Mechanism of superconductivity (SC) in a purely interacting electron system has been one of the most challenging issues in condensed matter physics. In the BCS theory, the Landau's Fermi liquid is a normal state against which an SC instability occurs once an \emph{additional} pairing force is added. We show that in the doped Mott insulator an \emph{intrinsic} SC ground state (specifically a Luther-Emery state in a finite-doping two-leg $t$-$J$ ladder) can be directly turned into a Fermi-gas-like state by merely switching off the hidden statistical sign structure via two schemes. It points to a new pairing paradigm, %beyond the resonating-valence-bond scheme, which is an "Amperean-like pairing" with a "stringlike" pairing force as shown by an adiabatic continuity to a strong anisotropic limit of the model.
Motivated by the commonplace observation of Mott insulators away from integer filling, we construct a simple thermodynamic argument for phase separation in first-order doping-driven Mott transitions. We show how to compute the critical dopings required to drive the Mott transition using electronic structure calculations for the titanate family of perovskites, finding good agreement with experiment. The theory predicts the transition is percolative and should exhibit Coulomb frustration.
We use a nonequilibrium implementation of extended dynamical mean field theory to study the effect of dynamical screening in photo-excited Mott insulators. The insertion of doublons and holes adds low-energy screening modes and leads to a reduction of the Mott gap. The coupling to low-energy bosonic modes further- more opens new relaxation channels and significantly speeds up the thermalization process. We also consider the effect of the energy distribution of the doped carriers on the screening.
We derived a simple metal-insulator criterion in analytical form for the doped Mott-Hubbard materials. Its readings closely related to the orbital and spin nature of the ground states of the unit cell. The available criterion readings (metal or insulator) in the paramagnetic phase points to the possibility of the insulator state of doped materials with the forbidden first removal electron states. According to its physical meaning the result is similar to Wilsons criterion in the itinerant electron systems. An application of the criterion to the high-Tc cuprates discussed.
Numerically exact simulation of photo-doped Mott insulators
University of Hamburg（汉堡大学）；University of Michigan（密歇根大学）；Graz University of Technology（格拉茨工业大学）；Tel Aviv University（特拉维夫大学）；The Hamburg Centre for Ultrafast Imaging（汉堡超快成像中心）
本文提出利用数值精确的稳态Quantum Monte Carlo技术，结合时间局域分布函数ansatz，计算Mott绝缘体中长寿命光掺杂态的性质，发现Mott能隙对大光掺杂保持稳健且准粒子性质被强重整化。
Bad-Metal (BM) behavior featuring linear temperature dependence of the resistivity extending to well above the Mott-Ioffe-Regel (MIR) limit is often viewed as one of the key unresolved signatures of strong correlation. Here we associate the BM behavior with the Mott quantum criticality by examining a fully frustrated Hubbard model where all long-range magnetic orders are suppressed, and the Mott problem can be rigorously solved through Dynamical Mean-Field Theory. We show that for the doped Mott insulator regime, the coexistence dome and the associated first-order Mott metal-insulator transiti…
The Mott insulating phase of the parent compounds is frequently taken as starting point for the underdoped high-$T_c$ cuprate superconductors. In particular, the pseudogap state is often considered as deriving from the Mott insulator. In this work, we systematically investigate different weakly-doped Mott insulators on the square and triangular lattice to clarify the relationship between the pseudogap and Mottness. We show that doping a two-dimensional Mott insulator does not necessarily lead to a pseudogap phase. Despite its inherent strong-coupling nature, we find that the existence or absen…
The Electronic States of Two Oppositely doped Mott Insulators Bilayers
我们研究了两个相反掺杂的低维tJ模型系统之间的库仑相互作用效应。我们精确地证明了，在一维情况下，任意的弱相互作用导致电荷中性的电子-空穴对的形成。然后，我们使用两种不同的平均场论来解决二维的情况下，层间激子也形成和凝聚。我们建议，这将导致新的功能，没有类似的单层，如绝缘自旋液相的出现。我们简单的双层模型可能与掺杂的莫特绝缘体界面和新的四层Ba 2CaCu 4 O 8化合物的物理学有关。
We propose a phenomenological understanding of the recently discovered weak Mott insulator in the moiré superlattice of twisted bilayer graphene, especially the emergent superconductivity at low temperature within the weak Mott insulator phase, namely while lowering temperature, the longitudinal resistivity first grows below temperature $T_m$, but then rapidly drops to zero at even lower temperature $T_c$. An emergent superconductor in an insulator phase is very unusual. Here we propose that this phenomenon is due to the pure two-dimensional nature of the bilayer graphene moiré superlattice. W…
Despite many efforts to rationalize the strongly correlated electronic ground states in doped Mott insulators, the nature of the doping induced insulator to metal transition is still a subject under intensive investigation. Here we probe the nanoscale electronic structure of the Mott insulator Sr$_2$IrO$_{4-δ}$ with low-temperature scanning tunneling microscopy and find enhanced local density of states (LDOS) inside the Mott gap at the location of individual apical oxygen site defects. We visualize paths of enhanced conductance arising from the overlapping of defect states which induces finite…
We investigate the nature of doped Mott insulators using exact diagonalization and density matrix renormalization group methods. Persistent spin currents are revealed in the ground state, which are concomitant with a nonzero total momentum or angular momentum associated with the doped hole. The latter determines a nontrivial ground state degeneracy. By further making superpositions of the degenerate ground states with zero or unidirectional spin currents, we show that different patterns of spatial charge and spin modulations will emerge. Such anomaly persists for the odd numbers of holes, but …
A slave-fermion gauge-theory approach of the t-J model: Doping-induced complex magnetic structure and Z$_{2}$ spin-gapped anomalous metal in an antiferromagnetic doped Mott insulator
Superconductivity in underdoped cuprates emerges from an unusual electronic state characterised by nodal quasiparticles and an antinodal pseudogap. The relation between this state and superconductivity is intensely studied but remains controversial. The discrimination between competing theoretical models is hindered by a lack of electronic structure data from related doped Mott insulators. Here we report the doping evolution of the Heisenberg antiferromagnet Sr$_2$IrO$_4$, a close analogue to underdoped cuprates. We demonstrate that metallicity emerges from a rapid collapse of the Mott gap wit…
With the hierarchical Green's function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green's function and related multiple-point correlation functions, and find that the separation of the spin and charge degrees of freedom of the electrons is an intrinsic character of the doped Mott insulator. For enough of large on-site repulsive Coulomb interaction, we show that the spectral weight of the one-particle Green's function is proportional to the hole doping concentration that is mainly produced by the …
Motivated by the recently experimental reported signatures of the tunable Mott insulating state and superconductivity in an ABC graphene trilayer superlattice, we investigate the charge compressibility, the spin correlation, and the superconducting instability within the Hubbard model on a three-layer honeycomb lattice. It is found that an antiferromagnetically ordered Mott insulator emerges beyond a critical $U_c$ at half-filling, and the electronic correlation drives a $d+id$ superconducting pairing to be dominant over other pairing patterns in a wide doped region. The effective pairing inte…
The effective Mott gap measured by scanning tunneling microscopy (STM) in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ differs greatly from values reported by photoemission and optical experiments. Here, we show that this is a consequence of the poor electronic screening of the tip-induced electric field in this material. Such effects are well known from STM experiments on semiconductors, and go under the name of tip-induced band bending (TIBB). We show that this phenomenon also exists in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ and t…
We report on the study of insulator-to-metal transition in post-perovskite compound CaIrO3. It is discovered that a gradual chemical substitution of calcium by yttrium leads to the onset of strong metallic behavior in this compound. This observation is in stark contrast to BaIrO3, which preserves its Mott insulating behavior despite excess of charge carriers due to yttrium doping. Magnetic measurements reveal that both compounds tend to exhibit magnetic character irrespective of the chemical substitution of Ca or Ba. We analyze these unusual observations in light of recent researches that sugg…
The first indication of a pseudogap in cuprates came from a sudden decrease of NMR Knight shift at a doping-dependent temperature $T^*(δ)$. Since then, experiments have found phase transitions at a lower $T^*_\text{phase}(δ)$. Using plaquette cellular dynamical mean-field for the square-lattice Hubbard model at high temperature, where the results are reliable, we show that $T^*(δ)$ shares many features of $T^*_\text{phase}(δ)$. The remarkable agreement with several experiments, including quantum critical behavior of the electronic specific heat, supports the view that the pseudogap is controll…
