空气中硅化自形成亚10 nm纳米间隙电阻开关
Self-Formation of Sub-10-nm Nanogaps by Silicidation for Resistive Switch in Air
摘要：
我们开发了一种简单可靠的方法来制造亚10纳米宽的纳米间隙。自形成的纳米间隙是基于硅化过程中金属和Si原子之间的化学计量固态反应。纳米间隙宽度由金属层厚度决定。我们提出的方法产生纳米间隙对称或非对称电极，以及在一个独特的工艺步骤中应用于复杂电路的多个纳米间隙。因此，该方法提供了高通量并且适合于大规模生产。为了证明所提出的制造方法的可行性，纳米间隙电阻开关已经建立和表征。它们表现出明显的滞后现象，在空气中的开/关电导比高达103。我们的研究结果表明，初始电铸器件的开关状态的电压是由纳米间隙的大小。然而，器件的置位和复位电压并不强烈地依赖于纳米间隙宽度。这些现象有助于理解阻变是如何建立的。
英文摘要：
We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and Si atoms during silicidation process. The nanogap width is deter- mined by the metal layer thickness. Our proposed method produces nanogaps either symmetric or asymmetric electrodes, as well as, multiple nanogaps within one unique process step for application to complex circuits. Therefore, this method provides high throughput and it is suitable for large-scale production. To demonstrate the feasibil- ity of the proposed fabrication method, nanogap resistive switches have been built and characterized. They exhibit a pronounced hysteresis with up to 103 on/off conductance ratios in air. Our results indicate that the voltages for initially electroforming the de- vice to the switch state are determinated by the nanogap sizes. However, the set and reset voltages of the device do not strongly dependent on the nanogap widths. These phenomena could be helpful to understand how the resistive switching is established.
机构、总结、中文摘要均由AI分析而来，可能存在错误，请以论文正文为准。
