnetic trilayers, upon a reorientation of the strong ferromagnets from parallel to antiparallel magnetization, is simulated using atomistic spin dynamics. The simulations yield non-trivial spin distributions in the antiparallel state, which in turn allows entropy to be calculated directly. Empirical functional forms are obtained for the magnetization distribution in the spacer, differing significantly from some of the commonly used models. Finally, we find that the magnetocaloric effect in the system can be s…
We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In$_{0.75}$Ga$_{0.25}$As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge that involves cool-downs from room temperature under gate bias. We have been able to remove the parallel conduction under high positive bias, but achieving full depletion has proven difficult. We find t…
We theoretically investigate the magnetization inside a normal metal containing the Rashba spin-orbit interaction (RSOI) induced by the proximity effect in an s-wave superconductor/normal metal/ferromagnetic metal/s-wave superconductor (S/N/F/S) Josephson junction. By solving the linearized Usadel equation taking account of the RSOI,we find that the direction of the magnetization induced by the proximity effect in N can be reversed by tuning the RSOI.Moreover, we also find that the direction of the magnetization inside N can be reversed by changing the superconducting phase difference, i.e., J…
We reveal that the interplay between Rashba spin-orbit coupling and proximity-induced magnetization in a two-dimensional electron gas leads to peculiar transport properties and large anisotropy of magnetoresistance. While the related tunneling anisotropic magnetoresistance (TAMR) has been extensively studied before, we predict an effect with a different origin arising from the evolution of a resonant condition with the in-plane rotation of magnetization and having a much larger magnitude. The resonances in the tunneling emerge from a spin-parity-time symmetry of the scattering states. However,…
Tunnelling of electrons in graphene-based junctions is studied theoretically. Graphene is assumed to be deposited either directly on a ferromagnetic insulator or on a few atomic layers of boron nitride which separate graphene from a metallic ferromagnetic substrate. Such junctions can be formed by appropriate external gating of the corresponding system. To describe low-energy electronic states near the Dirac points, certain effective Hamiltonians available in the relevant literature are used. These Hamiltonians include staggered potential and exchange interaction due to ferromagnetic substrate…
Proximity effects in two-dimensional (2D) van der Waals heterostructures offer controllable ways to tailor the electronic band structure of adjacent materials. Exchange proximity in particular is important for making materials magnetic without hosting magnetic ions. Such synthetic magnets could be used for studying magnetotransport in high-mobility 2D materials, or magneto-optics in highly absorptive nominally nonmagnetic semiconductors. Using first-principles calculations, we show that the proximity exchange in monolayer MoSe$_2$ and WSe$_2$ due to ferromagnetic monolayer CrI$_3$ can be tuned…
We present a detailed theoretical study of chiral topological superconductor phases in proximity-superconducting graphene systems based on an effective model inspired by DFT simulations. Inducing s-wave superconductivity to quantum anomalous Hall effect systems leads to chiral topological superconductors. For out-of-plane magnetization we find topological superconducting phases with even numbers of chiral Majorana fermions per edge which is correlated to the opening of a nontrivial gap in the bulk system in the $\mathrm{ K}$-points and their connection under particle-hole symmetry. We show tha…
Van der Waals (vdW) heterostructures consisting of bilayer graphene (BLG) encapsulated within monolayers of strong spin-orbit semiconductor WS$_2$ or ferromagnetic semiconductor Cr$_2$Ge$_2$Te$_6$ (CGT), are investigated. By performing realistic first-principles calculations we capture the essential BLG band structure features, including layer- and sublattice-resolved proximity spin-orbit or exchange couplings. For different relative twist angles (0 or 60$^{\circ}$) of the WS$_2$ layers, and the magnetizations (parallel or antiparallel) of the CGT layers, with respect to BLG, the low energy ba…
We report on first-principle calculations on magnetic proximity effect in a van der Waals heterostructure formed by a graphene monolayer induced by its interaction with a two-dimensional (2D) ferromagnet (chromium tribromide, CrBr3). We observe that the magnetic proximity effect arising from the spin-dependent interlayer coupling depends sensitively on the interlayer electronic configuration. The proximity effect results in spin polarization of graphene orbital by up to 63.6 %, together with a miniband splitting band gap of about 73.4 meV and 8% enhancement in magnetic moment (3.47$μ$B/cell) i…
We use magneto-conductivity to study the magnetic proximity effect on surface states of doped topological insulators. Our bilayers consist of a layer of Fe$_7$Se$_8$, which is a metallic ferrimagnet and a layer of Bi$_{0.8}$Sb$_{1.2}$Te$_{3}$ which is a highly hole-doped topological insulator. Using transport measurements and a modified Hikami-Larkin-Nagaoka model, we show that the ferromagnet shortens significantly the effective coherence length of the surface states, suggesting that a gap is opened at the Dirac point. We show that the magnetically induced gap persists on surface states which…
Graphene on an insulating ferromagnetic substrate---ferromagnetic insulator or ferromagnetic metal with a tunnel barrier---is expected to exhibit giant proximity exchange and spin-orbit couplings. We use a realistic transport model of charge-disorder scattering and solve the linearized Boltzmann equation numerically exactly for the anisotropic Fermi contours of modified Dirac electrons to find magnetotransport signatures of these proximity effects: proximity anisotropic magnetoresistance, inverse spin-galvanic effect, and the planar Hall resistivity. We establish the corresponding anisotropies…
In this letter we present emergent screening of magnetic monopole and dipole by the presence of 20nm aluminum cover layer. Our results were obtained in base of magnetic atomic force measurements, performed after external magnetic field steps application. We show that the evolution of magnetization and monopole population is affected by the aluminum presence and attribute that phenomena to the proximity effect, which is responsible for the magnetization vanish of the firstatomic layers at the interface. Using experimental values to estimate the decrease in the nano-magnetic dipole value used in…
We propose a realization of chiral Majorana modes propagating on the hinges of a 3D antiferromagnetic topological insulator, which was recently theoretically predicted and experimentally confirmed in the tetradymite-type $\mathrm{MnBi_2Te_4}$-related ternary chalgogenides. These materials consist of ferromagnetically ordered 2D layers, whose magnetization direction alternates between neighboring layers, forming an antiferromagnetic order. Besides surfaces with a magnetic gap, there also exsist gapless surfaces with a single Dirac cone, which can be gapped out when proximity coupled to an $s$-w…
We study the effects of electrostatic gating on the magnetization auto-oscillations induced by the local injection of electric current into a ferromagnet/heavy metal bilayer. We find that the characteristic currents required for the excitation, the intensity and the spectral characteristics of the generated dynamical states can be tuned by the voltage applied to the metallic gate separated from the bilayer by a thin insulating layer. We show that the effect of electrostatic gating becomes enhanced in the strongly nonlinear oscillation regime at sufficiently large driving currents. Analysis sho…
We explore proximity-induced magnetocaloric effect (MCE) on transition metal dichalcogenides, focusing on a two-dimensional (2D) MoTe$_2$ monolayer deposited on a ferromagnetic semiconductor EuO substrate connected to a heat source. We model this heterostructure using a tight-binding model, incorporating exchange and Rashba fields induced by proximity to EuO, and including temperature through Fermi statistics. The MCE is induced on the 2D MoTe$_2$ layer due to the EuO substrate, revealing large spin-polarized entropy changes for energies out of the band gap of the MoTe$_2$-EuO system. By gatin…
The recently discovered two-dimensional (2D) magnetic insulator CrI$_3$ is an intriguing case for basic research and spintronic applications since it is a ferromagnet in the bulk, but an antiferromagnet in bilayer form, with its magnetic ordering amenable to external manipulations. Using first-principles quantum transport approach, we predict that injecting unpolarized charge current parallel to the interface of bilayer-CrI$_3$/monolayer-TaSe$_2$ van der Waals heterostructure will induce spin-orbit torque (SOT) and thereby driven dynamics of magnetization on the first monolayer of CrI$_3$ in d…
We have studied the proximity-induced superconducting triplet pairing in CoO$_x$/Py1/Cu/Py2/Cu/Pb spin-valve structure (where Py = Ni$_{0.81}$Fe$_{0.19}$). By optimizing the parameters of this structure we found a triplet channel assisted full switching between the normal and superconducting states. To observe an "isolated" triplet spin-valve effect we exploited the oscillatory feature of the magnitude of the ordinary spin-valve effect $ΔT_c$ in the dependence of the Py2-layer thickness $d_{Py2}$. We determined the value of $d_{Py2}$ at which $ΔT_c$ caused by the ordinary spin-valve effect (th…
We show that ideal memristors - devices whose resistance is proportional to the charge that flows through them - can be realized using spin torque-driven viscous magnetization dynamics. The latter can be accomplished in the spin liquid state of thin-film heterostructures with frustrated exchange, where memristive response is tunable by proximity to the glass transition, while current-induced Joule heating facilitates nonvolatile operation and second-order memristive functionality beneficial for neuromorphic applications. Ideal memristive behaviors can be achieved in other systems characterized…
The extreme versatility of two-dimensional van der Waals (vdW) materials derives from their ability to exhibit new electronic properties when assembled in proximity with dissimilar crystals. For example, although graphene is inherently non-magnetic, recent work has reported a magnetic proximity effect in graphene interfaced with magnetic substrates, potentially enabling a pathway towards achieving a high-temperature quantum anomalous Hall effect. Here, we investigate heterostructures of graphene and chromium trihalide magnetic insulators (CrI$_3$, CrBr$_3$, and CrCl$_3$). Surprisingly, we are …
We theoretically study the Josephson effect in a superconductor/normal metal/superconductor ({\it S}/{\it N}/{\it S}) Josephson junction composed of $s$-wave {\it S}s with {\it N} which is sandwiched by two ferromagnetic insulators ({\it F}s), forming a spin valve, in the vertical direction of the junction. We show that the 0-$π$ transition of the Josephson critical current occurs with increasing the thickness of {\it N} along the junction. This transition is due to the magnetic proximity effect (MPE) which induces ferromagnetic magnetization in the {\it N}. Moreover, we find that, even for fi…
Bi$_{2}$Te$_{3}$ and Bi$_{2}$Se$_{3}$ are well known 3D-topological insulators. Films made of these materials exhibit metal-like surface states with a Dirac dispersion and possess high mobility. The high mobility metal-like surface states can serve as channel material for TI-based field effect transistors. While such a transistor offers superior terminal characteristics, they suffer from an inherent zero band gap problem. The absence of a band gap for the surface states prevents an easy turn-off mechanism. In this work, techniques that can be employed to easily open a band gap for the TI surfa…
Electric-field control of magnetization dynamics is fundamentally and technologically important for future spintronic devices. Here, based on electric-field control of both magnetic anisotropy and spin--orbit torque, two distinct methods are presented for switching the magnetization in topological insulator (TI)/magnetic-TI hybrid systems. The magnetic anisotropy energy in magnetic TIs is formulated analytically as a function of the Fermi energy, and it is confirmed that the out-of-plane magnetization is always favored for the partially occupied surface band. Also proposed is a transistor-like…
Van der Waals (vdW) heterostructures formed by two-dimensional magnets and semiconductors have provided a fertile ground for fundamental science and for spintronics. We present first-principles calculations finding a proximity exchange splitting of 14 meV equivalent to an effective Zeeman field of 120 T in the vdW magnet-semiconductor heterostructure MoS$_2$/CrBr$_3$, leading to a 2D spin-polarized half-metal with carrier densities ranging up to $10^{13}$ cm$^{-2}$. We consequently explore the effect of large exchange coupling on the electronic bandstructure when the magnetic layer hosts chira…
