arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1902.03587cond-mat.mtrl-sci
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晶界对多晶太阳电池开路电压影响的定量理论

Quantitative theory of the grain boundary impact on the open-circuit voltage of polycrystalline solar cells

Benoit Gaury, Paul M. Haney

摘要:

薄膜多晶光致发光是一种成熟的商业相关技术。然而,关于晶界在这些材料性能中的作用以及这些缺陷可能限制进一步进展的程度的基本问题仍然存在。在这项工作中,我们首先扩展以前的分析柱状晶界开发一个模型的“倾斜”晶界的复合电流。然后,我们考虑系统与多个,相交的晶界和数值确定的参数空间,我们的分析模型准确地描述了复合电流。我们发现,对于与薄膜光电性能相关的材料参数,我们的模型可以应用于计算具有非均匀晶界网络的材料的开路电压。该模型弥补了纳米级表征观察到的晶界特性分布与其对宏观器件开路电压的影响之间的差距。

英文摘要:

Thin film polycrystalline photovoltaics are a mature, commercially-relevant technology. However, basic questions persist about the role of grain boundaries in the performance of these materials, and the extent to which these defects may limit further progress. In this work, we first extend previous analysis of columnar grain boundaries to develop a model of the recombination current of "tilted" grain boundaries. We then consider systems with multiple, intersecting grain boundaries and numerically determine the parameter space for which our analytical model accurately describes the recombination current. We find that for material parameters relevant for thin film photovoltaics, our model can be applied to compute the open-circuit voltage of materials with networks of inhomogeneous grain boundaries. This model bridges the gap between the distribution of grain boundary properties observed with nanoscale characterization and their influence on the macroscale device open-circuit voltage.

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