莫特绝缘体边界的化学压效应和尖晶石钒酸盐的巡游电子极限
Chemical Pressure effect at the boundary of Mott insulator and itinerant electron limit of Spinel Vanadates
摘要：
通过在ZnV_2O_4的Zn位上掺杂Mn和Co，研究了化学压力对ZnV_2O_4的结构、输运、磁性和电子性质（通过测量X射线光电子能谱）的影响。随着Mn掺杂，V-V距离增加，并且随着Co掺杂，V-V距离减小。电阻率和热电功率数据表明，随着V-V距离的减小，系统走向量子相变。输运数据还表明，导电是由于小极化子跳跃。化学压强显示了电荷间隙和活化能的非单调行为。XPS研究还支持了随着V-V分离的减小，系统向量子相变移动的观察。另一方面，当Ti掺杂在ZnV_2O_4的V位上时，金属-金属距离减小，同时TN也增加。
英文摘要：
The chemical pressure effect on the structural, transport, magnetic and electronic properties (by measuring X-ray photoemission spectroscopy) of ZnV2O4 has been investigated by doping Mn and Co on the Zinc site of ZnV2O4. With Mn doping the V-V distance increases and with Co doping it decreases. The resistivity and thermoelectric power data indicate that as the V-V distance decreases the system moves towards Quantum Phase Transition. The transport data also indicate that the conduction is due to the small polaron hopping. The chemical pressure shows the non-monotonous behaviour of charge gap and activation energy. The XPS study also supports the observation that with decrease of the V-V separation the system moves towards Quantum Phase Transition. On the other hand when Ti is doped on the V-site of ZnV2O4 the metal-metal distance decreases and at the same time the TN also increases.
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