Ag2S电导开关中的体核和表面成核过程
Bulk and Surface Nucleation Processes in Ag2S Conductance Switches
摘要：
我们研究了金属Ag的形成内部和表面的Ag 2 S薄膜，诱导的电场与STM针尖。观察到两个明显的区域：在低偏压下表面上的团簇形成，和在较高偏压（V > 70 mV）下的全电导切换。观察到这种转变的偏置电压与室温下电导切换的已知阈值电压一致。我们提出了一个低偏压下团簇形成的模型。所提出的模型的测量数据的缩放表明，该过程发生在稳态附近，但取决于STM针尖的几何形状。通过尖端缩回测量和形貌扫描证实了簇的生长。这项研究提供了更好的理解的物理机制，驱动固体电解质忆阻器件的电导切换。
英文摘要：
We studied metallic Ag formation inside and on the surface of Ag2S thin films, induced by the electric field created with a STM tip. Two clear regimes were observed: cluster formation on the surface at low bias voltages, and full conductance switching at higher bias voltages (V > 70mV). The bias voltage at which this transition is observed is in agreement with the known threshold voltage for conductance switching at room temperature. We propose a model for the cluster formation at low bias voltage. Scaling of the measured data with the proposed model indicates that the process takes place near steady state, but depends on the STM tip geometry. The growth of the clusters is confirmed by tip retraction measurements and topography scans. This study provides improved understanding of the physical mechanisms that drive conductance switching in solid electrolyte memristive devices.
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