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arXiv 1706.03022cond-mat.str-el
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多层Mott-Hubbard异质结中平行于平面的热电输运

Thermoelectric transport parallel to the planes in a multilayered Mott-Hubbard heterostructure

Veljko Zlatić, J. K. Freericks

摘要:

本文提出了一种平行于多层膜界面的电荷和热输运理论,其中界面作用引起电荷的重新分布。随后的电场自洽地耦合到巡回电子,使得ML的性质关键地取决于现场库仑力和远程静电力之间的相互作用。ML由Falicov-Kimball模型描述,通过同时迭代DMFT和Poisson方程获得自洽解。这产生了重建的电荷分布,电势,平面态密度,输运函数,和设备的输运系数。我们发现,一个异质结构的两个莫特-哈伯德绝缘体的展品,在一个大的温度间隔,线性电导率和一个大的温度无关的热电势。电荷和能量流被限制在ML的中心部分。我们的研究结果表明,相关的多层膜具有潜在的应用,通过调整的带移和库仑相关的中心平面上,我们可以带来的化学势的Mott-Hubbard间隙边缘的紧邻和优化的传输性能的设备。在这样的异质结构中,小的栅极电压可以容易地引起MI转变。这种转换不涉及电子在宏观距离上的扩散,并且比普通半导体快得多。此外,具有小ZT的强相关材料的正确组合至少在理论上可以产生具有大ZT的异质结构。

英文摘要:

We present a theory for charge and heat transport parallel to the interfaces of a multilayer (ML) in which the interfacing gives rise the redistribution of the electronic charges. The ensuing electrical field couples self-consistently to the itinerant electrons, so that the properties of the ML crucially depend on an interplay between the on-site Coulomb forces and the long range electrostatic forces. The ML is described by the Falicov-Kimball model and the self-consistent solution is obtained by iterating simultaneously the DMFT and the Poisson equations. This yields the reconstructed charge profile, the electrical potential, the planar density of states, the transport function, and the transport coefficients of the device. We find that a heterostructure built of two Mott-Hubbard insulators exhibits, in a large temperature interval, a linear conductivity and a large temperature-independent thermopower. The charge and energy currents are confined to the central part of the ML. Our results indicate that correlated multilayers have the potential for applications; by tuning the band shift and the Coulomb correlation on the central planes, we can bring the chemical potential in the immediate proximity of the Mott-Hubbard gap edge and optimize the transport properties of the device. In such a heterostructure, a small gate voltage can easily induce a MI transition. This switching does not involve the diffusion of electrons over macroscopic distances and it is much faster than in ordinary semiconductors. Furthermore, the right combination of strongly correlated materials with small ZT can produce, theoretically at least, a heterostructure with a large ZT.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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