Appearance of Universal Metallic Dispersion in a Doped Mott Insulator
S. Sahrakorpi, R. S. Markiewicz, Hsin Lin, M. Lindroos, X. J. Zhou, T. Yoshida, W. L. Yang, T. Kakeshita, H. Eisaki, S. Uchida, Seiki Komiya, Yoichi Ando, F. Zh… 展开作者
S. Sahrakorpi, R. S. Markiewicz, Hsin Lin, M. Lindroos, X. J. Zhou, T. Yoshida, W. L. Yang, T. Kakeshita, H. Eisaki, S. Uchida, Seiki Komiya, Yoichi Ando, F. Zhou, Z. X. Zhao, T. Sasagawa, A. Fujimori, Z. Hussain, Z. -X. Shen, A. Bansil
We have investigated the dispersion renormalization $Z_{disp}$ in La$_{2-x}$Sr$_x$CuO$_4$ (LSCO) over the wide doping range of $x=0.03-0.30$, for binding energies extending to several hundred meV's. Strong correlation effects conspire in such a way that the system exhibits an LDA-like dispersion which essentially `undresses' ($Z_{disp}\to 1$) as the Mott insulator is approached. Our finding that the Mott insulator contains `nascent' or `preformed' metallic states with a vanishing spectral weight offers a challenge to existing theoretical scenarios for cuprates.
The physics of doped Mott insulators remains controversial after decades of active research, hindered by the interplay among possible competing orders and fluctuations. It is thus highly desired to distinguish the intrinsic characters of the Mott-metal crossover from those of other origins. We investigate the evolution of electronic structure and dynamics of the hole-doped J=1/2 Mott insulator Sr2IrO4. The effective hole doping is achieved by replacing Ir with Rh atoms, with the chemical potential immediately jumping to or near the top of the lower Hubbard band. The doped iridates exhibit mult…
We study evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the Green function G), interference of the zero surfaces of G with the pole surfaces becomes crucial in the doped Mott insulators. Mutually interfering pole and zero surfaces are dramatically transferred over the Mott gap, when lightly doped holes synergetically loosen the doublon-holon binding. The heart of the Mott physics such as the pseudogap, hole pockets, Fer…
Motivated by the commonplace observation of Mott insulators away from integer filling, we construct a simple thermodynamic argument for phase separation in first-order doping-driven Mott transitions. We show how to compute the critical dopings required to drive the Mott transition using electronic structure calculations for the titanate family of perovskites, finding good agreement with experiment. The theory predicts the transition is percolative and should exhibit Coulomb frustration.
We use a nonequilibrium implementation of extended dynamical mean field theory to study the effect of dynamical screening in photo-excited Mott insulators. The insertion of doublons and holes adds low-energy screening modes and leads to a reduction of the Mott gap. The coupling to low-energy bosonic modes further- more opens new relaxation channels and significantly speeds up the thermalization process. We also consider the effect of the energy distribution of the doped carriers on the screening.
We study the doping driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron or hole driven transitions is found. The electron doped MIT at larger U is similar to the one found in the single band Hubbard model, with a first order character due to coexistence of solutions. The hole doped MIT, in contrast, is second order and can be described as the delocalization of Zhang-Rice singlets.
We derived a simple metal-insulator criterion in analytical form for the doped Mott-Hubbard materials. Its readings closely related to the orbital and spin nature of the ground states of the unit cell. The available criterion readings (metal or insulator) in the paramagnetic phase points to the possibility of the insulator state of doped materials with the forbidden first removal electron states. According to its physical meaning the result is similar to Wilsons criterion in the itinerant electron systems. An application of the criterion to the high-Tc cuprates discussed.
Dynamical mean-field theory is employed to calculate the electronic charge reconstruction of multilayered inhomogeneous devices composed of semi-infinite metallic lead layers sandwiching barrier planes of a strongly correlated material (that can be tuned through the metal-insulator Mott transition). The main focus is on barriers that are doped Mott insulators, and how the electronic charge reconstruction can create well-defined Mott insulating regions in a device whose thickness is governed by intrinsic materials properties, and hence may be able to be reproducibly made.
The dynamical mean-field method is used to formulate a computationally tractable theory of electron-phonon interactions in systems with arbitrary local electron-electron interactions in the physically relevant adiabatic limit of phonon frequency small compared to electron bandwidth or interaction scale. As applications, the phonon contribution to the effective mass of a carrier in a lightly doped Mott insulator is determined and the phase separation boundary is discussed.
Numerically exact simulation of photo-doped Mott insulators
University of Hamburg（汉堡大学）；University of Michigan（密歇根大学）；Graz University of Technology（格拉茨工业大学）；Tel Aviv University（特拉维夫大学）；The Hamburg Centre for Ultrafast Imaging（汉堡超快成像中心）
本文提出利用数值精确的稳态Quantum Monte Carlo技术，结合时间局域分布函数ansatz，计算Mott绝缘体中长寿命光掺杂态的性质，发现Mott能隙对大光掺杂保持稳健且准粒子性质被强重整化。
This paper presents numerical studies of the single hole tt't''J model that address the interplay between the kinetic energy of itinerant electrons and the exchange energy of local moments as of interest to doped Mott insulators. Due to this interplay, two different spin correlations coexist around a mobile vacancy. These local correlations provide an effective two-band picture that explains the two-band structure observed in various theoretical and experimental studies, the doping dependence of the momentum space anisotropic pseudogap phenomena and the asymmetry between hole and electron dope…
We propose the projected BCS wave function as the ground state for the doped Mott insulator SrCu2(BO3)2 on the Shastry-Sutherland lattice. At half filling this wave function yields the exact ground state. Adding mobile charge carriers, we find a strong asymmetry between electron and hole doping. Upon electron doping an unusual metal with strong valence bond correlations forms. Hole doped systems are d-wave RVB superconductors in which superconductivity is strongly enhanced by the emergence of inhomogeneous plaquette bond order.
Microscopical model of a doped fulleride electronic subsystem taking into account the triple orbital degeneracy of energy states is considered within the configurational-operator approach. Using the Green function method the energy spectrum of the model at integer band filling $n=1$ is calculated, which case corresponds to $AC_{60}$ compounds. Possible correlation-driven metal-insulator transition in the model is discussed.
We show how a lightly doped Mott insulator has hugely enhanced electronic thermal transport at low temperature. It displays universal behavior independent of the interaction strength when the carriers can be treated as nondegenerate fermions and a nonuniversal "crossover" region where the Lorenz number grows to large values, while still maintaining a large thermoelectric figure-of-merit. The electron dynamics are described by the Falicov-Kimball model which is solved for arbitrary large on-site correlation with a dynamical mean-field theory algorithm on a Bethe lattice. We show how these resul…
Trial wavefunctions, constructed explicitly from the unique 2-dimensional Mott insulating state with antiferromagnetic order, are proposed to describe the low-energy states of a Mott insulator slightly doped with holes or electrons. With the state behaving like charged quasi-particles with well-defined momenta, a rigid band is observed. These states have much less pairing correlations than previously studied ones. Small Fermi patches obtained are consistent with recent experiments on high Tc cuprates doped lightly with holes or electrons. States showing the incoherent and spin-bag behaviors ar…
Bad-Metal (BM) behavior featuring linear temperature dependence of the resistivity extending to well above the Mott-Ioffe-Regel (MIR) limit is often viewed as one of the key unresolved signatures of strong correlation. Here we associate the BM behavior with the Mott quantum criticality by examining a fully frustrated Hubbard model where all long-range magnetic orders are suppressed, and the Mott problem can be rigorously solved through Dynamical Mean-Field Theory. We show that for the doped Mott insulator regime, the coexistence dome and the associated first-order Mott metal-insulator transiti…
The spectral weight evolution of the low-dimensional Mott insulator TiOCl upon alkali-metal dosing has been studied by photoelectron spectroscopy. We observe a spectral weight transfer between the lower Hubbard band and an additional peak upon electron-doping, in line with quantitative expectations in the atomic limit for changing the number of singly and doubly occupied sites. This observation is an unconditional hallmark of correlated bands and has not been reported before. In contrast, the absence of a metallic quasiparticle peak can be traced back to a simple one-particle effect.
Predictions are made for the momentum- and carrier-dependent degradation of the Mott gap upon doping in high-Tc cuprates as would be observed in Cu K-edge resonant inelastic x-ray scattering (RIXS). The two-dimensional Hubbard model with second- and third-nearest-neighbor hopping terms has been studied by numerical exact diagonalization. Special emphasis is placed on the particle-hole asymmetry of the Mott gap excitations. We argue that the Mott gap excitations observed by RIXS are significantly influenced by the interaction between charge carriers and antiferromagnetic correlations.
We study the superconducting state of the hole-doped two-dimensional Hubbard model using Cellular Dynamical Mean Field Theory, with the Lanczos method as impurity solver. In the under-doped regime, we find a natural decomposition of the one-particle (photoemission) energy-gap into two components. The gap in the nodal regions, stemming from the anomalous self-energy, decreases with decreasing doping. The antinodal gap has an additional contribution from the normal component of the self-energy, inherited from the normal-state pseudogap, and it increases as the Mott insulating phase is approached…
The Mott insulating phase of the parent compounds is frequently taken as starting point for the underdoped high-$T_c$ cuprate superconductors. In particular, the pseudogap state is often considered as deriving from the Mott insulator. In this work, we systematically investigate different weakly-doped Mott insulators on the square and triangular lattice to clarify the relationship between the pseudogap and Mottness. We show that doping a two-dimensional Mott insulator does not necessarily lead to a pseudogap phase. Despite its inherent strong-coupling nature, we find that the existence or absen…
Interest in many strongly spin-orbit coupled 5d-transition metal oxide insulators stems from mapping their electronic structures to a J=1/2 Mott phase. One of the hopes is to establish their Mott parent states and explore these systems' potential of realizing novel electronic states upon carrier doping. However, once doped, little is understood regarding the role of their reduced Coulomb interaction U relative to their strongly correlated 3d-electron cousins. Here we show that, upon hole-doping a candidate J=1/2 Mott insulator, carriers remain localized within a nanoscale phase separated groun…
We study the effect of Coulomb interaction between two oppositely doped low-dimensional tJ model systems. We exactly show that, in the one-dimensional case, an arbitrarily weak interaction leads to the formation of charge neutral electron-hole pairs. We then use two different mean-field theories to address the two-dimensional case, where inter-layer excitons also form and condense. We propose that this results in new features which have no analog in single layers, such as the emergence of an insulating spin liquid phase. Our simple bilayer model might have relevance to the physics of doped Mot…
We study the optical response of a strongly correlated electron system near the metal-insulator transition using a mapping to the sine-Gordon model. With semiclassical quantization, the spectral weight is distributed between a Drude peak and absorption lines due to breathers. We calculate the Drude weight, the optical gap, and the lineshape of breather absorption.
We investigate how the antiferromagnetic Mott insulator evolves into the d-wave BCS superconductor through hole doping. Allowing spin fluctuations in the strong coupling approach, we find a spin-gapped incoherent metal with preformed pairing as an intermediate phase between the antiferromagnetic Mott insulator and d-wave superconductor. This non-Fermi liquid metal is identified with an infrared stable fixed point in the spin-decomposition gauge theory, analogous to the spin liquid insulator in the slave-boson gauge theory. We consider the single particle spectrum and dynamical spin susceptibil…
We investigate the electronic structure of LiV2O4, for which heavy fermion behavior has been observed in various experiments, by the combination of the local density approximation and dynamical mean field theory. To obtain results at zero temperature, we employ the projective quantum Monte Carlo method as an impurity solver. Our results show that the strongly correlated a1g band is a lightly doped Mott insulator which -at low temperatures- shows a sharp (heavy) quasiparticle peak just above the Fermi level, which is consistent with recent photoemission experiment by Shimoyamada et al. [Phys. R…
We study the evolution of the spectral function with progressive hole doping in a Mott insulator, $La_{1-x}Ca_xVO_3$ with $x$ = 0.0 - 0.5. The spectral features indicate a bulk-to-surface metal-insulator transition in this system. Doping dependent changes in the bulk electronic structure are shown to be incompatible with existing theoretical predictions. An empirical description based on the single parameter, $U/W$, is shown to describe consistently the spectral evolution.
Motivated by the recent atomic-scale scanning tunneling microscope (STM) observation for a spatially localized in-gap state in an electron doped Mott insulator, we evaluate the local electronic state of the Hubbard model on the square lattice using the cluster perturbation theory. An in-gap state is found to exist below the upper Hubbard band around the dopant lattice site, which is consistent with the STM measurements. The emergence of this local in-gap state is accompanied with a rapid reduction of the double occupancy of electrons. A similar in-gap state is also found to exist on the triang…
We introduce the notion of superstructure Mottness to describe the Mott and Wigner-Mott transition in doped strongly correlated electron systems at commensurate filling fractions away from one electron per site. We show that superstructure Mottness emerges in an inhomogeneous electron system when the superstructure contains an odd number of electrons per supercell. We argue that superstructure Mottness exists even in the absence of translation symmetry breaking by a superlattice, provided that the extended or intersite Coulomb interaction is strong. In the latter case, superstructure Mottness …
We use inhomogeneous nonequilibrium dynamical mean-field theory to investigate the spreading of photo-excited carriers in Mott insulating heterostructures with strong internal fields. Antiferromagnetic correlations are found to affect the carrier dynamics in a crucial manner: An antiferromagnetic spin background can absorb energy from photo-excited carriers on an ultrafast timescale, thus enabling fast transport between different layers and the separation of electron and hole-like carriers, whereas in the paramagnetic state, carriers become localized in strong fields. This interplay between ch…
Despite many efforts to rationalize the strongly correlated electronic ground states in doped Mott insulators, the nature of the doping induced insulator to metal transition is still a subject under intensive investigation. Here we probe the nanoscale electronic structure of the Mott insulator Sr$_2$IrO$_{4-δ}$ with low-temperature scanning tunneling microscopy and find enhanced local density of states (LDOS) inside the Mott gap at the location of individual apical oxygen site defects. We visualize paths of enhanced conductance arising from the overlapping of defect states which induces finite…
We have studied the critical behaviour of a doped Mott insulator near the metal-insulator transition for the infinite-dimensional Hubbard model using a linearized form of dynamical mean-field theory. The discontinuity in the chemical potential in the change from hole to electron doping, for $U$ larger than a critical value $U_c$, has been calculated analytically and is found to be in good agreement with the results of numerical methods. We have also derived analytic expressions for the compressibility, the quasiparticle weight, the double occupancy and the local spin susceptibility near half-f…
We introduce the concept that there are two generic classes of Mott insulators in nature. They are distinguished by their responses to weak doping. Doped charges form cluster (i.e. distribute inhomogeneously) in type I Mott insulators while distribute homogeneously in type II Mott insulators. We present our opinion on the role inhomogeneity plays in the cuprates.
A theory for the Hubbard model appropriate in the limit of large U/t, small doping away from half-filling and short-ranged antiferromagnetic spin correlations is presented. Despite the absence of any broken symmetry the Fermi surface takes the form of elliptical hole pockets centered near (pi/2,pi/2) with a volume proportional to the hole concentration. Short range antiferromagnetic correlations render the nearest neighbor hopping almost ineffective so that only second or third nearest neighbor hopping contributes appreciably to the dispersion relation.
We demonstrate that a Mott insulator lightly doped with holes is still an insulator at low temperature even without disorder. Hole localization obtains because the chemical potential lies in a pseudogap which has a vanishing density of states at zero temperature. The energy scale for the pseudogap is set by the nearest-neighbour singlet-triplet splitting. As this energy scale vanishes if transitions, virtual or otherwise, to the upper Hubbard band are not permitted, the fundamental length scale in the pseudogap regime is the average distance between doubly occupied sites. Consequently, the pse…
We investigate the nature of doped Mott insulators using exact diagonalization and density matrix renormalization group methods. Persistent spin currents are revealed in the ground state, which are concomitant with a nonzero total momentum or angular momentum associated with the doped hole. The latter determines a nontrivial ground state degeneracy. By further making superpositions of the degenerate ground states with zero or unidirectional spin currents, we show that different patterns of spatial charge and spin modulations will emerge. Such anomaly persists for the odd numbers of holes, but …
We reinvestigate a doped antiferromagnetic Mott insulator based on the slave-fermion approach of the t-J model, where antiferromagnetic spin fluctuations and doped holes are described by bosonic spinons and fermionic holons, respectively. Earlier studies have shown that an effective field theory for the doped antiferromagnetic Mott insulator is given by a non-relativistic fermion (holon) U(1) gauge theory for charge dynamics and a relativistic boson (spinon) U(1) gauge theory for spin dynamics, thus allowing an anomalous metallic phase where bosonic spinons are gapped away from an antiferromag…
Superconductivity in underdoped cuprates emerges from an unusual electronic state characterised by nodal quasiparticles and an antinodal pseudogap. The relation between this state and superconductivity is intensely studied but remains controversial. The discrimination between competing theoretical models is hindered by a lack of electronic structure data from related doped Mott insulators. Here we report the doping evolution of the Heisenberg antiferromagnet Sr$_2$IrO$_4$, a close analogue to underdoped cuprates. We demonstrate that metallicity emerges from a rapid collapse of the Mott gap wit…
We introduce a valence-bond dynamical mean-field theory of doped Mott insulators. It is based on a minimal cluster of two orbitals, each associated with a different region of momentum space and hybridized to a self-consistent bath. The low-doping regime is characterized by singlet formation and the suppression of quasiparticles in the antinodal regions, leading to the formation of Fermi arcs. This is described in terms of an orbital-selective transition in reciprocal space. The calculated tunneling and photoemission spectra are consistent with the phenomenology of the normal state of cuprates.…
The filling-controlled metal-insulator transition (MIT) in a two-dimensional Mott-Hubbard system La1.17-xPbxVS3.17 has been studied by photoemission spectroscopy. With Pb substitution x, chemical potential mu abruptly jumps by ~ 0.07 eV between x=0.15 and 0.17, indicating that a charge gap is opened at x ~= 0.16 in agreement with the Mott insulating state of the d2 configuration. When holes or electrons are doped into the Mott insulator of x ~= 0.16, the gap is filled and the photoemission spectral weight at mu, rho(mu), gradually increases in a similar way to the electronic specific heat coef…
We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both antiferromagnetic and paramagnetic phases. In particular, a metallic antiferromagnetic state is obtained with a low frequency Slater-splitted quasiparticle peak coexisting with Hubbard bands. In the high temperature paramagnetic metallic phase, upon reducing doping, the system has a crossover through a ``bad metal'' state characterized by an anomalous shift o…
We investigate the insulating phases of a frustrated Hubbard model in its strong coupling regime at half-filling. We pay special attention to all the symmetry breaking instabilities that can be described by Dynamical Mean Field Theory (DMFT) on a square plaquette. We identify several mean-field solutions, two Neel states breaking the SU(2) symmetry, a dimer phase and a Mott insulator which doesn't break any symmetry. The singlet to singlet fluctuations soften dramatically in the latter phase, giving rise to dimerization fluctuations as well as chiral fluctuations that are both low-lying. We pr…
The electronic properties of Mott insulators realized in (111) bilayers of perovskite transition-metal oxides are studied. The low-energy effective Hamiltonians for such Mott insulators are derived in the presence of a strong spin-orbit coupling. These models are characterized by the antiferromagnetic Heisenberg interaction and the anisotropic interaction whose form depends on the $d$ orbital occupancy. From exact diagonalization analyses on finite clusters, the ground state phase diagrams are derived, including a Kitaev spin liquid phase in a narrow parameter regime for $t_{2g}$ systems. Slav…
We address the role played by charged defects in doped Mott insulators with active orbital degrees of freedom. It is observed that defects feature a rather complex and rich physics, which is well captured by a degenerate Hubbard model extended by terms that describe crystal-field splittings and orbital-lattice coupling, as well as by terms generated by defects such as the Coulomb potential terms that act both on doped holes and on electrons within occupied orbitals at undoped sites. We show that the multiplet structure of the excited states generated in such systems by strong electron interact…
We study the optical, Raman, and ac Hall response of the doped Mott insulator within the dynamical mean-field theory ($d=\infty$) for strongly correlated electron systems. The occurence of the {\it isosbectic} point in the optical conductivity is shown to be associated with the frequency dependence of the generalized charge susceptibility. We compute the Raman response, which probes the fluctuations of the "stress tensor", and show that the scattering is characterized by appreciable incoherent contributions. The calculated ac Hall constant and Hall angle also exhibit the isosbectic points. The…
With the hierarchical Green's function approach, we study a doped Mott insulator described with the Hubbard model by analytically solving the equations of motion of an one-particle Green's function and related multiple-point correlation functions, and find that the separation of the spin and charge degrees of freedom of the electrons is an intrinsic character of the doped Mott insulator. For enough of large on-site repulsive Coulomb interaction, we show that the spectral weight of the one-particle Green's function is proportional to the hole doping concentration that is mainly produced by the …
The effective Mott gap measured by scanning tunneling microscopy (STM) in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ differs greatly from values reported by photoemission and optical experiments. Here, we show that this is a consequence of the poor electronic screening of the tip-induced electric field in this material. Such effects are well known from STM experiments on semiconductors, and go under the name of tip-induced band bending (TIBB). We show that this phenomenon also exists in the lightly doped Mott insulator $(\rm{Sr}_{1 -x}\rm{La}_x)_2\rm{IrO}_4$ and t…
We report on the study of insulator-to-metal transition in post-perovskite compound CaIrO3. It is discovered that a gradual chemical substitution of calcium by yttrium leads to the onset of strong metallic behavior in this compound. This observation is in stark contrast to BaIrO3, which preserves its Mott insulating behavior despite excess of charge carriers due to yttrium doping. Magnetic measurements reveal that both compounds tend to exhibit magnetic character irrespective of the chemical substitution of Ca or Ba. We analyze these unusual observations in light of recent researches that sugg…
We investigate the Hall effect and the magnetoresistance of strongly correlated electron systems using the dynamical mean-field theory. We treat the low- and high-temperature limits analytically and explore some aspects of the intermediate-temperature regime numerically. We observe that a bipartite-lattice condition is responsible for the high-temperature result $σ_{xy}\sim 1/T^2$ obtained by various authors, whereas the general behavior is $σ_{xy}\sim 1/T$, as for the longitudinal conductivity. We find that Kohler's rule is neither obeyed at high nor at intermediate temperatures.
We present a computation of Cu K-edge resonant inelastic x-ray scattering (RIXS) spectra for electron-doped cuprates which includes coupling to bosonic fluctuations. Comparison with experiment over a wide range of energy and momentum transfers allows us to identify the signatures of three key normal-state energy scales: the pseudogap, charge transfer gap, and Mott gap. The calculations involve a three band Hubbard Hamiltonian based on Cu $d_{x^2-y^2}$ and O $p_x$, $p_y$ orbitals, with a self-energy correction which arises due to spin and charge fluctuations. Our theory reproduces characteristi…
A heterojunction Mott field effect transistor (FET) is proposed that consists of an epitaxial channel material that exhibits an electron-correlation-induced Mott metal-to-insulator transition. The Mott material is remotely (modulation) doped with a degenerately doped conventional band insulator. An applied voltage modulates the electron transfer from the doped band insulator to the Mott material and produces transistor action by inducing an insulator-to-metal transition. Materials parameters from rare-earth nickelates and SrTiO3 are used to assess the potential of the "modulation-doped Mott FE…
We study spin and charge dynamics of stripes in doped Mott insulators by considering a two-dimensional Hubbard model with N fermion flavors. For N =2 we recover the normal one-band model while for N -> infty a spin density wave mean-field solution. For all band fillings, lattice topologies and N= 4 n the model may be solved by means of Monte Carlo methods without encountering the sign problem. At N=4 and in the vicinity of the Mott insulator, the single particle density of states shows a gap. Within this gap and on rectangular topologies of sizes up to 30 X 12 we find gapless spin collective m…
We study real-time dynamics of a charge carrier introduced into undoped Mott insulator propagating under a constant electric field F on the t-J ladder and square lattice. We calculate quasistationary current. In both systems adiabatic regime is observed followed by the positive differential resistivity (PDR) at moderate fields where carrier mobility is determined. Quantitative differences between ladder and 2-dimensional (2D) system emerge when at large fields both systems enter negative differential resistivity (NDR) regime. In the ladder system Bloch-like oscillations prevail, while in 2D th…
Mechanism of superconductivity (SC) in a purely interacting electron system has been one of the most challenging issues in condensed matter physics. In the BCS theory, the Landau's Fermi liquid is a normal state against which an SC instability occurs once an \emph{additional} pairing force is added. We show that in the doped Mott insulator an \emph{intrinsic} SC ground state (specifically a Luther-Emery state in a finite-doping two-leg $t$-$J$ ladder) can be directly turned into a Fermi-gas-like state by merely switching off the hidden statistical sign structure via two schemes. It points to a…
We define a suitable quantity $Z_c$ that measures the pairing strength of two electrons added to the ground state wave function by means of the anomalous part of the one-particle Green's function. $Z_c$ discriminates between systems described by one-electron states, like ordinary metals and band insulators, for which $Z_c=0$, and systems where the single particle picture does not hold, like superconductors and resonating valence bond insulators, for which $Z_c \ne 0$. By using a numerically exact projection technique for the Hubbard model at $U/t=4$, a finite value of $Z_c$, with d-wave symmet…
The first indication of a pseudogap in cuprates came from a sudden decrease of NMR Knight shift at a doping-dependent temperature $T^*(δ)$. Since then, experiments have found phase transitions at a lower $T^*_\text{phase}(δ)$. Using plaquette cellular dynamical mean-field for the square-lattice Hubbard model at high temperature, where the results are reliable, we show that $T^*(δ)$ shares many features of $T^*_\text{phase}(δ)$. The remarkable agreement with several experiments, including quantum critical behavior of the electronic specific heat, supports the view that the pseudogap is controll…
Layered perovskite iridates realize a rare class of Mott insulators that are predicted to be strongly spin-orbit coupled analogues of the parent state of cuprate high-temperature superconductors. Recent discoveries of pseudogap, magnetic multipolar ordered and possible $d$-wave superconducting phases in doped Sr$_2$IrO$_4$ have reinforced this analogy among the single layer variants. However, unlike the bilayer cuprates, no electronic instabilities have been reported in the doped bilayer iridate Sr$_3$Ir$_2$O$_7$. Here we show that Sr$_3$Ir$_2$O$_7$ realizes a weak Mott state with no cuprate a…
The free energy bounds for inhomogeneous current states in doped antiferromagnetic insulators and spatial configurations of spin and charge degrees of freedom in lightly and heavily underdoped phases of this strongly correlated electron system are considered. It is shown that states are characterized by a small parameter of geometric origin, which determines the degree of packing in the knots of filament manyfolds of the order parameter distributions. We found a hierarchy of the spatial scales for flat knots, which gives rise to a free energy gain. A toroid moment in an underdoped state is fou…
Ground State Properties of the Doped Kitaev-Heisenberg Chain: Topological Superconducting and Mott Insulating Phases Driven by Magnetic Frustration
University of Warsaw（华沙大学）；TU Wien（维也纳工业大学）；Technical University Dresden（德累斯顿工业大学）；Institute for Theoretical Solid State Physics, IFW Dresden（德累斯顿联邦材料研究所理论固态物理研究所）
The spin dynamics of electron doped Mott insulators on a triangular lattice is studied based on the $t-J$ model. It is found that the particularly universal behaviors of integrated dynamical spin structure factor seen in the doped Mott insulators on a square lattice, are absent in the doped Mott insulators on a triangular lattice, indicating the presence of the normal state gap. As a result, the spin-lattice relaxation rate 1/$T_{1}$ divided by $T$ reduces with decreasing temperatures in the temperature region above 0.2$J$$\approx$50K, then follows a Curie-Weiss-like behavior at the temperatur…
