Collective Coordinate Descriptions of Magnetic Domain Wall Motion in Perpendicularly Magnetized Nanostructures under the Application of In-plane Fields
S. Ali Nasseri, Eduardo Martinez, Gianfranco Durin
Manipulation of magnetic domain walls can be used to improve the capabilities of the next generation of memory and sensing devices. Materials of recent interest for such devices include heterostructures of ultrathin ferromagnets sandwiched between a heavy metal and an oxide, where spin-orbit coupling and broken inversion symmetry give rise to the Dzyaloshinskii-Moriya interaction (DMI), stabilizing chiral domain walls. The efficiency of the motion of these chiral domain walls may be controlled using in-plane magnetic fields. This property has been used for measurement of DMI strength. While micromagnetic simulations are able to accurately predict domain wall motion under in-plane fields in these materials, collective coordinate models such as the $q-ϕ$ and $q-ϕ-χ$ models fail to reproduce the micromagnetic results. In this theoretical work, we present a set of extended collective coordinate models including canting in the domains, which better reproduce micromagnetic results, and helps us better understand the effect of in-plane fields on magnetic domain walls. These models are used in conjunction with micromagnetic simulations to identify critical points observed in the motion of the domain walls driven by out-of-plane magnetic fields, and electric current under magnetic in-plane fields. Our new models and results help in the development of future domain wall based devices based on perpendicularly magnetized materials.
Spinmotive force induced by domain wall motion in perpendicularly magnetized nanowires is numerically demonstrated. We show that using nanowires with large magnetic anisotropy can lead to a high stability of spinmotive force under strong magnetic fields. We observe spinmotive force in the order of tens of microvolt in a multilayered Co/Ni nanowire and in the order of several hundred microvolt in a FePt nanowire; the latter is two orders of magnitude greater than that in permalloy nanowires reported previously. The narrow structure and low mobility of a domain wall under magnetic fields in perp…
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Ferromagnetic films of L10-ordered MnGa and MnAl that exhibit giant perpendicular magnetic anisotropy and great controllability in the magnetism and structural disorders show promise not only in the applications in magnetic recording, permanent magnets and spintronics, but also in controllable studies of disorder-relevant electrical transport phenomena. In this article, we review the intriguing experimental observations of the orbital two-channel Kondo effect and anomalous Hall effect in L10-ordered MnGa and MnAl thin films with perpendicular magnetic anisotropy. We also give a perspective wit…
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The thermal stability in nanostructured magnetic systems is an important issue for applications in information storage. From a theoretical and simulation perspective, an accurate prediction of thermally-activated transitions is a challenging problem because desired retention times are on the order of 10 years, while the characteristic time scale for precessional magnetization dynamics is of the order of nanoseconds. Here, we present a theoretical study of the thermal stability of magnetic elements in the form of perpendicularly-magnetized ferromagnetic disks using the forward flux sampling met…
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Ferrimagnets, which contain the advantages of both ferromagnets (detectable moments) and antiferromagnets (ultrafast spin dynamics), have recently attracted great attention. Here we report the optimization of epitaxial growth of a tetragonal perpendicularly magnetized ferrimagnet Mn2Ga on MgO. Electrical transport, magnetic properties and the anomalous Hall effect (AHE) were systematically studied. Furthermore, we successfully integrated high-quality epitaxial ferrimagnetic Mn2Ga thin films onto ferroelectric PMN-PT single crystals with a MgO buffer layer. It was found that the AHE of such a f…
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We proposed a novel and simple multilayer structure to realize the deterministic switching of perpendicularly magnetized layers (Co in our work) by spin orbital torque from the spin Hall Effect in this paper. A pinned layer is introduced, antiferromagnetically coupled to the magnetic Co layer. We have confirmed the deterministic switching of perpendicularly magnetized layers from perspectives of switching loops, trajectories and switching properties under periodic spin currents through micromagnetic simulation. The antiferromagnetic interaction accounts for the deterministic switching exhibite…
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A magnetic skyrmion isusually refers to a twisted spin texture surrounded by uniformly aligned out-of-plane spinsin the background of a uniformly magnetized state. The invariance of the magnetic skyrmion conserves its topological charge under any continuous transformations of the spin textures, leads to which represents the robustness of a magnetic skyrmion their texture against external perturbations, making it ideal to use skyrmions as . Such a behaviour is required for an ideal information carriers. To date, most magnetic skyrmion studies have been performedfocused on in perpendicularly mag…
We investigate the Gilbert damping and the magnetization switching of perpendicularly magnetized FeCoB-based free layers embedded in tunnel junctions adequate for spin-torque operated memories. We study the influence of the boron content in MgO / FeCoB /Ta systems alloys on their Gilbert damping after crystallization annealing. Increasing the boron content from 20 to 30\% increases the crystallization temperature, thereby postponing the onset of elemental diffusion within the free layer. This reduction of the interdiffusion of the Ta atoms helps maintaining the Gilbert damping at a low level o…
We time-resolve the spin-transfer-torque-induced switching in perpendicularly magnetized tunnel junctions of diameters from 50 to 250 nm in the thermally activated regime. When the field and the spin-torque concur to favor the P to AP transition, the reversal yields monotonic resistance ramps that can be interpreted as a domain wall propagation through the device at velocities of 17 to 30 nm/ns; smaller cells switch hence faster. When the field hinders the P to AP transition, the switching is preceded by repetitive switching attempts, during which the resistance transiently increases until suc…
Tailoring Ultrathin Magnetic Multilayers at Terraced Topologically Insulating Interfaces for Perpendicularly Magnetized Domains
University of Leeds(利兹大学);ISIS Neutron and Muon Source, STFC Rutherford Appleton Laboratory(STFC卢瑟福阿普尔顿实验室中子与μ子源);Diamond Light Source(钻石光源);Imperial College London(伦敦帝国理工学院)
Centro Atómico Bariloche(巴里洛切原子中心);Instituto Balseiro, Universidad Nacional de Cuyo–CNEA(巴尔塞罗研究所,门多萨国立大学-国家原子能委员会);Instituto de Nanociencia y Materiales de Aragón (INMA-CSIC)(阿拉贡纳米与材料研究所);Universidad de Zaragoza(萨拉戈萨大学)
Magnetization dynamics are strongly influenced by damping. An effective damping constant αeff is often determined experimentally from the spectral linewidth of the free induction decay of the magnetization after the system is excited to its non-equilibrium state. Such an αeff, however, reflects both intrinsic damping as well as inhomogeneous broadening. In this paper we compare measurements of the magnetization dynamics in ultrathin non-epitaxial films having perpendicular magnetic anisotropy using two different techniques, time-resolved magneto optical Kerr effect (TRMOKE) and hybrid optical-…
We study how the shape of the spinwave resonance lines in rf-voltage induced FMR can be used to extract the spinwave density of states and the damping within the precessing layer in nanoscale tunnel junctions that possess perpendicular anisotropy. We work with a field applied along the easy axis to preserve the uniaxial symmetry of the system. We describe the set-up to study the susceptibility contributions of the spin waves in the field-frequency space. We then identify the maximum device size above which the spinwaves can no longer be studied in isolation as the linewidths of their responses…
Deterministic current-induced spin-orbit torque (SOT) switching of magnetization in a heavy transition metal/ferromagnetic metal/oxide magnetic heterostructure with the ferromagnetic layer being perpendicularly-magnetized typically requires an externally-applied in-plane field to break the switching symmetry. We show that by inserting an in-plane magnetized ferromagnetic layer CoFeB underneath the conventional W/CoFeB/MgO SOT heterostructure, deterministic SOT switching of the perpendicularly-magnetized top CoFeB layer can be realized without the need of in-plane bias field. Kerr imaging study…
The critical current of the self-oscillation of spin torque oscillator (STO) consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer was studied by solving the Landau-Lifshitz-Gilbert (LLG) equation. We found that the critical current diverged at certain field directions, indicating that the self-oscillation does not occur at these directions. It was also found that the sign of the critical current changed depending on the applied field direction.
Oscillation frequency of spin torque oscillator with a perpendicularly magnetized free layer and an in-plane magnetized pinned layer is theoretically investigated by taking into account the field-like torque. It is shown that the field-like torque plays an important role in finding the balance between the energy supplied by the spin torque and the dissipation due to the damping, which results in a steady precession. The validity of the developed theory is confirmed by performing numerical simulations based on the Landau-Lifshitz-Gilbert equation.
The self-oscillation of the magnetization in a spin torque oscillator (STO) with a perpendicularly magnetized free layer and an in-plane magnetized pinned layer in the absence of an applied magnetic field was studied by numerically solving the Landau-Lifshitz-Gilbert equation. It was pointed out that field-like torque was necessary to realize stable self-oscillation in this type of STO at zero field. The numerical simulation at finite temperature showed that the presence of the field-like torque led to a high power with a relatively high oscillation frequency.
Theoretical conditions to excite self-oscillation in a spin torque oscillator consisting of a perpendicularly magnetized free layer and an in-plane magnetized pinned layer are investigated by analytically solving the Landau-Lifshitz-Gilbert equation. The analytical relation between the current and oscillation frequency is derived. It is found that a large amplitude oscillation can be excited by applying a small field pointing to the direction anti-parallel to the magnetization of the pinned layer. The validity of the analytical results is confirmed by comparing with numerical simulation, showi…
We have measured spin transfer-induced dynamics in magnetic nanocontact devices having a perpendicularly magnetized Co/Ni free layer and an in-plane magnetized CoFe fixed layer. The frequencies and powers of the excitations agree well with the predictions of the single-domain model and indicate that the excited dynamics correspond to precessional orbits with angles ranging from zero to 90 degrees as the applied current is increased at a fixed field. From measurements of the onset current as a function of applied field strength we estimate the magnitude of the spin torque asymmetry parameter la…