Domain wall dynamics in a magnetoelectric antiferromagnet is analyzed, and its implications for magnetoelectric memory applications are discussed. Cr$_2$O$_3$ is used in the estimates of the materials parameters. It is found that the domain wall mobility has a maximum as a function of the electric field due to the gyrotropic coupling induced by it. In Cr$_2$O$_3$ the maximal mobility of 0.1 m/(s$\times$Oe) is reached at $E\approx0.06$ V/nm. Fields of this order may be too weak to overcome the intrinsic depinning field, which is estimated for B-doped Cr$_2$O$_3$. These major drawbacks for device implementation can be overcome by applying a small in-plane shear strain, which blocks the domain wall precession. Domain wall mobility of about 0.7 m/(s$\times$Oe) can then be achieved at $E=0.2$ V/nm. A split-gate scheme is proposed for the domain-wall controlled bit element; its extension to multiple-gate linear arrays can offer advantages in memory density, programmability, and logic functionality.
The antiferromagnetic domain structure of a multiferroic has been investigated in the presence of a ferroelectric domain structure. It has been demonstrated that an inhomogeneous magnetoelectric (flexomagnetoelectric) interaction leads to pinning of antiferromagnetic domain walls at the walls of the ferroelectric domains and to a change in the structure of antiferromagnetic domain walls.
We calculate the exact analytical solution to the domain wall properties in a multiferroic system with two order parameters that are coupled bi-quadratically. This is then adapted to the case of a magnetoelectric multiferroic material such as BiFeO3, with a view to examine critically whether the domain walls can account for the enhancement of magnetization reported for thin films fo this material, in view of the correlation between increasing magnetization and increasing volume fraction of domain walls as films become thinner. The present analysis can be generalized to describe a class of magn…
The effect of magnetic domain boundaries displacement induced by electric field is observed in epitaxial ferrite garnet films (on substrates with the (210) crystallographic orientation). The effect is odd with respect to the electric field (the direction of wall displacement changes with the polarity of the voltage) and even with respect to the magnetization in domains. The inhomogeneous magnetoelectric interaction as a possible mechanism of the effect is proposed.
Two prominent magnetoelectrics MnWO$_4$ and CuO possess low-temperature commensurate paraelectric magnetically ordered phase. Here using Monte Carlo simulations we show that the walls between the domains of this phase are ferroelectric with the same electric polarization direction and value as that in the magnetoelectric phases of these compounds. We also suggest that experimental observation of electric polarization of domain walls in MnWO$_4$ should help to determine the macroscopic interactions responsible for its magnetoelectric properties.
The room temperature magnetoelectric effect was observed in epitaxial iron garnet films that appeared as magnetic domain wall motion induced by electric field. The films grown on gadolinium-gallium garnet substrates with various crystallographic orientations were examined. The effect was observed in (210) and (110) films and was not observed in (111) films. Dynamic observation of the domain wall motion in 400 V voltage pulses gave the value of domain wall velocity in the range 30-50 m/s. The same velocity was achieved in magnetic field pulse about 50 Oe.
Interface physics in oxide heterostructures is pivotal in material's science. Domain walls (DWs) in ferroic systems are examples of naturally occurring interfaces, where order parameter of neighboring domains is modified and emerging properties may develop. Here we show that electric tuning of ferroelastic domain walls in SrTiO3 leads to dramatic changes of the magnetic domain structure of a neighboring magnetic layer (La1/2Sr1/2MnO3) epitaxially clamped on a SrTiO3 substrate. We show that by exploiting the resposiveness of DWs nanoregions to external stimuli, even in absence of any domain con…
Inhomogeneous magnetoelectric effect in magnetization distribution heterogeneities (0-degree domain walls) appeared on crystal lattice defect of the multiferroic material has been investigated. Magnetic symmetry based predictions of kind of electrical polarization distribution in their volumes were used. It was found that magnetization distribution heterogeneity with any symmetry produces electrical polarization. Results were systemized in scope of micromagnetic structure chirality. It was shown that all 0-degree domain walls with time-noninvariant chirality have identical type of spatial dist…
Controlling magnetism using voltage is highly desired for applications, but remains challenging due to fundamental contradiction between polarity and magnetism. Here we propose a mechanism to manipulate magnetic domain walls in ferrimagnetic or ferromagnetic multiferroics using electric field. Different from those studies based on static domain-level couplings, here the magnetoelectric coupling relies on the collaborative spin dynamics around domain walls. Accompanying the reversal of spin chirality driven by polarization switching, a "rolling-downhill"-like motion of domain wall is achieved a…
The chirality-dependent magnetoelectric properties of Neel-type domain walls in iron garnet films is observed. The electrically driven magnetic domain wall motion changes the direction to the opposite with the reversal of electric polarity of the probe and with the chirality switching of the domain wall from clockwise to counterclockwise. This proves that the origin of the electric field induced micromagnetic structure transformation is inhomogeneous magnetoelectric interaction.
The Haldane spin-chain compound, Tb2BaNiO5, with two antiferromagnetic transitions, one at T1=63K, and the other at T2=25K, has been recently shown by us to be an exotic multiferroic below T2. Here, we report the results of our investigations of Sr doping at the Ba site by magnetization, heat-capacity, magnetoelectric (MDE), and pyrocurrent measurements. An intriguing finding, which we stress, is that the ferroelectricity is lost even for a doping level of 10 atomic percent, though magnetic ordering prevails. The doped specimens however retain significant magnetodielectric behaviour, but with …
The dynamics of a multiferroic domain wall in which an electric field can couple to the magnetization via inhomogeneous magnetoelectric interaction is investigated by the collective-coordinate framework. We show how the electric field is capable of delaying the onset of the Walker breakdown of the domain wall motion, leading to a significant enhancement of the maximum wall velocity. Moreover, we show that in the stationary regime the chirality of the domain wall can be efficiently reversed when the electric field is applied along the direction of the magnetic field. These characteristics sugge…
In this paper, magnetoelectric effects of Sr Z-type hexaferrite, Sr3Fe24Co2O41, at room temperature is measured. The change in remanence magnetization was measured by applying a DC voltage or electric field across a slab of hexaferrite. Changes of ~ 18% in remanence was observed in an electric field of 10,000V/cm implying a similar change in the microwave permeability at frequencies below 3GHz. In these types of measurements high resistivity is critical in order to reduce current flow in the hexaferrite. The resistivity of the hexaferrite was raised to 4.28x10^8 ohm?-cm by annealing under oxyg…
We present the results of detailed dielectric investigations of the relaxation dynamics in DyMnO$_3$ multiferroic manganite. Strong low-frequency relaxation process near the paraelectric-ferroelectric phase transition is observed. The high frequency mode is directly to the relaxational motion of multiferroic domain walls. We provide an experimental evidence that this relaxation mode corresponds to a chirality switching of the spin cycloid in DyMnO$_3$. We demonstrate that the relaxation dynamics in DyMnO$_3$ is typical for an order-disorder phase transition and may be understood within a simpl…
We consider theoretically the effect of an inhomogeneous magnetoelectric coupling on the magnon-induced dynamics of a ferromagnet. The magnon-mediated magnetoelectric torque affects both the homogeneous magnetization and magnon-driven domain wall motion. In the domains, we predict a reorientation of the magnetization, controllable by the applied electric field, which is almost an order of magnitude larger than that observed in other physical systems via the same mechanism. The applied electric field can also be used to tune the domain wall speed and direction of motion in a linear fashion, pro…
Charge dipole moment and spin moment rarely coexist in single-phase bulk materials except in some multiferroics. Despite the progress in the past decade, for most multiferroics their magnetoelectric performance remains poor due to the intrinsic exclusion between charge dipole and spin moment. As an alternative approach, the oxide heterostructures may evade the intrinsic limits in bulk materials and provide more attractive potential to realize the magnetoelectric functions. Here we perform a first-principles study on LaAlO$_3$/PbTiO$_3$ superlattices. Although neither of the components is magne…
We report a comprehensive muon spin rotation ($μ$SR) study of the prototypical magnetoelectric antiferromagnet Cr$_2$O$_3$. We find the positively charged muon ($μ^+$) occupies several distinct interstitial sites, and displays a rich dynamic behavior involving local hopping, thermally activated site transitions and the formation of a charge-neutral complex composed of a muon and an electron polaron. The discovery of such a complex has implications for the interpretation of $μ$SR spectra in a wide range of magnetic oxides, and opens a route to study the dopant characteristics of interstitial hy…
In this work we show the presence of a magnetoelectric coupling in silicon-nitride gated Pt/Co/Pt heterostructures using X-ray photoemission electron microscopy (XPEEM). We observe a change in magnetic anisotropy in the form of domain wall nucleation and a change in the rate of domain wall fluctuation as a function of the applied electric field to the sample. We also observe the coexistence of in-plane and out of plane magnetization in Pt/Co/Pt heterostructures in a region around the spin reorientation transition whose formation is attributed to substrate surface roughness comparable to the fi…
The dynamic observation of domain wall motion induced by electric field in magnetoelectric iron garnet film is reported. Measurements in 800 kV/cm electric field pulses gave the domain wall velocity ~45 m/s. Similar velocity was achieved in magnetic field pulse about 50 Oe. Reversible and irreversible micromagnetic structure transformation is demonstrated. These effects are promising for applications in spintronics and magnetic memory.
Materials with long-range order like ferromagnetism or ferroelectricity exhibit uniform, yet differently oriented three-dimensional regions called domains that are separated by two-dimensional topological defects termed domain walls\cite{Tagantsev2010,AlexHubert1998}. A change of the ordered state across a domain wall can lead to local non-bulk properties such as enhanced conductance or the promotion of unusual phases\cite{Seidel2009,Meier2012,Farokhipoor2014}. Although highly desirable, controlled transfer of these exciting properties between the bulk and the walls is usually not possible. He…
Power dissipation is one of the most important factors limiting the future miniaturisation of integrated circuits. The capability of controlling magnetic states with a low voltage through magnetoelectric coupling in magnetostrictive/piezoelectric systems may pave the way toward ultra low-power electronics. Although the former effect has been demon-strated in several multiferroic heterostructures, the incorporation of such complex geometries into practical magnetic memory and logic nanodevices has been lacking. Here, we demonstrate the room temperature control of a domain wall gate with an elec…
Spintronic devices currently rely on magnetic switching or controlled motion of domain walls by an external magnetic field or spin-polarized current. Achieving the same degree of magnetic controllability using an electric field has potential advantages including enhanced functionality and low power consumption. Here, we report on an approach to electrically control local magnetic properties, including the writing and erasure of regular ferromagnetic domain patterns and the motion of magnetic domain walls, in multiferroic CoFe-BaTiO3 heterostructures. Our method is based on recurrent strain tra…
It was shown, that there are 48 magnetic point groups of the Bloch lines including 22 (11 time-invariant and 11 time-noninvariant) enantimorphic and 26 non-enantiomorphic groups. The Bloch lines with the time-noninvariant enantiomorphism have identical types (parities) of the magnetization and polarization dependences. The soliton like Bloch lines are derived from the symmetry classification. The tip electrode method of the creation of these Bloch lines is suggested for the potential applications in the magnetoelectric memory devices. The method of the experimental determination of the flexoma…
Antiferromagnets offer remarkable promise for future spintronics devices, where antiferromagnetic order is exploited to encode information. The control and understanding of antiferromagnetic domain walls (DWs) - the interfaces between domains with differing order parameter orientations - is a key ingredient for advancing such antiferromagnetic spintronics technologies. However, studies of the intrinsic mechanics of individual antiferromagnetic DWs remain elusive since they require sufficiently pure materials and suitable experimental approaches to address DWs on the nanoscale. Here we nucleate…
Magnetoelectric coupling in ferromagnet/multiferroic systems is often manifested in the exchange bias effect, which may have combined contributions from multiple sources, such as domain walls, chemical defects or strain. In this study we magnetically "fingerprint" the coupling behavior of CoFe grown on epitaxial BiFeO3 (BFO) thin films by magnetometry and first-order-reversal-curves (FORC). The contribution to exchange bias from 71°, 109° and charged ferroelectric domain walls (DWs) was elucidated by the FORC distribution. CoFe samples grown on BFO with 71° DWs only exhibit an enhancement of t…
A common scenario of magnetoelectric coupling in multiferroics is the electric polarization induced by spatially modulated spin structures. It is shown in this paper that the same mechanism works in magnetic dielectrics with inhomogeneous magnetization distribution: the domain walls and magnetic vortexes can be the sources of electric polarization. The electric field driven magnetic domain wall motion is observed in iron garnet films. The electric field induced nucleation of vortex state of magnetic nanodots is theoretically predicted and numerically simulated. From the practical point of view…
We present a theoretical study of the structure and functionality of ferroelastic domain walls in tungsten trioxide, WO$_3$. WO$_3$ has a rich structural phase diagram, with the stability and properties of the various structural phases strongly affected both by temperature and by electron doping. The existence of superconductivity is of particular interest, with the underlying mechanism as of now not well understood. In addition, reports of enhanced superconductivity at structural domain walls are particularly intriguing. Focusing specifically on the orthorhombic $β$ phase, we calculate the st…
We have observed the eigenmodes of coupled transverse domain walls in a pair of ferromagnetic nanowires. Although the pair is coupled magnetostatically, its spectrum is determined by a combination of pinning by edge roughness and dipolar coupling of the two walls. Because the corresponding energy scales are comparable, the coupling can be observed only at the smallest wire separations. A model of the coupled wall dynamics reproduces the experiment quantitatively, allowing for comparisons with the estimated pinning and domain wall coupling energies. The results have significant implications for…
In conducting ferromagnetic materials, a moving domain wall induces eddy currents in the sample which give rise to an effective retarding pressure on the domain wall. We show here that the pressure is not just proportional to the instantaneous velocity of the wall, as often assumed in domain wall models, but depends on the history of the motion. We calculate the retarding pressure by solving the Maxwell equations for the field generated by the eddy currents, and show how its effect can be accounted for by associating a negative effective mass to the magnetic wall. We analyze the dependence of …
Unusual domains with curved walls and failure to satisfy the Landau-Lifshitz-Kittel Law are modeled as folding catastrophes (saddle-node bifurcations). This description of ballistic motion in a viscous medium is based upon early work by Dawber et al., Appl. Phys. Lett. 82, 436 (2003). It suggests that ferroelectric films can exhibit folds or vortex patterns but not both.
Extensive Kerr microscopy studies reveal a strongly temperature dependent domain wall dynamics in Hall-bars made from compressively strained GaMnAs. Depending on the temperature magnetic charging of domain walls is observed and nucleation rates depend on the Hall-geometry with respect to the crystal axes. Above a critical temperature where a biaxial-to-uniaxial anisotropy transition occurs a drastic increase of nucleation events is observed. Below this temperature, the nucleation of domains tends to be rather insensitive to temperature. This first spatially resolved study of domain wall dynami…
Beyond Walker Breakdown through the Resonant Dissipation: Dramatic Enhancement of Magnetic Domain Wall Velocity via Resonant Excitation of Standing Wave Modes of Domain Wall Structure
Valleytronics is a pioneering technological field relying on the valley degree of freedom to achieve novel electronic functionalities. Topological valley-polarized electrons confined to domain walls in bilayer graphene were extensively studied in view of their potentials in valleytronics. Here, we study the magnonic version of domain wall excitations in 2D honeycomb ferromagnetic bilayers (FBL) with collinear order. In particular, we explore the implications of Dzyaloshinskii-Moriya interaction (DMI) and electrostatic doping (ED) on the existence and characteristics of 1D magnons confined to l…
