Intrinsic magnetic topological insulators from MnBi2Te4 family promise realization of axion insulator, a theoretically predicted state of matter capable to mutually convert electric and magnetic signals, and whose properties are reminiscent of cosmological axion dark matter. Here we report the first experimental realization of room-temperature axionic single-spin switch in topological metamaterial MnBi2Te3. The metamaterial was in situ created in the scanning tunneling microscopy (STM) experiment by removing Te atomic layer from MnBi2Te4 surface using STM tip. Room temperature STM study of MnBi2Te3 revealed atomic scale variations of exchange gap and formation of nanoscale spin bubbles pinned at subsurface defects. We found that individual spin states in MnBi2Te3 can be reversibly switched using local electric field of STM tip with magnetoelectric response comparable to the theoretically predicted response of axion insulator. The observed topological surface magnetism develops significantly above bulk Néel temperature.
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in ferrimagnetic or ferromagnetic multiferroics using electric field. Different from those studies based on static domain-level couplings, here the magnetoelectric coupling relies on the collaborative spin dynamics around domain walls. Accompanying the reversal of spin chirality driven by polarization switching, a "rolling-downhill"-like motion of domain wall is achieved a…
Although several multiferroic materials/heterostructures have been extensively studied, finding strong magnetoelectric couplings for the electric field control of the magnetization remains challenging. Here, a novel interfacial magnetoelectric coupling based on three components (ferroelectric dipole, magnetic moment, and antiferromagnetic order) is analytically formulated. As an extension of carrier-mediated magnetoelectricity, the new coupling is shown to induce an electric-magnetic hysteresis loop. Realizations employing BiFeO$_3$ bilayers grown along the [$111$] axis are proposed. Without i…
We report the results of direct measurement of remanent hysteresis loops on nanochains of BiFeO$_3$ at room temperature under zero and $\sim$20 kOe magnetic field. We noticed a suppression of remanent polarization by nearly $\sim$40\% under the magnetic field. The powder neutron diffraction data reveal significant ion displacements under a magnetic field which seems to be the origin of the suppression of polarization. The isolated nanoparticles, comprising the chains, exhibit evolution of ferroelectric domains under dc electric field and complete 180$^o$ switching in switching-spectroscopy pie…
Magnetoelectric coupling permits a magnetic order parameter to be addressed electrically or vice versa, and could find use in data storage, field sensors and actuators. Coupling constants for single phase materials such as chromium dioxide, boracites and manganites are typically as low as 10^{-12} - 10^{-9} s/m, e.g. because the polarisations and magnetisations are small. Two phase multiferroics with strain mediated coupling, such as laminates, composites and epitaxial nanostructures, are more promising because each phase may be independently optimised. The resulting magnetoelectric switching …
First-principles density functional calculations show that the $\textrm{SrRuO}_{3}/\textrm{PbTiO}_{3}/\textrm{SrRuO}_{3}$ multiferroic junction with asymmetric (RuO$_{2}$/PbO and TiO$_{2}$/SrO) interfaces has a large ferroelectric depolarizing field, whose switching changes the interface transmission probabilities for tunneling electrons, leading to electroresistance modulation over several orders of magnitude. The switching further affects the interface spin density, naturally driving magnetoresistance as well as modulated spin-dependent in-plane resistivity, which may be exploited in field-e…
Using first principles calculations, we study the microscopic origin of ferroelectricity (FE) induced by magnetic order in the orthorhombic HoMnO3. We obtain the largest ferroelectric polarization observed in the whole class of improper magnetic ferroelectrics to date. We find that the two proposed mechanisms for FE in multiferroics, lattice- and electronic-based, are simultaneously active in this compound: a large portion of the ferroelectric polarization arises due to quantum-mechanical effects of electron orbital polarization, in addition to the conventional polar atomic displacements. An i…
Electric-field control of magnetism without electric currents potentially revolutionizes spintronics towards ultralow power. Here by using mechanically coupled phase field simulations, we computationally demonstrate the application of the strain-mediated magnetoelectric effect for the electric-field control of magnetic states in heterostructure. In the model heterostructure constituted of the soft nanomagnet Co and the piezoelectric substrate PMN-PT, both the volatility of magnetic states and the magnetization switching dynamics excited by the electric field are explored. It is found that an e…
By employing resonant X-ray microdiffraction, we image the magnetisation and magnetic polarity domains of the Y-type hexaferrite Ba$_{0.5}$Sr$_{1.5}$Mg$_2$Fe$_{12}$O$_{22}$. We show that the magnetic polarity domain structure can be controlled by both magnetic and electric fields, and that full inversion of these domains can be achieved simply by reversal of an applied magnetic field in the absence of an electric field bias. Furthermore, we demonstrate that the diffraction intensity measured in different X-ray polarisation channels cannot be reproduced by the accepted model for the polar magne…
We show that low field magnetoelectric (ME) properties of helimagnets Ba0.5Sr1.5Zn2(Fe1-xAlx)12O22 can be efficiently tailored by Al-substitution level. As x increases, the critical magnetic field for switching electric polarization is systematically reduced from ~1 T down to ~1 mT, and the ME susceptibility is greatly enhanced to reach a giant value of 2.0 x 10^4 ps/m at an optimum x = 0.08. We find that control of nontrivial orbital moment in the octahedral Fe sites through the Al-substitution is crucial for fine tuning of magnetic anisotropy and obtaining the conspicuously improved ME chara…
As a room-temperature multiferroic, BiFeO3 has been intensively investigated for both magnetoelectric devices and non-volatile ferroelectric memory applications. Both magnetoelectric and ferroelectric memory devices have the same control knob: polarization switching by an applied electric field. Due to the rhombohedral symmetry of BiFeO3, there are four ferroelastic variances and three different polarization switching events: (1) 71° switching from r1- to r3+, (2) 109° switching from r1- to r2+ (or r4+), and (3) 180o switching from r1- to r1+ (the superscript + and - stand for up and down pola…
Magnetic, dielectric and calorimetric studies on 0.9BiFeO3-0.1BaTiO3 indicate strong magnetoelectric coupling. XRD studies reveal a very remarkable change in the rhombohedral distortion angle and a significant shift in the atomic positions at the magnetic Tc due to an isostructural phase transition. The calculated polarization using Rietveld refined atomic positions scales linearly with magnetization. Our results provide the first unambiguous evidence for magnetoelectric coupling of intrinsic multiferroic origin in a BiFeO3 based system.
The chirality-dependent magnetoelectric properties of Neel-type domain walls in iron garnet films is observed. The electrically driven magnetic domain wall motion changes the direction to the opposite with the reversal of electric polarity of the probe and with the chirality switching of the domain wall from clockwise to counterclockwise. This proves that the origin of the electric field induced micromagnetic structure transformation is inhomogeneous magnetoelectric interaction.
We have performed an exhaustive representation-theory-based search for the simplest structures allowing isotropic magnetoelectric coupling. We find 30 such structures, all sharing a common pattern of atomic displacements in the direction of atomic magnetic moments. We focus on one of these 30 canonical structures and find that it is generically realized in a class of fractionally substituted pyrochlore compounds with an all-in-all-out magnetic order. Furthermore, we find that these substituted pyrochlore compounds have a substantial Chern-Simons orbital magnetoelectric component (θ=0.1--0.2). …
We demonstrate room temperature ferroelectricity in the epitaxial thin films of magnetoelectric GaFeO3. Piezo-force measurements show a 180o phase shift of piezoresponse upon switching the electric field indicating nanoscale ferroelectricity in epitaxial thin films of gallium ferrite. Further, temperature dependent impedance analysis with and without the presence of an external magnetic field clearly reveals a pronounced magneto-dielectric effect across the magnetic transition temperature. In addition, our first principles calculations show that Fe ions are not only responsible for ferrimagnet…
Geometry-Driven Magnetoelectric Coupling in Two-Dimensional Compensated Ferrimagnets
School of Emerging Technology and Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China（中国科学技术大学新兴技术学院与微观物质科学国家研究中心）；State Key Laboratory of Precision and Intelligent Chemistry, School of Chemistry and Materials Science, and Collaborative Innovation Center of Chemistry for Energy Materials (iChEM), University of Science and Technology of China（中国科学技术大学精密与智能化学国家重点实验室、化学与材料科学学院及能源材料化学协同创新中心）；Hefei National Laboratory, University of Science and Technology of China（中国科学技术大学合肥国家实验室）
The Haldane spin-chain compound, Tb2BaNiO5, with two antiferromagnetic transitions, one at T1=63K, and the other at T2=25K, has been recently shown by us to be an exotic multiferroic below T2. Here, we report the results of our investigations of Sr doping at the Ba site by magnetization, heat-capacity, magnetoelectric (MDE), and pyrocurrent measurements. An intriguing finding, which we stress, is that the ferroelectricity is lost even for a doping level of 10 atomic percent, though magnetic ordering prevails. The doped specimens however retain significant magnetodielectric behaviour, but with …
By combining single crystal x-ray and neutron diffraction, and the magnetodielectric measurements on single crystal Fe4Nb2O9, we present the magnetic structure and the symmetry-allowed magnetoelectric coupling in Fe4Nb2O9. It undergoes an antiferromagnetic transition at TN=93 K, followed by a displacive transition at TS=70 K. The temperature-dependent dielectric constant of Fe4Nb2O9 is strongly anisotropic with the first anomaly at 93 K due to the exchange striction as a result of the long range spin order, and the second one at 70 K emanating from the structural phase transition primarily dri…
Over the years attempts have been made to compensate for the inherent weaknesses in the bulk state of the multiferroic BiFeO3, such as high leakage current and the absence of ferromagnetic correlation, and exploit its magnetoelectric potential by forming solid solutions with other perovskites. Studies in the recent few years have shown that alloying of BiFeO3 with BaTiO3, both with and without additives, can induce both ferroelectric and ferromagnetic switching. While the coexistence of both the ferroic orders is encouraging from the view point of technological applications, the origin of ferr…
We have developed a new magnetoelectric material based on Ga doped α-Fe2O3 in rhombohedral phase. The material is a canted ferromagnet at room temperature and showing magneto-electric properties. The experimental results of electric field controlled magnetic state provided a direct evidence of room temperature magnetoelectric coupling in Ga doped α-Fe2O3 system. Interestingly, (un-doped) α-Fe2O3 system does not exhibit any electric field controlled magnetic exchange bias shift, but Ga doped α-Fe2O3 system has shown an extremely high electric field induced magnetic exchange bias shift up to the…
Numerous authors have referred to room-temperature magnetic switching of large electric polarizations as The Holy Grail of magnetoelectricity.We report this long-sought effect using a new physical process of coupling between magnetic and ferroelectric relaxor nano-regions. Here we report magnetic switching between the normal ferroelectric state and the ferroelectric relaxor state. This gives both a new room-temperature, single-phase, multiferroic magnetoelectric, PbZr0.46Ti0.34Fe0.13W0.07O3, with polarization, loss (<4%), and resistivity (typically 108 -109 ohm.cm) equal to or superior to BiFe…
Cr$_2$O$_3$ is the archetypal magnetoelectric (ME) material, which has a linear coupling between electric and magnetic polarizations. Quadratic ME effects are forbidden for the magnetic point group of Cr$_2$O$_3$, due to space-time inversion symmetry. In Cr$_2$O$_3$ films grown by sputtering, we find a signature of a quadratic ME effect that is not found in bulk single crystals. We use Raman spectroscopy and magetization measurements to deduce the removal of space-time symmetry, and corroborate the emergence of the quadratic ME effect. We propose that meta-stable site-selective trace dopants r…
Polarization induced spin switching of atoms in magnetic materials opens for possibilities to design and develop advanced spintronic devices, in particular, storage devices where the magnetic state can be controlled by an electric field. We employ density-functional theory calculations to study the magnetic properties of a perovskite strontium cobalt oxyfluoride Sr$_2$CoO$_3$F (SCOF) in a hybrid perovskite heterostructure, where SCOF is sandwiched between two ferroelectic BaTiO$_3$ (BTO) layers. Our calculations show that the spin state of the central Co atom in SCOF can be controlled by alter…
Recent results in electric-field control of magnetism have paved the way for the design of alternative magnetic and spintronic devices with enhanced functionalities and low power consumption. Among the diversity of reported magnetoelectric effects, the possibility of switching on and off long-range ferromagnetic ordering close to room temperature stands out. Its binary character opens up the avenue for its implementation in magnetoelectric data storage devices. Here we show the possibility to locally switch on superferromagnetism in a wedge-shaped polycrystalline Fe thin film deposited on top …
The control of the electron spin by external means is a key issue for spintronic devices. Using spin- and angle-resolved photoemission spectroscopy (SARPES) with three-dimensional spin detection, we demonstrate operando electrostatic spin manipulation in ferroelectric GeTe and multiferroic Ge1-xMnxTe. We not only demonstrate for the first time electrostatic spin manipulation in Rashba semiconductors due to ferroelectric polarization reversal, but are also able to follow the switching pathway in detail, and show a gain of the Rashba-splitting strength under external fields. In multiferroic Ge1-…
Magnetoelectric coupling between magnetic and electric dipoles is one of the cornerstones of modern physics towards developing the most energy-efficient magnetic data storage. Conventionally, magnetoelectric coupling is achieved in single-phase multiferroics or in magnetoelectric composite nanostructures consisting of ferromagnetic and ferroelectric/piezoelectric materials. Here, we demonstrate an electric-field-induced strain-mediated magnetoelectric effect in ultrathin CoFeB/MgO magnetic tunnel junction employing non-piezoelectric material, which is a vitally important structure for spintron…
Reversible control of magnetization by electric fields without assistance from a subsidiary magnetic field or electric current could help reduce the power consumption in spintronic devices. When increasing temperature above room temperature, FeRh displays an uncommon antiferromagnetic to ferromagnetic phase transition linked to a unit cell volume expansion. Thus, using the strain exerted by an adjacent piezoelectric layer, the relative amount of antiferromagnetic and ferromagnetic regions can be tuned by an electric field applied to the piezoelectric material. Indeed, large variations in the s…
We develop a microscopic magnetoelectric coupling in Ni$_3$V$_2$O$_8$ (NVO) which gives rise to the trilinear phenomenological coupling used previously to explain the phase transition in which magnetic and ferroelectric order parameters appear simultaneously. Using combined neutron scattering measurements and first-principles calculations of the phonons in NVO, we determine eleven phonons which can induce the observed spontaneous polarization. Among these eleven phonons, we find that a few of them can actually induce a significant dipole moment. Using the calculated atomic charges, we find tha…
The control of magnetization via the application of an electric field, known as magnetoelectric coupling, is among the most fascinating and active research areas today. In addition to fundamental scientific interest, magnetoelectric effects may lead to new device concepts for data storage and processing. There are several known mechanisms for magnetoelectric coupling that include intrinsic effects in single-phase materials, strain induced coupling in two-phase composites, and electronically-driven effects at interfaces. Here we explore a different type of magnetoelectric effect at a ferromagne…
Neutron spherical polarimetry, which is directly sensitive to the absolute magnetic configuration and domain population, has been used in this work to unambiguously prove the multiferroicity of (ND4)2[FeCl5(D2O)]. We demonstrate that the application of an electric field upon cooling results in the stabilization of a single-cycloidal magnetic domain below 6.9 K, while poling in the opposite electric field direction produces the full population of the domain with opposite magnetic chirality. We prove the complete switchability of the magnetic domains at low temperature by the applied electric fi…
Hexagonal YMnO_3 with space group P63cm is one of the rare examples of multiferroic materials that exhibit co-dependence of a robust ferroelectric phase along with antiferromagnetic ordering. This is primarily ascribed to tilting of the MnO_5 polyhedra driven by magnetoelectric coupling. We report on the effect of magnetic field at the atomic level in YMnO_3 by utilizing magnetic field and temperature dependent neutron diffraction measurements. We show that near the Néel temperature the lattice parameters, effective magnetic moment per site, Mn-O bond lengths and O-Mn-O bond angles show large …
Intrinsic magnetic topological insulator ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}$ is believed to be an axion insulator in its antiferromagnetic ground state. However, direct identification of axion insulators remains experimentally elusive because the observed vanishing Hall resistance, while indicating the onset of the axion field, is inadequate to distinguish the system from a trivial normal insulator. Using numerical Green's functions, we theoretically demonstrate the quantized magnetoelectric current in a tunnel junction of atomically thin ${\mathrm{MnBi}}_{2}{\mathrm{Te}}_{4}$ sandwiched be…
General energy approaches have been applied to study the single-domain polarization reversal induced by the voltage-modulated Atomic Force Microscopy (AFM) in ferroelectric single crystals and thin films. Topographic analysis of energy surfaces in the subspace of domain dimensions is performed, and energy evolutions under an external bias are elucidated. This has let to successfully describe all stages of the AFM switching, including formations of a reversed domain, its growth in a bulk, domain contact instabilities near an electrode, and pure sidewise expansions in a film.
We have determined the terahertz spectrum of the chiral langasite Ba$_3$NbFe$_3$Si$_2$O$_{14}$ by means of synchrotron-radiation measurements. Two excitations are revealed that are shown to have a different nature. The first one, purely magnetic, is observed at low temperature in the magnetically ordered phase and is assigned to a magnon. The second one persits far into the paramagnetic phase and exhibits both an electric and a magnetic activity at slightly different energies. This magnetoelectric excitation is interpreted in terms of atomic rotations and requires a helical electric polarizati…
Antiferromagnets (AFMs) are presently considered as promising materials for applications in spintronics and random access memories due to the robustness of information stored in AFM state against perturbing magnetic fields (P. Wadley et al., Science 351, 587 (2016)). In this respect, AFM multiferroics maybe attractive alternatives for conventional AFMs as the coupling of magnetism with ferroelectricity (magnetoelectric effect) offers an elegant possibility of electric field control and switching of AFM domains. Here we report the results of comprehensive experimental and theoretical investigat…
Logical devices based on spin waves offer the potential to avoid dissipation mechanisms that limit devices based on either the charge or spin of mobile electrons. Multiferroic magnetoelectrics, which are materials that combine ferroelectric and magnetic order, allow direct switching of magnetic order and thence of spin-wave properties using an applied electric field. The intrinsic coupling between polarization and magnetic moments, generated by strong electronic correlations in these multiferroic materials, is argued to provide new approaches to spin-wave injection and spin-wave switching usin…
A general formula for the average vector potential of bulk periodic systems is proposed and shown to set the boundary conditions at magnetic interfaces. For antiferromagnetic materials, the study reveals a unique relation between the macroscopic potential and the orientation-dependent magnetic quadrupole, as a result of the different crystalline and magnetic symmetries. In particular, at surfaces and interfaces of a truncated bulk without inversion and time-reversal symmetries, the average vector potential exhibits a discontinuity, which results in an interfacial magnetic field. In general, ho…
Magnetoelectric (ME) materials are of fundamental interest and have been investigated for their broad potential for technological applications. The search for, and eventually the theoretical design of, materials with large ME couplings present challenging issues. First-principles methods have only recently been developed to calculate the full ME response tensor $α$ including both electronic and ionic (i.e., lattice-mediated) contributions. The latter is proportional to both the Born dynamical electric charge $Z^{\rm e}$ and its analogue, the dynamical magnetic charge $Z^{\rm m}$. Here we prese…
Ferroelectric switching at edge dislocations in BaTiO$_3$ modelled at the atomic scale
Interdisciplinary Centre for Advanced Materials Simulation (ICAMS), Ruhr-University Bochum（波鸿鲁尔大学先进材料模拟跨学科中心）；Center for Interface-Dominated High Performance Materials (ZGH), Ruhr-University Bochum（波鸿鲁尔大学界面主导高性能材料中心）；Faculty of Physics and Astronomy, Ruhr-University Bochum（波鸿鲁尔大学物理与天文学系）；Univ. Lille, CNRS, INRAE, Centrale Lille, UMR 8207 - UMET - Unité Matériaux et Transformations（里尔大学、法国国家科学研究中心、法国国家农业食品与环境研究院、里尔中央理工学院、UMR 8207 材料与转化单元）
The theoretical description of the nanostructured Pb(Fe1/2Ta1/2)x(Zr1/2Ti1/2)1-xO3 (PFTx-PZT(1-x)) and Pb(Fe1/2Nb1/2)x(Zr1/2Ti1/2)1-xO3 (PFNx-PZT(1-x)) intriguing ferromagnetic, ferroelectric and magnetoelectric properties at temperatures higher than 100 K are absent to date. The goal of this work is to propose the theoretical description of the physical nature and the mechanisms of the aforementioned properties, including room temperature ferromagnetism, phase diagram dependence on the composition x with a special attention to the multiferroic properties at room temperature, including anomalo…
Roughness-insensitive and electrically controllable magnetization at the (0001) surface of antiferromagnetic chromia is observed using magnetometry and spin-resolved photoemission measurements and explained by the interplay of surface termination and magnetic ordering. Further, this surface in placed in proximity with a ferromagnetic Co/Pd multilayer film. Exchange coupling across the interface between chromia and Co/Pd induces an electrically controllable exchange bias in the Co/Pd film, which enables a reversible isothermal (at room temperature) shift of the global magnetic hysteresis loop o…
