Experimental results have shown that the quaternary compound Cu2ZnSnSe4 is an excellent thermoelectric material. This inspires us to seek the other quaternary compounds with similar chemical formula to Cu2ZnSnSe4 as thermoelectric materials. In this paper, we use the first-principle method to systematically explore the electronic and phonon structures, mechanical, thermal and thermoelectric properties of p- and n-type Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge). It is found that the ZT maximum for n-type Ag2SrGeSe4 can reach up to 1.22 at 900 K, and those for p-type Ag2SrSnSe4, Ag2SrGeSe4 and Ag2BaSnSe4 can reach up to 1.20, 1.13 and 1.12, respectively. Our work not only shows that Ag2XYSe4 (X=Ba, Sr; Y=Sn, Ge) are a kind of potential thermoelectric materials, but also can inspire more theoretical and experimental researches on thermoelectric properties of quaternary compounds.
The electronic and phonon transport properties of quaternary tetradymite BiSbSeTe2 are investigated using first-principles approach and Boltzmann transport theory. Unlike the binary counterpart Bi2Te3, we obtain a pair of Rashba splitting bands induced by the absence of inversion center. Such unique characteristic could lead to a large Seebeck coefficient even at relatively higher carrier concentration. Besides, we find an ultralow lattice thermal conductivity of BiSbSeTe2, especially along the interlayer direction, which can be traced to the extremely small phonon relaxation time mainly induc…
Utilizing a material in thermoelectric applications requires a mechanical, thermal, and lattice stability as well a high figure of merit (ZT). In this work, we present the structural, electronic, magnetic, mechanical, thermodynamic, dynamic, and thermoelectric properties of CoFeYGe (Y = Ti, Cr) quaternary Heusler compounds using the density functional theory (DFT). The calculated mechanical properties and phonon dispersions reveal that the structures of these compounds are stable. Both CoFeCrGe and CoFeTiGe compounds show a ferromagnetic and ferrimagnetic half-metallic behavior with band gaps …
We have performed a comprehensive set of first principles calculations to study the structural, elastic, electronic, magnetic and transport properties of new quaternary Heusler compounds CoZrMnX (X =Al, Ga, Ge, In). The results showed that all the quaternary Heusler compounds were stable in Type(I) structure. CoZrMnX are elastically stable and relatively hard materials. CoZrMnAl, CoZrMnGa, and CoZrMnIn are found to be ductile and CoZrMnGe is brittle in nature. The calculated Debye temperatures of all compounds are relatively high. The electronic structure calculations reveal that CoZrMnAl is n…
Calculations using density functional theory (DFT) were performed to investigate the structural, dynamical, mechanical, electronic, magnetic, and thermoelectric properties of VTiRhZ (Z = Al, Ga, In) alloys. The most stable structure of these alloys was found to be the type-I configuration. Using GGA-PBE functional, VTiRhGa, and VTiRhIn alloys are predicted as half-metallic ferromagnets with a 100% spin-polarization and a total magnetic moment of 3μB, which is promising for spintronic applications. The thermoelectric properties and lattice thermal conductivity of VTiRhZ alloys were obtained usi…
Intermetallic compounds with sizable band gaps are attractive for their unusual properties but rare. Here, we present a new family of stable semiconducting quaternary Heusler compounds, designed and discovered by means of high-throughput \textit{ab initio} calculations based on the 18-electron rule. The 99 new semiconductors reported here adopt the ordered quaternary Heusler structure with the prototype of LiMgSnPd (F$\bar{\mathbf{4}}$3m, No.\,216) and contain 18 valence electrons per formula unit. They are realized by filling the void in the half Heusler structure with a small and electroposi…
Reconfigurable magnetic tunnel diodes and transistors are a new concept in spintronics. The realization of such a device requires the use of materials with unique spin-dependent electronic properties such as half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to design within the same family of compounds HMMs and SGSs with similar lattice constants to make coherent growth of the consecutive spacers of the device possible. Employing state-of-the-art first-principles calculations, we scan the quaternary Heusler compounds and i…
The realization of the stable structure of Heusler compounds and the study of different properties is an important step for their potential application in spintronics and magnetoelectronic devices. In this paper, using the plane-wave pseudopotential method within the framework of density functional theory (DFT), we investigate 25 Quaternary Heusler compounds for their electronic, magnetic, and mechanical properties. The Open Quantum Materials Database (OQMD) is used to screen a large number of compounds to narrow down the possible synthesizable materials. The convex-hull distance and elastic c…
The anomalous transport properties of Heusler compounds become a hotspot of research in recent years due to their unique band structure and possible application in spintronics. In this paper, we report the anomalous Hall effect in polycrystalline NiCoMnGa quaternary Heusler compound by experimental means and theoretical calculations. The experimental anomalous Hall conductivity (AHC) was found at about 256 S/cm at 10K with an intrinsic contribution of ~ 121 S/cm. The analysis of Hall data reveals the presence of both extrinsic and intrinsic contributions in AHE. Our theoretical calculations sh…
We report here the electrical transport and magnetic properties of the newly synthesized quaternary Heusler compound CoFeTiSn and CoFeVGa. We observe a striking change in the electronic transport properties of CoFeTiSn as the system undergoes the paramagnetic to ferromagnetic transition. While the sample shows an activated semiconducting behaviour in the paramagnetic phase, it turns abruptly to a metallic phase with the onset of ferromagnetic transition. We have compared the system with other Hesuler compounds showing similar anomaly in transport, and it appears that CoFeTiSn has much similari…
This paper presents a detailed investigation of FeCr-based quaternary Heusler alloys. By using ultrasoft pseudopotential, electronic and magnetic properties of the compounds are studied within the framework of Density Functional Theory (DFT) by using the Quantum Espresso package. The thermodynamic, mechanical, and dynamical stability of the compounds is established through the comprehensive study of different mechanical parameters and phonon dispersion curves. The meticulous study of elastic parameters such as bulk, Young's, shear moduli, etc. is done to understand different mechanical propert…
Based on high throughput density functional theory calculations, we performed systematic screening for spin-gapless semiconductors (SGSs) in quaternary Heusler alloys XX 0 YZ (X, X 0 , and Y are transition metal elements without Tc, and Z is one of B, Al, Ga, In, Si, Ge, Sn, Pb, P, As, Sb, and Bi). Following the empirical rule, we focused on compounds with 21, 26, or 28 valence electrons, resulting in 12, 000 possible chemical compositions. After systematically evaluating the thermodynamic, mechanical, and dynamical stabilities, we successfully identified 70 stable SGSs, confirmed by explicit …
Intrinsically low lattice thermal conductivity ($κ_l$) is a desired requirement in many crystalline solids such as thermal barrier coatings and thermoelectrics. Here, we design an advanced machine-learning (ML) model based on crystal graph convolutional neural network that is insensitive to volumes (i.e., scale) of the input crystal structures to discover novel quaternary chalcogenides, AMM'Q$_3$ (A/M/M'=alkali, alkaline-earth, post-transition metals, lanthanides, Q=chalcogens). Upon screening the thermodynamic stability of $\sim$ 1 million compounds using the ML model iteratively and performi…
Structural stability, electronic band structure, and optoelectronic properties of quaternary chalcogenide CuZn2MS4 (M =In and Ga) compounds via first principles
The development of efficient thermal energy management devices such as thermoelectrics, barrier coatings, and thermal data-storage disks often relies on compounds that possess very low lattice thermal conductivity ($κ_l$). Here, we present the computational prediction of a large family of 628 thermodynamically stable quaternary chalcogenides, AMM'Q$_3$ (A = alkali/alkaline earth/post-transition metals; M/M' = transition metals, lanthanides; Q = chalcogens) using high-throughput density functional theory (DFT) calculations. We validate the presence of low-$κ_l$ in this family of materials by ca…
The Ohmic spin diode (OSD) is a recent concept in spintronics, which is based on half-metallic magnets (HMMs) and spin-gapless semiconductors (SGSs). Quaternary Heusler compounds offer a unique platform to realize the OSD for room temperature applications as these materials possess very high Curie temperatures as well as half-metallic and spin-gapless semiconducting behavior within the same family. Using state-of-the-art first-principles calculations combined with the non-equilibrium Green's function method we design four different OSDs based on half-metallic and spin-gapless semiconducting qu…
In this work, we provide important insights into the evolution of half-metallicity in quaternary Heusler alloys. Employing {\it ab initio} electronic structure methods we study 18 quaternary Heusler compounds having the chemical formula CoX$^\prime$Y$^\prime$Al, where Y$^\prime$ = Mn, Fe; and X$^\prime$ a 4$d$ element. Along with the search for new materials for spintronics applications, the trends in structural, electronic, magnetic properties and Curie temperature were investigated. We have made comparative studies with the compounds in the quaternary series CoX$^{\prime}$Y$^{\prime}$Si with…
The lack of a mechanistic framework for chemical reactions forming inorganic extended solids presents a challenge to accelerated materials discovery. We demonstrate here a combined computational and experimental methodology to tackle this problem, in which in situ X-ray diffraction measurements monitor solid state reactions and deduce reaction pathways, while theoretical computations rationalize reaction energetics. The method has been applied to the La-Cu-S-O quaternary system, following an earlier prediction that enhanced superconductivity could be found in these of new lanthanum copper(II) …
Influence of mixing the low-valent transition metal atoms (Y,Y$^*$=Cr,Mn,Fe) on the properties of the quaternary Co$_2$[Y$_{1-x}$Y$^*_x$]Z (Z=Al,Ga,Si,Ge,Sn) Heusler compounds
我们补充了我们对Co-$_2$-MnZ化合物的掺杂和无序的研究[I. Galanakis \textit{et al.}，Appl. Phys. Lett. \textbf{89}，042502（2006）和K.Özdogan \textit{et al.}，Phys. Rev. B \textbf{74}，（2006）]，以还涵盖四元钴$_2$ [Y $_{1-x}$ Y $^*_x$ ]Z化合物，其中低价过渡金属Y、Y $^*$为Cr、Mn或Fe，且sp原子Z为Al、Ga、Si、Ge、Sn中的一种。这项研究给出了这些化合物的磁性和电子性质的全局概述，因为我们改变了Y和Z元素。我们的研究结果表明，对于实际应用中，最合适的化合物是那些属于家庭的Co $_2$ [Mn $_{1-x}$ Cr $_x$ ]Z与$x>0.5$的$sp$原子的性质无关，因为它们结合了高值的大多数DOS在费米能级由于Cr的存在下，和半金属性与大的带隙。另一方面，Fe的存在大大降低了费米能级处的多数态密度，并且当与属于Si柱的元素结合时，它甚至可以破坏半金属性。
The quaternary Heusler compound NiFeTiSn can be considered to be derived from the exotic pseudogap-compound Fe2TiSn by the replacement of one Fe atom by Ni. In contrast to Fe2TiSn, which shows a disorder-induced ferromagnetic phase, the ground state of NiFeTiSn is antiferromagnetic with the signature of spin canting. Interestingly, NiFeTiSn shows a Griffiths-like phase characterized by isolated ferromagnetic clusters before attaining the antiferromagnetic state. The Griffiths-like phase is possibly associated with the antisite disorder between Fe and Ti sites as evident from our powder X-ray d…
Thermoelectricity is a promising avenue for harvesting energy but large-scale applications are still hampered by the lack of highly-efficient low-cost materials. Recently, Fe$_2YZ$ Heusler compounds were predicted theoretically to be interesting candidates with large thermoelectric power factor. Here, we show that under doping conditions compatible with thermoelectric applications, these materials are prone to an unexpected magnetic instability detrimental to their thermoelectric performance. We rationalize the physics at the origin of this instability, provide guidelines for avoiding it and d…
First principles calculations are performed to investigate the thermodynamical stability, dynamical, mechanical, electronic and magnetic properties of CrTiCoZ (Z= Al/Si) novel quaternary Heusler alloys. Y-type III atomic configuration is found to be the most stable structure for both compounds. The melting temperatures of both compounds are as high as 2142 K and 2420 K for CrTiCoAl and CrTiCoSi, respectively. The electronic structure calculations using GGA-PBE approach show a half metallic behavior of CrTiCoAl. The spin-down channel exhibits a direct band gap of 0.15 eV, whereas the spin-up ch…
The unique structure of Zintl phase makes it an ideal system to realize the concept of phonon-glass and electron-crystal in the thermoelectric community. In this work, by combining first-principles calculations and Boltzmann transport theory for both electrons and phonons, we demonstrate that the ZT value of Zintl compound KSnSb can reach ~2.6 at 800 K. Such extraordinary thermoelectric performance originates from the large Seebeck coefficient due to multi-valley band structures and particularly very small lattice thermal conductivity caused by mixed-bond characteristics.
The electronic and transport properties of the half-Heusler compound LaPtSb are investigated by performing first-principles calculations combined with semi-classical Boltzmann theory and deformation potential theory. Compared with many typical half-Heusler compounds, the LaPtSb exhibits obviously larger power factor at room temperature, especially for the n-type system. Together with the very low lattice thermal conductivity, the thermoelectric figure of merit (ZT) of LaPtSb can be optimized to a record high value of 2.2 by fine tuning the carrier concentration.
We have performed systematic density functional calculations and evaluated thermoelectric properties, See- beck coefficient and anomalous Nernst coefficient of half-Heusler comounds CoMSb(M=Sc, Ti, V, Cr, and Mn). The carrier concentration dependence of Seebeck coefficients in nonmagnetic compounds are in good agreement with experimental values. We found that the half-metallic ferromagnetic CoMnSb show large anomalous Nernst effect originating from Berry curvature at the Brillouin zone boundary. These results help to understanding for the mechanism of large anomalous Nernst coefficient and giv…
Higher-fold chiral fermions that go beyond two-fold Weyl fermions have recently been reported in crystalline systems. Here, we focus on such excitations in several binary, ternary and quaternary alloys/compounds with CoGe, BiSbPt and KMgBO3 as the representative examples that belong to the crystal space group (SG) 198. We found distinct three-fold, four-fold and six-fold chiral fermions in the bulk via Density Functional computations. We provide general symmetry arguments for the protection of these degeneracies with special emphasis on the four-fold fermions. Our surface spectra simulations s…
The layered Bi-chalcogenide compounds have been drawing much attention as a new layered superconductor family since 2012. Due to the rich variation of crystal structure and constituent elements, the development of new physics and chemistry of the layered Bi-chalcogenide family and its applications as functional materials have been expected. Recently, it was revealed that the layered Bi chalcogenides can show a relatively high thermoelectric performance (ZT = 0.36 in LaOBiSSe at ~650 K). Here, we show the crystal structure variation of the Bi-chalcogenide family and their thermoelectric propert…
In order to improve the thermoelectric performance of TiCoSb we have substituted 50% of Ti equally with Zr and Hf at Ti site and Sb with Sn and Se equally at Sb site. The electronic structure of Ti0.5Zr0.25Hf0.25CoSn0.5Se0.5 is investigated using the full potential linearized augmented plane wave method and the thermoelectric transport properties are calculated on the basis of semi-classical Boltzmann transport theory. Our band structure calculations show that Ti0.5Zr0.25Hf0.25CoSn0.5Se0.5 has semiconducting behavior with indirect band gap value of 0.98 eV which follow the empirical rule of 18…
We report the structural, mechanical, electronic, optical, thermoelectric properties and spectroscopic limited maximum efficiency (SLME) of oxide double perovskite structure Ba2SbNbO6 and Ba2SbTaO6 compounds. All the investigations were performed through the first-principles density functional theory (DFT). The obtained values for the elastic constants reveal the mechanical stability of the studied compounds. The calculated data of bulk modulus (B), shear modulus (G), and Young's modulus (E) for Ba2SbTaO6 are found to be greater than those of Ba2SbNbO6. The ratio of Bulk to shear ratio (B/G) s…
Half-Heusler compounds usually exhibit relatively higher lattice thermal conductivity that is undesirable for thermoelectric applications. Here we demonstrate by first-principles calculations and Boltzmann transport theory that the BiBaK system is an exception, which has rather low thermal conductivity as evidenced by very small phonon group velocity and relaxation time. Detailed analysis indicates that the heavy Bi and Ba atoms form a cage-like structure, inside which the light K atom rattles with larger atomic displacement parameters. In combination with its good electronic transport propert…
Thermoelectric power generation has been recognized as one of the most important technologies, and high-performance thermoelectric materials have long been pursued. However, because of the large number of candidate materials, this quest is extremely challenging, and it has become clear that a firm theoretical concept from the viewpoint of band-structure engineering is needed. In this study, we theoretically demonstrate that pnictogen-dichalcogenide layered compounds, which originally attracted attention as a family of superconductors and have recently been investigated as thermoelectric materi…
Kesterite I$_2$-II-IV-V$_4$ semiconductors are promising solar absorbers for photovoltaics applications. The band gap and it's character, either direct or indirect, are fundamental properties determining photovoltaic-device efficiency. We use a combination of accurate first-principles calculations and machine learning to predict the properties of the band gap for a large number of kesterite I$_2$-II-IV-V$_4$ semiconductors. In determining the magnitude of the fundamental gap, we compare results for a number of machine-learning models, and achieve a root mean squared error as low as 283 meV; th…
High-throughput calculations are a very promising tool for screening a large number of compounds in order to discover new useful materials. Ternary intermetallic are thus investigated in the present work to find new compounds potentially interesting for thermoelectric applications. The screening of the stable non-metallic compounds required for such applications is obtained by calculating their electronic structure by DFT methods. In a first part, the study of the density of states at the Fermi level of well-known chemical elements and binary compounds allows to empirically optimize the select…
We found that whisker crystals of Mo-doped Nb4SiTe4 show high thermoelectric performances at low temperatures, indicated by the largest power factor of 70 microW cm-1 K-2 at 230-300 K, much larger than those of Bi2Te3-based practical materials. This power factor is smaller than the maximum value in the 5d analogue Ta4SiTe4, but is comparable to that with a similar doping level. First principles calculation results suggest that the difference in thermoelectric performances between Nb and Ta compounds is caused by the much smaller band gap in Nb4SiTe4 than that in Ta4SiTe4, due to the weaker spi…
Although SbSe2-based layered compounds have been predicted to be high-performance thermoelectric materials and topological materials, most of these compounds obtained experimentally have been insulators so far. Here, we present the effect of Bi substitution on the thermoelectric properties of SbSe2-based layered compounds NdO0.8F0.2Sb1-xBixSe2 (x = 0-0.4). The room temperature electrical resistivity is decreased to 8.0 * 10^-5 ohmm for x = 0.4. The electrical power factor is calculated to be 1.4 * 10^-4 W/mK^2 at 660 K, which is in reasonable agreement with combined Jonker and Ioffe analysis. …
It is generally assumed in the thermoelectric community that the lattice thermal conductivity of a given material is independent of the electronic properties. This perspective is however questionable since the electron-phonon coupling could have certain effects on both the carrier and phonon transport, which in turn will affect the thermoelectric properties. Using SiGe compound as a prototypical example, we give an accurate prediction of the carrier relaxation time by considering scattering from all the phonon modes, as opposed to the simple deformation potential theory. It is found that the c…
LaOBiPbS$_3$ is a kind of pnictogen-dichalcogenide layered compounds, which have recently been experimentally investigated as thermoelectric materials owing to their low thermal conductivity and high controllability of constituent elements. However, thermoelectric performance of LaOBiPbS$_3$ is at present not very high and that of its analogous compounds remains to be unknown. In this study, we theoretically investigate thermoelectric properties of 24 possible variations of the constituent elements in LaOBiPbS$_3$ from the viewpoint of the electronic structure. We find that some compounds can …
We explore the structural, electronic, mechanical and thermoelectric properties of a new half Heusler compound, HfPtPb which is all metallic heavy element and has been recently been proposed to be stable [Nature Chem 7 (2015) 308]. In the present work, we employ density functional theory and semiclassical Boltzmann transport equations with constant relaxation time approximation. The mechanical properties such as Shear modulus, Young modulus, elastic constants, Poisson ratio, and shear anisotropy factor are investigated. The elastic and phonon properties reveal that this compound is mechanicall…
Half-Heusler phases (space group F43m, C1b) have recently captured much attention as promising thermoelectric materials for heat-to-electric power conversion in the mid-to-high temperature range. The most studied ones are the RNiSn-type half-Heusler compounds, where R represents refractory metals Hf, Zr, and Ti. These compounds have shown a high-power factor and high-power density, as well as good material stability and scalability. Due to their high thermal conductivity, however, the dimensionless figure of merit (zT) of these materials has stagnated near 1 for a long time. Since 2013, the ve…
Determining defect types and concentrations remains a big challenge of semiconductor materials science. By using ab-initio thermal conductivity calculations we reveal that Ni/vacancy antisites, and not the previously claimed Sn/Zr antisites, are the dominant defects affecting thermal transport in half-Heusler compound ZrNiSn. Our calculations correctly predict the thermal conductivity dependence with temperature and concentration, in quantitative agreement with published experimental results. Furthermore, we find a characteristic proportionality between phonon-antisite scattering rates and the…
We investigate the thermoelectric properties of CaAl$_2$Si$_2$-type Zintl phase compounds $AB_2X_2$ ($A$ = Mg, Ca, Sr, Ba, $B$ = Mg, Zn, Cd, and $X$ = P, As, Sb) using first principles band calculations within the Boltzmann transport theory assuming the constant relaxation time approximation. We introduce the effective degree of valley degeneracy $n_{TE}$ to focus on the relationship between the thermoelectric properties and the multivalley character of the electronic band structure around the Fermi level. We also introduce a quantity $γ_{TE}$, which takes into account $n_{TE}$ and anisotropy …
Half-Heusler compounds have emerged as promising thermoelectric materials that offer huge compositional space to tune their thermoelectric performance. A class of stable half Heusler compounds formed from elements of three specific groups in the periodic table viz. X$_{p}$X$'_{1-p}$Y$_{q}$Y$'_{1-q}$Z$_{r}$Z$'_{1-r}$ (with X, X$'$= Ti, Zr, Hf, Y, Y$'$ = Ni, Pd, Pt and Z, Z$'$ = Ge, Sn, Pb and p, q, r = 0, 0.25, 0.75 and 1) via various stoichiometric isoelectronic elemental substitution at the X, Y and Z sites respectively is investigated. Intelligent filters are employed at each step of our hig…
Physical properties of Thallium-Tellurium based thermoelectric compounds using first-principles simulations
采用密度泛函理论计算方法，研究了Tl_5Te_3，BiTl_9Te_6和SbTl_9Te_6化合物的热力学和物理性质.优化得到的化合物晶格常数与实验值符合较好。计算了三种化合物的电子态密度和能带结构，以了解它们的成键机制。BiTl 9 Te 6和SbTl 9 Te 6化合物的间接带隙分别为0.256eV和0.374eV。自旋-轨道耦合对两种半导体化合物的电子结构有重要影响，因此应该包括这些材料的良好的数值描述。计算了这三种化合物的弹性常数，测定了它们的体积模量、剪切模量和杨氏模量。Sb、Bi合金化后的韧脆转变与电子性质的变化有关。最后，得到了德拜温度、纵向声速、横向声速和平均声速。
In the present work, we report the experimental thermopower ($α$) data for ZnV$_{2}$O$_{4}$ compound in the high temperature range 300-600 K. The value of $α$ is found to be $\sim$184 and $\sim$126 $μ$V/K at $\sim$300 and $\sim$600 K, respectively. The temperature dependent behavior of $α$ is almost linear in the measured temperature range. To understand the large and positive $α$ value observed in this compound, we have also investigated the electronic and thermoelectric properties by combining the \textit{ab-initio} electronic structures calculations with Boltzmann transport theory. Within t…
