arXiv 1707.079172017-07-25cond-mat.mtrl-sci

铁磁-半导体结反常隧道霍尔效应理论

Theory of the Anomalous Tunnel Hall Effect at Ferromagnet-Semiconductor Junctions

T. Huong Dang, D. Quang To, E. Erina, T. L. Hoai Nguyen, V. Safarov, H. Jaffres, H. -J. Drouhin

备注：: 6 pages, 3 figures, conference MIMS 2017 Moscow (submitted), Journal of Magnetism and Magnetic Materials (JMMM), 2017
DOI：: 10.1016/j.jmmm.2017.12.065

摘要：

我们报告在铁磁半导体结的载流子散射不对称性的理论研究。通过解析的$2\times 2$自旋模型，我们证明了当Ⅲ-Ⅴ族$T_d$对称群半导体的导带中包含Dresselhaus相互作用时，电子的透射率与其入射的平行波矢的正负号之间存在差异.这种不对称性是普遍缩放的一个独特的功能独立的自旋轨道强度。这个特殊的功能是再现的多带$\mathbf{k}\cdot \mathbf{p}$隧道传输模型。令人惊讶的是，半导体的价带由于内部原子的自旋轨道强度和不存在非对称势，透射的不对称性仍然存在。我们提出了多带$14\times 14$和$30\times 30$ $\mathbf{k}\cdot \mathbf{p}$隧穿模型与隧道传输微扰计算证实了这些结果。这表明垂直于界面的隧道自旋电流可以产生表面横向电荷电流，即所谓的反常隧道霍尔效应。

英文摘要：

We report on theoretical investigations of carrier scattering asymmetry at ferromagnet-semiconductor junctions. By an analytical $2\times 2$ spin model, we show that, when Dresselhaus interactions is included in the conduction band of III-V $T_d$ symmetry group semiconductors, the electrons may undergo a difference of transmission vs. the sign of their incident parallel wavevector normal to the in-plane magnetization. This asymmetry is universally scaled by a unique function independent of the spin-orbit strength. This particular feature is reproduced by a multiband $\mathbf{k}\cdot \mathbf{p}$ tunneling transport model. Astonishingly, the asymmetry of transmission persists in the valence band of semiconductors owing to the inner atomic spin-orbit strength and free of asymmetric potentials . We present multiband $14\times 14$ and $30\times 30$ $\mathbf{k}\cdot \mathbf{p}$ tunneling models together with tunneling transport perturbation calculations corroborating these results. Those demonstrate that a tunnel spin-current normal to the interface can generate a surface transverse charge current, the so-called Anomalous Tunnel Hall Effect.

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英文摘要：

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