We demonstrate a non-volatile magnetoelectric magnonic memory (MEMM) that enables fully electrical write/read via direct magnon-driven sensing in an insulating antiferromagnet. A fabricated SrIrO3/La-BiFeO3/SrIrO3 trilayer exhibits sub-100 ps switching, a remnant polarization of 20 uC/cm2, and a readout voltage contrast close to 1mV between high and low-resistance states. To connect device physics to circuit behavior, we develop and experimentally validate a compact circuit model that captures spin Hall injection and spin transport. Simulations with optimized material parameters predict output voltages > 100mV, enabling cascading without external amplification. Using this framework, we design MEMM-based memory and logic blocks, including a 1T1R array, two inverter implementations (complementary two-device and single-device), and a three-input majority gate, and evaluate deep-pipelined operation. The model projects switching energies down to 1 aJ per operation and logic propagation delays of 30-60 ps, indicating MEMM as a promising platform for energy-constrained, high throughput computing.
Spin excitations of magnetoelectric LiNiPO$_4$ are studied by infrared absorption spectroscopy in the THz spectral range as a function of magnetic field through various commensurate and incommensurate magnetically ordered phases up to 33\,T. Six spin resonances and a strong two-magnon continuum are observed in zero magnetic field. Our systematic polarization study reveals that some of the excitations are usual magnetic-dipole active magnon modes, while others are either electromagnons, electric-dipole active, or magnetoelectric, both electric- and magnetic-dipole active spin excitations. Field…
We consider theoretically the effect of an inhomogeneous magnetoelectric coupling on the magnon-induced dynamics of a ferromagnet. The magnon-mediated magnetoelectric torque affects both the homogeneous magnetization and magnon-driven domain wall motion. In the domains, we predict a reorientation of the magnetization, controllable by the applied electric field, which is almost an order of magnitude larger than that observed in other physical systems via the same mechanism. The applied electric field can also be used to tune the domain wall speed and direction of motion in a linear fashion, pro…
Magnetoelectric materials have generated wide technological and scientific interest because of the rich phenomena these materials exhibit, including the coexistence of magnetic and ferroelectric orders, magnetodielectric behavior, and exotic hybrid excitations such as electromagnons. The multiferroic spinel material, CoCr$_2$O$_4$, is a particularly interesting example of a multiferroic material, because evidence for magnetoelectric behavior in the ferrimagnetic phase seems to conflict with traditional noncollinear-spin-driven mechanisms for inducing a macroscopic polarization. This paper repo…
To face the challenges lying beyond current CMOS-based technology, new paradigms for information processing are required. Magnonics proposes to use spin waves to carry and process information, in analogy with photonics that relies on light waves, with several advantageous features such as potential operation in the THz range and excellent coupling to spintronics. Several magnonic analog and digital logic devices have been proposed, and some demonstrated. Just as for spintronics, a key issue for magnonics is the large power required to control/write information (conventionally achieved through …
Spin transport through magnetic insulators has been demonstrated in a variety of materials and is an emerging pathway for next-generation spin-based computing. To modulate spin transport in these systems, one typically applies a sufficiently strong magnetic field to allow for deterministic control of magnetic order. Here, we make use of the well-known multiferroic magnetoelectric, BiFeO3, to demonstrate non-volatile, hysteretic, electric-field control of thermally excited magnon current in the absence of an applied magnetic field. These findings are an important step toward magnon-based device…
The possibility to control the magnetic properties of a material with an electric field at room temperature is highly desirable for modern applications. Moreover, a coupling between magnetic and electric orders within a single material presenting a wide range of exceptional physical properties, such as bismuth iron garnet (BIG), may lead to great advances in the field of spintronic applications. In particular, the combination of the magnetoelectric (ME) coupling with the low damping of spin waves in BIG can allow the control and manipulation of spin waves by an electric field in magnonic devic…
Our measured dielectric constant and mechanical response of multiferroic BiFeO3 indicate four phase transitions below room temperature. Features correlate with those reported at 50K (from a peak in the zero-field-cooled magnetic susceptibility) and 230K (from splitting between field-cooled and zero-field-cooled magnetic data[1], and 200K (from magnon light scattering cross sections[2]). The primary order parameter is not the polarization in any of the low-T transitions. Instead, the transition near 230 K shows strong elastic coupling, while that at 50K is fundamentally magnetic, but magnetostr…
Voltage-controlled spintronic devices utilizing the spin degree of freedom are desirable for future applications, and may allow energy-efficient information processing. Pure spin current can be created by thermal excitations in magnetic systems via the spin Seebeck effect (SSE). However, controlling such spin currents, only by electrical means, has been a fundamental challenge. Here, we investigate voltage control of the SSE in the antiferromagnetic insulator Cr2O3. We demonstrate that the SSE response generated in this material can be effectively controlled by applying a bias voltage, owing t…
A magnon Nernst effect, an antiferromagnetic analogue of the magnon Hall effect in ferromagnetic insulators, has been studied experimentally for a layered antiferromagnetic insulator MnPS3 in contact with two Pt strips. Thermoelectric voltage in the Pt strips grown on MnPS3 single crystals exhibits non-monotonic temperature dependence at low temperatures, which cannot be explained by electronic origins in Pt but can be ascribed to the inverse spin Hall voltage induced by a magnon Nernst effect. Control of antiferromagnetic domains in the MnPS3 crystal by magnetoelectric cooling is found to mod…
Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr$_2$O$_3$ is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr$_2$O$_3$ the maximal mobility of 0.1 m/(s$\times$Oe) is reached at $E\approx0.06$ V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr$_2$O$_3$. These major drawbacks for devic…
Chirality discrimination is of a fundamental interest in biology, chemistry, and metamaterial studies. In optics, near-field plasmon-resonance spectroscopy with superchiral probing fields is effectively applicable for analyses of large biomolecules with chiral properties. We show possibility for microwave near-field chirality discrimination analysis based on magnon-resonance spectroscopy. Newly developed capabilities in microwave sensing using magnetoelectric (ME) probing fields originated from multiresonance magnetic-dipolar-mode (MDM) oscillations in quasi-2D yttrium-iron-garnet (YIG) disks,…
Spin-waves (magnons) are among the prime candidates for building fast yet energy-efficient platforms for information transport and computing. We here demonstrate theoretically and in state-of-the-art micromagnetic simulation the effects that strategically-injected spin-polarized current can have on controlling magnonic transport. We reveal analytically that the Zhang-Li spin-transfer-torque induced by applied current is analogous to the Dzyaloshinskii-Moriya interaction for scattering the magnons in the linear regime, to then provide a generalized Snell's law that describes the spin-wave propa…
Information transport and processing by pure magnonic spin currents in insulators is a promising alternative to conventional charge-current driven spintronic devices. The absence of Joule heating as well as the reduced spin wave damping in insulating ferromagnets has been suggested to enable the implementation of efficient logic devices. After the proof of concept for a logic majority gate based on the superposition of spin waves has been successfully demonstrated, further components are required to perform complex logic operations. A key component is a switch that corresponds to a conventiona…
Various phenomena related to inhomogeneous magnetoelectric interaction are considered. The interrelation between spatial modulation of order parameter and electric polarization, known as flexoelectric effect in liquid crystals, in the case of magnetic media appears in a form of electric polarization induced by spin modulation and vice versa. This flexomagnetoelectric interaction is also related to the influence of ferroelectric domain structure on antiferromagnetic vector distribution, and to the magnetoelectric properties of micromagnetic structures. The influence of inhomogeneous magnetoelec…
We propose a concept of magnetic logic circuits engineering, which takes an advantage of magnetization as a computational state variable and exploits spin waves for information transmission. The circuits consist of magneto-electric cells connected via spin wave buses. We present the result of numerical modeling showing the magneto-electric cell switching as a function of the amplitude as well as the phase of the spin wave. The phase-dependent switching makes it possible to engineer logic gates by exploiting spin wave buses as passive logic elements providing a certain phase-shift to the propag…
We investigated the spin excitations of magnetoelectric $\text{LiFePO}_4$ by THz absorption spectroscopy in magnetic fields up to 33$\,$T. By studying their selection rules, we found not only magnetic-dipole, but also electric-dipole active (electromagnons) and magnetoelectric resonances. The magnetic field dependence of four strong low-energy modes is reproduced well by our four-sublattice spin model for fields applied along the three orthorhombic axes. From the fit, we refined the exchange couplings, single-ion anisotropies, and the Dzyaloshinskii-Moriya interaction parameters. Additional sp…
Realizing topological magnetism and its electric control are intensive topics in the spintronics due to their promising applications in information storage and logic technologies. Here we unveil that both can be achieved in the two-dimensional (2D) magnetoelectric multiferroics. Using first-principles calculations, we show that strong Dzyaloshinskii-Moriya interaction (DMI), which is the key ingredient for the formation of exotic chiral magnetism, could be induced in 2D multiferroics with vertical electric polarization via Rashba effect. We verify that such significant DMI can promote sub-10 n…
Huazhong University of Science and Technology（华中科技大学）；University of Vienna（维也纳大学）；V. G. Baryakhtar Institute of Magnetism of the NAS of Ukraine（乌克兰国家科学院V.G.巴里亚赫塔尔磁学研究所）；INNOVENT e.V.（INNOVENT协会）；Hubei University（湖北大学）；Wuhan National High Magnetic Field Center, Huazhong University of Science and Technology（华中科技大学武汉国家强磁场中心）；Rheinland-Pfälzische Technische Universität Kaiserslautern-Landau（凯泽斯劳滕-兰道莱茵兰-普法尔茨技术大学）
Controllable phase modulation plays a pivotal role in the researches of magnonic logic gates. Here we propose a reconfigurable spin-current controlled magnonic phase shifter based on a ferromagnetic resonator. The proposed phase shifter requires no magnetic bias field during operation. The device is directly configured over the waveguide while keeping the original structure of the waveguide unaffected. Numerical micromagnetic simulations show that the phase shifter could yield either a π-phase or no shift depending on the magnetization status of the resonator, which can be controlled by a curr…
The design of a microstructured, fully functional spin-wave majority gate is presented and studied using micromagnetic simulations. This all-magnon logic gate consists of three-input waveguides, a spin-wave combiner and an output waveguide. In order to ensure the functionality of the device, the output waveguide is designed to perform spin-wave mode selection. We demonstrate that the gate evaluates the majority of the input signals coded into the spin-wave phase. Moreover, the all-magnon data processing device is used to perform logic AND-, OR-, NAND- and NOR- operations.
A General Theory of Chiral Splitting of Magnons in Two-Dimensional Magnets
School of Materials Science and Physics, China University of Mining and Technology（中国矿业大学材料科学与工程学院）；Jiangsu Physical Science Research Center（江苏省物理科学研究中心）
Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in magnetostrictive/piezoelectric systems may pave the way toward ultra low-power electronics. Although the former effect has been demon-strated in several multiferroic heterostructures, the incorporation of such complex geometries into practical magnetic memory and logic nanodevices has been lacking. Here, we demonstrate the room temperature control of a domain wall gate with an elec…
Exploring new strategies to perform magnon logic is a key requirement for the further development of magnon-based spintronics. In this work, we realize a three-terminal magnon transport device to study the possibility of manipulating magnonic spin information transfer in a magnetic insulator via localized magnetic fields and heat generation. The device comprises two parallel Pt wires as well as a Cu center wire that are deposited on the ferrimagnetic insulator Y$_{3}$Fe$_{5}$O$_{12}$. While the Pt wires act as spin current injector and detector, the Cu wire is used to create local magnetostati…
Spatially-Localized Second Harmonic Generation via Spin Wave Concentration in Patterned YIG Structures
Martin-Luther-Universität Halle-Wittenberg（哈勒-维滕贝格马丁路德大学）；Interdisziplinäres Zentrum für Materialwissenschaften, Martin-Luther-Universität Halle-Wittenberg（哈勒-维滕贝格马丁路德大学跨学科材料科学中心）
Multiferroics have found renewed interest in topological magnetism and for logic-in-memory applications. Among them, SrMnO$_{3}$, possessing strong magnetoelectric coupling is gaining attention for the design of coexisting magnetic and polar orders upon straining. Here we demonstrate antiferromagnetic exchange interactions in strained SMO thin films extracted from a new feature in the phase response of Spin Hall magnetoresistance, which has not been explored in earlier works, such as in magnetic insulators. We explain our findings with a model that incorporates magnetic anisotropy along [110] …
We present spin transport studies on a low-field, room-temperature magnetoelectric multiferroic polycrystalline $\text{Sr}_{3}\text{Co}_{2}\text{Fe}_{24}\text{O}_{41}$ (SCFO)|Pt heterostructure wherein a highly tunable transverse conical magnetic phase is responsible for static and dynamic magnetoelectric coupling. We measured angular dependence of spin Hall magnetoresistance (SMR) at constant magnetic fields ($H$) in the range of 50 to 100 kOe. Application of field below the critical value (2.5 kOe), yielded negative SMR and the $H$-evolution of normalized SMR exhibited a negative gradient. F…
Numerous authors have referred to room-temperature magnetic switching of large electric polarizations as The Holy Grail of magnetoelectricity.We report this long-sought effect using a new physical process of coupling between magnetic and ferroelectric relaxor nano-regions. Here we report magnetic switching between the normal ferroelectric state and the ferroelectric relaxor state. This gives both a new room-temperature, single-phase, multiferroic magnetoelectric, PbZr0.46Ti0.34Fe0.13W0.07O3, with polarization, loss (<4%), and resistivity (typically 108 -109 ohm.cm) equal to or superior to BiFe…
Logical devices based on spin waves offer the potential to avoid dissipation mechanisms that limit devices based on either the charge or spin of mobile electrons. Multiferroic magnetoelectrics, which are materials that combine ferroelectric and magnetic order, allow direct switching of magnetic order and thence of spin-wave properties using an applied electric field. The intrinsic coupling between polarization and magnetic moments, generated by strong electronic correlations in these multiferroic materials, is argued to provide new approaches to spin-wave injection and spin-wave switching usin…
Magnetic tunnel junctions (MTJs) interconnected via a continuous ferromagnetic free layer were fabricated for Spin Torque Majority Gate (STMG) logic. The MTJs are biased independently and show magnetoelectric response under spin transfer torque. The electrical control of these devices paves the way to future spin logic devices based on domain wall (DW) motion. In particular, it is a significant step toward the realization of a majority gate, even though further downscaling may be required. To our knowledge, this is the first fabrication of a cross-shaped free layer shared by several perpendicu…
Ferroelectric switching of odd-parity magnon spin splitting
Tsinghua University（清华大学）；Cornell University（康奈尔大学）；Ningbo Institute of Digital Twin, Eastern Institute of Technology（宁波数字孪生研究院，东方理工学院）；Department of Physics, Tsinghua University（清华大学物理系）；Department of Physics, University of Science and Technology of China（中国科学技术大学物理系）；University at Buffalo, State University of New York（纽约州立大学布法罗分校）；Kavli Institute at Cornell for Nanoscale Science（康奈尔纳米科学卡弗里研究所）
A common scenario of magnetoelectric coupling in multiferroics is the electric polarization induced by spatially modulated spin structures. It is shown in this paper that the same mechanism works in magnetic dielectrics with inhomogeneous magnetization distribution: the domain walls and magnetic vortexes can be the sources of electric polarization. The electric field driven magnetic domain wall motion is observed in iron garnet films. The electric field induced nucleation of vortex state of magnetic nanodots is theoretically predicted and numerically simulated. From the practical point of view…
Spin-orbit torque is a promising mechanism for writing magnetic memories, while field-effect transistors are the gold-standard device for logic operation. The spin-orbit torque field effect transistor (SOTFET) is a proposed device that couples a spin-orbit-torque-controlled ferromagnet to a semiconducting transistor channel via the transduction in a magnetoelectric multiferroic. This allows the SOTFET to operate as both a memory and a logic device, but its realization depends on the choice of appropriate materials. In this report, we discuss and parametrize the types of materials that can lead…
