arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1806.04375cond-mat.mtrl-sci
收藏

Si(110)“16 × 2”重构的畴形成机制

Domain formation mechanism of the Si(110)"16 x 2" reconstruction

N. K. Lewis, N. B. Clayburn, E. Brunkow, T. J. Gay, Y. Lassailly, J. Fujii, I. Vobornik, W. R. Flavell, E. A. Seddon

摘要:

研究了Si(110)“16 × 2”表面重构时决定哪一个畴形成的主要因素。LEED和STM图像显示,畴取向与用于诱导Si(110)“16 x 2”重构的加热电流方向无关。倒易空间晶格模型的重建允许正确识别的LEED图像中的域方向,并确认重建是2D手性。提出了表面重构时的畴取向由Si(110)面上存在的单原子台阶的方向决定。这又由离轴抛光表面的方向决定,该方向与(110)平面偏离。

英文摘要:

The main factor that determines which of the two domains form upon reconstruction of the Si(110)"16 x 2" surface has been investigated. LEED and STM images showed that the domain orientation was independent of the heating current direction used to induce the Si(110)"16 x 2" reconstruction. Reciprocal-space lattice models of the reconstruction allowed for the correct identification of the domain orientations in the LEED images and confirm that the reconstruction is 2D-chiral. It is proposed that the domain orientation upon surface reconstruction is determined by the direction of monoatomic steps present on the Si(110) plane. This is in turn determined by the direction at which the surface is polished off-axis from the (110) plane.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑