It was observed in recent experiments that the current-voltage characteristics (IV) of BPDN-DT (bipyridyl- dinitro- oligophenylene- ethynylene- dithiol) can be switched in a very controlled manner between "on" and "off" traces by applying a pulse in a bias voltage, V_bias. We have calculated the polaron formation energies to check a frequently held belief, namely, that the polaron formation can explain the observed bistability. Our results are not consistent with such a mechanism. Instead, we propose a conformational reorientation. The molecule carries an intrinsic dipole moment which couples to V_bias. Ramping V_bias exerts a force on the dipole that can reorient ("rotate") the molecule from the ground state ("off") into a metastable configuration ("on") and back. By elaborated electronic structure calculations, we identify a specific path for this rotation through the molecule's conformational phase space. We show that this path has sufficiently high barriers to inhibit thermal instability but still the molecule can be switched in the voltage range of the junction stability. The theoretical IVs reproduce qualitatively the key experimental observations. We propose, how the alternative mechanism of conductance switching can be experimentally verified.
Interplay of voltage control of magnetic anisotropy, spin transfer torque, and heat in the spin-orbit torque switching in three-terminal magnetic tunnel junctions
Hybrid straintronics and voltage-controlled-magnetic-anisotropy: Precessional switching of a perpendicular anisotropy magneto-tunneling junction without a magnetic field
Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field
Voltage Controlled Magnetic Anisotropy Based Low Energy Switching of a Ferromagnet on a Topological Insulator
我们提出了一种新的存储器件，它包括一个薄的铁磁层的Fe沉积在拓扑绝缘体薄膜，Bi 2 Se 3。铁磁层具有垂直各向异性，这是由于MgO沉积在Fe的顶面上。当电流在Bi2Se3的表面上通过时，Bi2Se3的表面变为自旋极化，并且在铁磁体中的d电子与在Bi2Se3的表面上传导电流的电子之间发生强交换相互作用。部分电流通过铁磁体分流，这在铁磁体中产生自旋转移力矩。自旋转移力矩和交换相互作用力矩与压控磁各向异性（VCMA）的组合允许铁磁体的超低能量切换。我们进行微磁模拟和预测的顺序为2.5 ns的开关时间和开关能量的顺序为0.45fJ的铁磁位与43kBT的热稳定性。拓扑绝缘体上的垂直各向异性铁磁体的这种超低能量和高速VCM诱导的切换可以用于能量高效的存储器设计。
Surface plasmon polaritons on soft-boundary graphene nanoribbons and their application as voltage controlled plasmonic switches and frequency demultiplexers
