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arXiv 2406.19085cond-mat.mtrl-scicond-mat.mes-hallcond-mat.str-el
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磁电Cr$_2$O$_3$薄膜的反铁磁纳米级比特阵列

Antiferromagnetic nanoscale bit arrays of magnetoelectric Cr$_2$O$_3$ thin films

Peter Rickhaus, Oleksandr V. Pylypovskyi, Gediminas Seniutinas, Vicent Borras, Paul Lehmann, Kai Wagner, Liza Žaper, Paulina J. Prusik, Pavlo Makushko, Igor Ver… 展开作者

Peter Rickhaus, Oleksandr V. Pylypovskyi, Gediminas Seniutinas, Vicent Borras, Paul Lehmann, Kai Wagner, Liza Žaper, Paulina J. Prusik, Pavlo Makushko, Igor Veremchuk, Tobias Kosub, René Hübner, Denis D. Sheka, Patrick Maletinsky, Denys Makarov

AI总结:

本研究制备了100纳米厚磁电Cr$_2$O$_3$薄膜的圆形纳米比特阵列,发现随尺寸减小畴结构从多畴态变为单畴态,并通过自旋晶格模拟揭示其由冷却时的能量耗散主导,为单畴AFM存储器件的制备提供了途径。

摘要:

氧化物反铁磁体(AFMs)的磁性已在单晶和扩展薄膜中得到研究。AFM纳米结构的性质仍未被充分探索。在此,我们报告了颗粒状100纳米厚磁电Cr$_2$O$_3$薄膜的制备和磁成像,该薄膜被图案化为圆形比特,直径从500纳米降至100纳米。随着横向尺寸的变化,畴结构从较大比特的多畴态演变为最小比特的单畴态。基于自旋晶格模拟,我们表明颗粒状AFM比特中畴图案形成的物理机制主要由冷却过程中的能量耗散决定,这导致AFM比特畴壁的运动和排斥。我们的结果为制备单畴AFM比特图案化存储器件以及探索AFM纳米结构与其几何形状之间的相互作用提供了途径。

英文摘要:

Magnetism of oxide antiferromagnets (AFMs) has been studied in single crystals and extended thin films. The properties of AFM nanostructures still remain underexplored. Here, we report on the fabrication and magnetic imaging of granular 100-nm-thick magnetoelectric Cr$_2$O$_3$ films patterned in circular bits with diameters ranging from 500 down to 100 nm. With the change of the lateral size, the domain structure evolves from a multidomain state for larger bits to a single domain state for the smallest bits. Based on spin-lattice simulations, we show that the physics of the domain pattern formation in granular AFM bits is primarily determined by the energy dissipation upon cooling, which results in motion and expelling of AFM domain walls of the bit. Our results provide a way towards the fabrication of single domain AFM-bit-patterned memory devices and the exploration of the interplay between AFM nanostructures and their geometric shape.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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