埋藏应力器工程用于具有局部密度变化的位控制InGaAs量子点以实现集成量子光子学
Buried Stressor Engineering for Position-Controlled InGaAs Quantum Dots with Local Density Variation for Integrated Quantum Photonics
AI总结：
通过埋藏应力器方法实现位控制InGaAs量子点的单片两步外延生长，实现精确位置和不同密度的量子点成核，为集成量子光子学应用提供新途径。
摘要：
我们报道了通过埋藏应力器方法实现位控制InGaAs量子点的单片、两步外延生长。由于高制备精度，我们实现了单个埋藏应力器孔径的横向位移为$17^{+19}_{-17}$nm，从 mesa 中心。我们提供了对位控制量子点的广泛微光致发光和阴极发光表征，并给出了理论计算，解释了应力器孔径对量子点发射特性、位置和密度的影响。我们展示了相同尺寸孔径的成核过程的可重复性，并在单个活性层生长步骤中实现了精确位置、低密度和高密度量子点成核。本文所展示的结果表明，埋藏应力器概念在制造单光子芯片方面具有显著潜力，同时结合了单光子源和具有不同局部密度的微激光器，为具有在光子量子技术中应用的高功能源模块铺平了道路。
英文摘要：
We report on the monolithic, two-step epitaxial growth of site-controlled InGaAs quantum dots via the buried stressor method with local quantum dot density variation. As a result of high fabrication accuracy, we achieve low lateral displacements of the individual buried stressor apertures of $ 17^{+19}_{-17}$~nm from mesa centers. We provide extensive micro-photoluminescence and cathodoluminescence characterization of the site-controlled quantum dots and give theoretical calculations, explaining the effect of the stressor aperture on the quantum dot emission properties, positioning, and density. We show reproducibility of the nucleation process for apertures of the same size and achieve precisely-positioned, low- and high-density quantum dot nucleation within one active layer growth step. The results presented in this work demonstrate the significant potential of the buried stressor concept in fabricating single photonic chips, simultaneously combining single-photon sources and microlasers featuring different local densities of site-controlled quantum dots, paving the way for highly functional source modules with applications in photonic quantum technology.
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