分析了由\textit{a} C $_x$：H和\textit{a}非晶层交替构成的一维（1D）光子晶体的周期结构中光子态局域密度变化的影响.使用\textit{a} -Si $_{1-x}$ C $_x$：H作为发射材料使得可以检查光致发光光谱轮廓的变换，其在宽度上与光子阻带相当。实验表明，在阻带附近，发光被增强和抑制。在阻带不同边缘的发光峰的相对强度随单个\textit{a} -Si $_{1-x}$ C $_x$：H薄膜的阻带位置和光致发光峰的失谐而变化。在所考虑的系统中的Purcell效应的理论描述的方法，其中的局域光子态密度的计算方面的一维模型。%实验测量和计算光谱之间获得了良好的一致性。结果表明，局域态密度的特定部分在1D光子晶体的阻带的长波长（低频）边缘处显著增加，这是由于光波的电场在\textit{a} -Si $_{1-x}$ C $_x$：H的空间区域中的主要局域化，该空间区域与\textit{a} -SiO $_2$相比具有更高的相对介电常数。
英文摘要：
Effects associated with the change in the local density of photonic states in a periodic structure based on alternating \textit{a}-Si$_{1-x}$C$_x$:H and \textit{a}-SiO$_2$ amorphous layers forming a one-dimensional (1D) photonic crystal have been analyzed. The use of \textit{a}-Si$_{1-x}$C$_x$:H as the emitting material made it possible to examine the transformation of the photoluminescence spectrum contour that is comparable in width with the photonic stop-band. It was experimentally demonstrated that the emission is enhanced and suppressed in the vicinity of the stop-band. The relative intensities of the luminescence peaks at different edges of the stop-band vary with the detuning of the stop-band position and photoluminescence peak of a single \textit{a}-Si$_{1-x}$C$_x$:H film. The Purcell effect in the system under consideration was theoretically described by the method in which the local density of photonic states is calculated in terms of a 1D model. %A good agreement was obtained between the experimentally measured and calculated spectra. It was shown that the specific part of local density of states substantially increases at the long-wavelength (low-frequency) edge of the stop-band of a 1D photonic crystal as a result of the predominant localization of the electric field of the light wave in the spatial regions of \textit{a}-Si$_{1-x}$C$_x$:H which have a higher relative permittivity as compared with \textit{a}-SiO$_2$.
Evanescent absorption spectroscopy of transition metal dichalcogenide materials using guided photoluminescence in Si$_3$N$_4$ photonic waveguides
University of Barcelona（巴塞罗那大学）；Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST（加泰罗尼亚纳米科学和纳米技术研究所（ICN2），西班牙国家研究委员会和巴塞罗那理工大学）；Warsaw University of Technology（华沙理工大学）
