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arXiv 1608.07451cond-mat.mtrl-sci
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晶界带电降低多晶太阳电池开路电压的解析描述

Charged grain boundaries reduce the open circuit voltage of polycrystalline solar cells--An analytical description

Benoit Gaury, Paul M. Haney

摘要:

本文给出了具有高缺陷密度正电荷柱状晶界的$pn^+$结的暗电流-电压关系$J(V)$的解析表达式。这些表达式适用于具有足够高的体空穴迁移率的非耗尽晶粒。通过与数值模拟的直接比较,验证了公式的准确性。数值模拟进一步表明,黑暗的$J(V)$可以用来确定开路电位$V_{\rm oc}$的照明结对于给定的短路电流密度$J_{\rm sc}$。提供了晶界性质和$V_{\rm oc}$之间的精确关系,推进了对薄膜多晶光致发光材料如CdTe和$\mathrm{Cu(In,Ga)Se_2}$的效率的晶界的影响的理解。

英文摘要:

Analytic expressions are presented for the dark current-voltage relation $J(V)$ of a $pn^+$ junction with positively charged columnar grain boundaries with high defect density. These expressions apply to non-depleted grains with sufficiently high bulk hole mobilities. The accuracy of the formulas is verified by direct comparison to numerical simulations. Numerical simulations further show that the dark $J(V)$ can be used to determine the open circuit potential $V_{\rm oc}$ of an illuminated junction for a given short-circuit current density $J_{\rm sc}$ . A precise relation between the grain boundary properties and $V_{\rm oc}$ is provided, advancing the understanding of the influence of grain boundaries on the efficiency of thin film polycrystalline photovoltaics like CdTe and $\mathrm{Cu(In,Ga)Se_2}$.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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