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arXiv 1901.09563quant-phcond-mat.mes-hall
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半导体量子点中电空穴自旋操纵的简单模型:量子点材料和取向的影响

Simple model for electrical hole spin manipulation in semiconductor quantum dots: Impact of dot material and orientation

Benjamin Venitucci, Yann-Michel Niquet

摘要:

我们分析了一个典型的粒子在一个盒子模型的空穴自旋量子比特。该量子点受到静磁场和电场以及射频电场的作用,射频电场由于自旋轨道耦合而驱动拉比振荡。我们推导了拉比频率的方程,在这种情况下,拉比振荡主要是由量子比特态和附近单个激发态之间的耦合引起的。这一制度已被证明占主导地位,例如,薄绝缘体上硅纳米线中空穴自旋量子比特拉比频率的方程突出了控制拉比振荡的参数。特别是,我们表明,(001)衬底上的[110]取向的点比[001]取向的点表现得更好,因为它们最好地利用了主体材料的价带的各向异性。我们还得出结论,硅提供了最好的机会,快速拉比振荡在这个制度,尽管小的自旋轨道耦合。

英文摘要:

We analyze a prototypical particle-in-a-box model for a hole spin qubit. This quantum dot is subjected to static magnetic and electric fields, and to a radio-frequency electric field that drives Rabi oscillations owing to spin-orbit coupling. We derive the equations for the Rabi frequency in a regime where the Rabi oscillations mostly result from the coupling between the qubit states and a single nearby excited state. This regime has been shown to prevail in, e.g., hole spin qubits in thin silicon-on-insulator nanowires. The equations for the Rabi frequency highlight the parameters that control the Rabi oscillations. We show, in particular, that [110]-oriented dots on (001) substrates perform much better than [001]-oriented dots because they take best advantage of the anisotropy of the valence band of the host material. We also conclude that silicon provides the best opportunities for fast Rabi oscillations in this regime despite small spin-orbit coupling.

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