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arXiv 1004.3974cond-mat.mtrl-sci
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磁电反铁磁体边界的平衡磁化强度

Equilibrium magnetization at the boundary of a magnetoelectric antiferromagnet

K. D. Belashchenko

摘要:

利用对称性论证了磁电反铁磁体的边界具有平衡磁化强度。这种磁化耦合到体反铁磁序参量,并且可以通过E场和B场的组合与其一起切换。因此,磁电体的反铁磁畴状态可以用作纳米电子器件应用中的非易失性可切换状态变量。机制影响的边界磁化强度和温度依赖性进行了分类。如果边界打破了反铁磁子晶格的等效性,则边界磁化强度可以特别大。

英文摘要:

Symmetry arguments are used to show that a boundary of a magnetoelectric antiferromagnet has an equilibrium magnetization. This magnetization is coupled to the bulk antiferromagnetic order parameter and can be switched along with it by a combination of E and B fields. As a result, the antiferromagnetic domain state of a magnetoelectric can be used as a non-volatile switchable state variable in nanoelectronic device applications. Mechanisms affecting the boundary magnetization and its temperature dependence are classified. The boundary magnetization can be especially large if the boundary breaks the equivalence of the antiferromagnetic sublattices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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