利用面内退磁场和电压诱导的负垂直各向异性场大幅降低电压控制磁阻随机存取存储器的写入错误率
Substantial reduction of write-error rate for voltage-controlled magnetoresistive random access memory by in-plane demagnetizing field and voltage-induced negative out-of-plane anisotropy field
AI总结：
本文提出利用面内退磁场和电压诱导的负垂直各向异性场来优化VC-MRAM写入方案，通过改变切换动力学、增大IDF力矩并降低末态能量差，将写入错误率降低一个数量级。
摘要：
基于磁隧道结（MTJs）中电压诱导动态切换的电压控制磁阻随机存取存储器（VC-MRAM）是一种具有超低功耗前景的终极非易失性存储器。然而，传统磁隧道结中的动态切换伴随着相对较高的写入错误率（WER），阻碍了VC-MRAM的可靠运行。在此，我们提出了一种利用面内退磁场（IDF）和电压诱导的负垂直各向异性场（NOAF）的可靠写入方案。基于宏自旋模型的数值模拟表明，电压诱导的NOAF改变了切换动力学并增大了由IDF产生的力矩，从而缩短了切换时间。IDF和电压诱导的NOAF还降低了脉冲结束时磁化方向与平衡方向之间的平均能量差。结果表明，与传统磁隧道结中的动态切换相比，IDF和电压诱导的NOAF的适当组合可将WER降低一个数量级。
英文摘要：
Voltage-controlled magnetoresistive random access memory (VC-MRAM) based on voltage-induced dynamic switching in magnetic tunnel junctions (MTJs) is a promising ultimate non-volatile memory with ultralow power consumption. However, the dynamic switching in a conventional MTJ is accompanied by a relatively high write error rate (WER), hindering the reliable operation of VC-MRAM. Here, we propose a reliable writing scheme using the in-plane demagnetizing field (IDF) and voltage-induced negative out-of-plane anisotropy field (NOAF). Numerical simulations based on macrospin model demonstrate that the voltage-induced NOAF modifies the switching dynamics and increases the torque due to the IDF, thereby reducing the switching time. The IDF and voltage-induced NOAF also reduce the mean energy difference between the magnetization direction at the end of the pulse and the equilibrium direction. As a result, an appropriate combination of the IDF and voltage-induced NOAF reduces the WER by one order of magnitude compared with that of the dynamic switching in a conventional MTJ.
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