While it is well established that elevated temperatures can induce surface roughening of metal surfaces, the effect of a high electric field on the atomic structure at ambient temperature has not been investigated in detail. Here we show with atomic resolution using in situ transmission electron microscopy how intense electric fields induce reversible switching between perfect crystalline and disordered phases of gold surfaces at room temperature. Ab initio molecular dynamics simulations reveal that the mechanism behind the structural change can be attributed to a vanishing energy cost in forming surface defects in high electric fields. Our results demonstrate how surface processes can be directly controlled at the atomic scale by an externally applied electric field, which promotes an effective decoupling of the topmost surface layers from the underlying bulk. This opens up opportunities for development of active nanodevices in e.g. nanophotonics and field-effect transistor technology as well as fundamental research in materials characterization and of yet unexplored dynamically-controlled low-dimensional phases of matter.
Electrically stimulated switching of a charge injection barrier at the interface between an organic semiconductor and an electrode modified with a disordered monolayer (DM) is studied by using various benzenethiol derivatives as DM molecules. The switching behavior is induced by a structural change in the DM molecules, and is manifested as a reversible inversion of the polarity of DM-modified Au electrode/rubrene/DM-modified Au electrode diodes. The switching direction is found to be dominantly determined by the push-back effect of the thiol bonding group, while the terminal group modulates th…
Typical ferroelectrics possess a large spontaneous polarization Ps but simultaneously a large remnant polarization Pr as well, resulting in an inferior energy storage density.A mechanism that can reduce the Pr while maintain the Ps is demanded to enhance the energy storage property of ferroelectrics.In the present study, it is shown that after acceptor doping and aging treatment, the domain switching in ferroelectrics becomes reversible, giving rise to a pinched double hysteresis loop. The pinched loop with a large Ps and a small Pr thus results in an enhanced energy storage density. The physi…
Reversible straintronic switching of a nanomagnet's magnetization between two stable or metastable states promises ultra-energy-efficient non-volatile memory. Here, we report strain-induced magnetization switching in ~300 nm sized FeGa nanomagnets delineated on a piezoelectric PMN-PT substrate. Voltage of one polarity applied across the substrate generates compressive strain in a nanomagnet and switches its magnetization to one state, while voltage of the opposite polarity generates tensile strain and switches the magnetization back to the original state, resulting in "non-toggle" switching. T…
Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room temperature, FeRh displays an uncommon antiferromagnetic to ferromagnetic phase transition linked to a unit cell volume expansion. Thus, using the strain exerted by an adjacent piezoelectric layer, the relative amount of antiferromagnetic and ferromagnetic regions can be tuned by an electric field applied to the piezoelectric material. Indeed, large variations in the s…
Electric-field (E-field) control of magnetism enabled by multiferroics has the potential to revolutionize the landscape of present memory devices plagued with high energy dissipation. To date, this E-field controlled multiferroic scheme at room temperature has only been demonstrated using BiFeO3 (BFO) films grown on DyScO3 (refs 1 and 2), a unique and expensive substrate, which gives rise to a particular ferroelectric domain pattern in BFO. Here, we demonstrate reversible E-field-induced switching of the magnetic state of the Co layer in Co/BFO (001) thin film heterostructures fabricated on Sr…
Colossal reversible conductivity switching by room-temperature oxygen-vacancy ordering in Aurivillius oxide films
Tsientang Institute for Advanced Study, Zhejiang（浙江大学先进技术研究总院）；Institute of Plasma Physics, HFIPS, Chinese Academy of Sciences, Hefei（中国科学院合肥物质科学研究院等离子体物理研究所）；Department of Physics and Materials, The Hong Kong Polytechnic University, Hong Kong（香港理工大学物理与材料系）；Songshan Lake Materials Laboratory, Dongguan, Guangdong（松山湖材料实验室）；Institute of Physics, Chinese Academy of Sciences, Beijing（中国科学院物理研究所）
Transition-metal-oxide based resistance random access memory is a promising candidate for next-generation universal non-volatile memories. Searching and designing appropriate new materials used in the memories becomes an urgent task. Here, a new structure with the TaO2 formula was predicted using evolutionary algorithms in combination with first-principles calculations. This new structure having a triclinic symmetry (T-TaO2) is both energetically and dynamically more favorable than the commonly believed rutile structure (R-TaO2). Our hybrid functional calculations show that T-TaO2 is a semicon…
Unconventional ferroelectricity, robust at reduced nanoscale sizes, exhibited by hafnia-based thin-films presents tremendous opportunities in nanoelectronics. However, the exact nature of polarization switching remains controversial. Here, we investigate epitaxial Hf0.5Zr0.5O2 (HZO) capacitors, interfaced with oxygen conducting metals (La0.67Sr0.33MnO3, LSMO) as electrodes, using atomic resolution electron microscopy while in situ electrical biasing. By direct oxygen imaging, we observe reversible oxygen vacancy migration from the bottom to the top electrode through HZO and reveal associated r…
Hysteretic magnetic pinning and reversible resistance switching in High-Tc superconductor/ferromagnet multilayers
我们研究了一个高TC超导（YBa 2Cu 3 O 7-d）/铁磁（Co/Pt多层）的混合体，它表现出由磁历史驱动的电阻开关：取决于外部磁场的方向，观察到的混合态电阻的显着减少或增加作为磁化反转发生在Co/Pt多层。我们证明，杂散磁场通过i）创建的涡旋/反涡旋和ii）由外部磁场引起的涡旋的静磁钉扎引起这些效应。
Ferroelectric domain switching in c-axis-oriented epitaxial Pb(Zr$_{0.2}$Ti$_{0.8}$)O$_3$ thin films was studied using biased scanning probe microscopy tips. While linear and logarithmic dependence of domain size on tip bias and writing time, respectively, are well known, we report an additional linear dependence on relative humidity in the 28-65% range. We map out the switched domain size as a function of both the tip bias and the applied pulse time and describe a growth-limited regime for very short pulses and a nucleation-limited regime for very low tip bias. Using "interrupted-switching" m…
Materials exhibiting reversible resistive switching in electrical fields are highly demanded for functional elements in oxide electronics. In particular, multilevel switching effects allow for advanced applications like neuromorphic circuits. Here we report on a structurally driven switching mechanism involving the so-called `dead layers' of perovskite manganite surfaces. Forming a tunnel barrier whose thickness can be changed in monolayer steps by electrical fields, the switching effect exhibits well-defined and robust resistive states.
The Dzyaloshinskii-Moriya interaction (DMI) has drawn great attention as it stabilizes magnetic chirality, with important implications in fundamental and applied research. This antisymmetric exchange interaction is induced by the broken inversion symmetry at interfaces or in non-centrosymmetric lattices. Significant interfacial DMI was found often at magnetic / heavy-metal interfaces with large spin-orbit coupling. Recent studies have shown promise of induced DMI at interfaces involving light elements such as carbon (graphene) or oxygen. Here we report direct observation of induced DMI by chem…
Layered iridates have been the subject of intense scrutiny on account of their unusually strong spin-orbit coupling, which opens up a narrow gap in a material that would otherwise be a metal. This insulating state is very sensitive to external perturbations. Here, we show that vertical compression at the nanoscale, delivered using the tip of a standard scanning probe microscope, is capable of inducing a five orders of magnitude change in the room temperature resistivity of Sr2IrO4. The extreme sensitivity of the electronic structure to anisotropic deformations opens up a new angle of interest …
In this contribution, we investigate the fundamental mechanism of plasticity in a model two-dimensional network glass. The glass is generated by using a Monte Carlo bond-switching algorithm and subjected to athermal simple shear deformation, followed by subsequent unloading at selected deformation states. This enables us to investigate the topological origin of reversible and irreversible atomic-scale rearrangements. It is shown that some events that are triggered during loading recover during unloading, while some do not. Thus, two kinds of elementary plastic events are observed, which can be…
Tuning the lattice degree of freedom in nanoscale functional crystals is critical to exploit the emerging functionalities such as piezoelectricity, shape-memory effect, or piezomagnetism, which are attributed to the intrinsic lattice-polar or lattice-spin coupling. Here it is reported that a mechanical probe can be a dynamic tool to switch the ferroic orders at the nanoscale multiferroic phase boundaries in BiFeO 3 with a phase mixture, where the material can be reversibly transformed between the "soft" tetragonal-like and the "hard" rhombohedrallike structures. The microscopic origin of the n…
Tip-Based Proximity Ferroelectric Switching and Piezoelectric Response in Wurtzite Multilayers
Frantsevich Institute for Problems in Materials Science, National Academy of Sciences of Ukraine（乌克兰国家科学院弗拉特谢维奇材料科学问题研究所）；Institute of Physics, National Academy of Sciences of Ukraine（乌克兰国家科学院物理研究所）；Department of Materials Science and Engineering, University of Tennessee（田纳西大学材料科学与工程系）；Department of Materials Science and Engineering, Pennsylvania State University（宾夕法尼亚州立大学材料科学与工程系）
The effects of current induced Néel spin-orbit torques on the antiferromagnetic domain structure of epitaxial Mn$_2$Au thin films were investigated by X-ray magnetic linear dichroism - photoemission electron microscopy (XMLD-PEEM). We observed current induced switching of AFM domains essentially corresponding to morphological features of the samples. Reversible as well as irreversible Néel vector reorientation was obtained in different parts of the samples and the switching of up to 30 % of all domains in the field of view of 10 $μ$m is demonstrated. Our direct microscopical observations are c…
An electro-thermal computational study of conducting channels in dielectric thin films using self-consistent phase-field methodology: A view toward the physical origins of resistive switching
The quantum mechanical screening of a spin via conduction electrons depends sensitively on the environment seen by the magnetic impurity. A high degree of responsiveness can be obtained with metal complexes, as the embedding of a metal ion into an organic molecule prevents intercalation or alloying and allows for a good control by an appropriate choice of the ligands. There are therefore hopes to reach an "on demand" control of the spin state of single molecules adsorbed on substrates. Hitherto one route was to rely on "switchable" molecules with intrinsic bistabilities triggered by external s…
Intrinsic magnetic topological insulators from MnBi2Te4 family promise realization of axion insulator, a theoretically predicted state of matter capable to mutually convert electric and magnetic signals, and whose properties are reminiscent of cosmological axion dark matter. Here we report the first experimental realization of room-temperature axionic single-spin switch in topological metamaterial MnBi2Te3. The metamaterial was in situ created in the scanning tunneling microscopy (STM) experiment by removing Te atomic layer from MnBi2Te4 surface using STM tip. Room temperature STM study of MnB…
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition metal dichalcogenide films provide an opportunity to combine the potential of semiconducting ferroelectrics with the design flexibility of two-dimensional material devices. Here, local control of ferroelectric domains in a marginally twisted WS2 bilayer is demonstrated with a scanning tunneling microscope at room temperature, and their observed reversible e…
Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag$_4$In$_3$Sb$_{67}$Te$_{26}$. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place wit…
Chirality is essential for various amazing phenomena in life and matter. However,chirality and its switching in electronic superlattices, such as charge density wave(CDW) arrays, remain elusive. In this study, we characterize the chirality transition with atom-resolution imaging in a single-layer NbSe2 CDW pattern by technique of scanning tunneling microscopy. The atomic lattice of the CDW array is found continuous and intact although its chirality is switched. Several intermediate states are tracked by time-resolved imaging, revealing the fast and dynamic chirality transition. Importantly, th…
Graphene is of interest in the development of next-generation electronics due to its high electron mobility, flexibility and stability. However, graphene transistors have poor on/off current ratios because of the absence of a bandgap. One approach to introduce an energy gap is to use hydrogenation reaction, which changes graphene into insulating graphane with sp3 bonding. Here we show that an electric field can be used to control conductor-to-insulator transitions in microscale graphene via a reversible electrochemical hydrogenation in an organic liquid electrolyte containing dissociative hydr…
