多孔硅中通过氯金酸直接还原制备孔内金纳米颗粒实现等离子体增强光致发光
Plasmonic-enhanced photoluminescence in porous silicon with pore-embedded gold nanoparticles fabricated by direct reduction of chloroauric acid
AI总结：
本研究通过在多孔硅光子结构内直接还原氯金酸合成金纳米颗粒，利用等离子体近场增强实现了多孔硅光致发光六倍提升，主要贡献在于解决了金纳米颗粒尺寸和位置控制难题，并展示了其在发光器件和传感器中的应用潜力。
AI中文摘要：
多孔硅（p-Si）发光的低效率阻碍了硅基光电器件的发展。利用金纳米颗粒（AuNPs）掺入光子结构所产生的近场增强来提高多孔硅的发射，可能是最可行的替代方案。然而，由于难以控制金纳米颗粒相对于发射性多孔硅层的尺寸和位置，等离子体共振与多孔硅发射的耦合具有挑战性。在本研究中，通过在多孔硅光子结构内部对氯金酸进行清洁的直接还原，合成了金纳米颗粒。结果表明，金纳米颗粒能够沿着多孔硅结构的孔隙全程合成，从而使得多孔硅的光致发光强度提高了六倍，特别是对于567纳米处的发射带，这归因于等离子体效应。这种杂化材料的潜在应用包括发光器件和基于光致发光的传感器。
英文摘要：
The low efficiency of porous silicon (p-Si) luminescence hinders the development of silicon-based optoelectronic devices. The increase in p-Si emission using near-field enhancement, owing to the incorporation of gold nanoparticles (AuNPs) into the photonic structure, is probably the most viable alternative. However, the coupling of plasmon resonance to p-Si emission is challenging because of the difficulty in controlling the size and location of the AuNPs with respect to the emissive p-Si layer. In this study, AuNPs were synthesized by clean direct reduction of chloroauric acid inside a p-Si photonic structure. As a result, AuNPs could be synthesized all along the pores of the p-Si structure, allowing to obtain a six-fold enhancement of the p-Si photoluminescence, specifically for the emission band at 567 nm owing to the plasmon effect. Possible applications of this hybrid material include light-emitting devices and photoluminescence-based sensors.
