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arXiv 1707.08083cond-mat.mes-hall

Ambipolar Landau levels and strong band-selective carrier interactions in monolayer WSe$_2$

Martin V. Gustafsson, Matthew Yankowitz, Carlos Forsythe, Daniel Rhodes, Kenji Watanabe, Takashi Taniguchi, James Hone, Xiaoyang Zhu, Cory R. Dean

英文摘要:

Monolayers (MLs) of transition metal dichalcogenides (TMDs) exhibit unusual electrical behavior under magnetic fields due to their intrinsic spin-orbit coupling and lack of inversion symmetry. While recent experiments have also identified the critical role of carrier interactions within these materials, a complete mapping of the ambipolar Landau level (LL) sequence has remained elusive. Here, we use single-electron transistors to perform LL spectroscopy in ML WSe$_2$, for the first time providing a comprehensive picture of the electronic structure of a ML TMD for both electrons and holes. We find that the LLs differ notably between the two bands, and follow a unique sequence in the valence band (VB) that is dominated by strong Zeeman effects. The Zeeman splitting in the VB is several times higher than the cyclotron energy, far exceeding the predictions of a single-particle model, and moreover tunes significantly with doping. This implies exceptionally strong many-body interactions, and suggests that ML WSe$_2$ can serve as a host for new correlated-electron phenomena.

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