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arXiv 1801.02202cond-mat.mtrl-sci
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新型硫属化合物材料K2Cu2GeS4的弹性、电学、光学和热电性能

Elastic, electronic, optical and thermoelectric properties of K2Cu2GeS4: a new chalcogenide material

M. A. Ali, M. A. Hossain, M. A. Rayhan, M. M. Hossain, M. M. Uddin, M. Roknuzzaman, K. Ostrikov, A. K. M. A. Islam S. H. Naqib

摘要:

我们报告的第一性原理研究的结构,弹性,电子,光学和热电性能的新合成的K2 Cu 2GeS 4。结构参数与实验结果吻合较好。计算了K_2Cu_2GeS_4单晶的弹性常数(Cij),发现K_2Cu_2GeS_4是机械稳定的。多晶弹性常数的分析表明,该化合物预计是软的性质。Pugh比和泊松比的值表明,该化合物位于韧性/脆性行为的边界线。化学键主要是离子键,原子间力是自然界的中心,化合物是机械各向异性的。计算的电子能带分布显示半导体特性和估计的带隙是强烈依赖于所使用的功能代表的交换相关性。化学键的性质解释使用电子电荷密度映射。计算并讨论了介电常数、折射率、吸收系数、光电导、反射率和损耗函数等重要光学常数。光学电导率被发现是在良好的定性协议与能带结构计算的结果。在本研究中使用的整个温度范围内的塞贝克系数是积极的,这表明存在的p型载流子。在100 K和300 K时,获得了较大的Seebeck系数,分别为681 V/K和286 V/K。在室温下,电导率和电子热导率分别为1.8 × 10 ~(18)ms ~(-1)和0.5 × 10 ~(14)W/mK·s。K2 Cu 2GeS 4的无量纲优值在300 K时约为1.0。这表明K2 Cu 2GeS 4是热电应用的潜在候选者。

英文摘要:

We report the first principles study of structural, elastic, electronic, optical and thermoelectric properties of newly synthesized K2Cu2GeS4. The structural parameters are found to be in good agreement with experimental results. The single crystal elastic constants (Cij) are calculated and K2Cu2GeS4 is found to be mechanical stable. The analysis of polycrystalline elastic constants reveals that the compound is expected to be soft in nature. The values of Pugh and Poisson ratios suggested that the compound lies in the border line of ductile/brittle behavior. The chemical bonding is primarily ionic, the inter-atomic forces are central in nature and the compound is mechanically anisotropic. The computed electronic band profile shows semiconducting characteristics and the estimated band gap is strongly dependent on the functional used representing the exchange correlations. The nature of chemical bonding is explained using electronic charge density mapping. Important optical constants such as dielectric constants, refractive index, absorption coefficient, photoconductivity, reflectivity and loss function are calculated and discussed in detail. Optical conductivity is found to be in good qualitative agreement with the results of band structure calculations. The Seebeck coefficients are positive for the entire temperature range used in this study, suggesting the presence of p-type charge carriers. We have obtained large Seebeck coefficent, 681 V/K at 100 K and 286 V/K at 300 K. At room temperature, the electrical conductivity and electronic thermal conductivity are 1.8 31018 ms)-1 and 0.5 1014 W/mK.s, respectively. The dimensionless figure of merit of K2Cu2GeS4 is evaluated as ~1.0 at 300 K. This suggests that K2Cu2GeS4 is a potential candidate for thermoelectric applications.

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