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arXiv 1202.1844cond-mat.str-el
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强关联材料多层膜电容的多体效应

Many-body effects on the capacitance of multilayers made from strongly correlated materials

S. T. F. Hale, J. K. Freericks

摘要:

Kopp和Mannhart最近对氧化物界面处形成的新型电子系统的研究表明,这些器件的电容会产生有趣的影响。我们采用非均匀动力学平均场论来计算多层纳米结构的电容。这些多层纳米结构是由半无限的金属铅耦合通过一个强相关的介电势垒区。通过调节相互作用强度,可以将势垒区从金属区调节到莫特绝缘体。我们研究了不同的势垒宽度,温度,电势差,屏蔽长度和化学势的影响。我们发现,相互作用强度对电容有较强的影响,而电势和温度的依赖性较弱。

英文摘要:

Recent work by Kopp and Mannhart on novel electronic systems formed at oxide interfaces has shown interesting effects on the capacitances of these devices. We employ inhomogeneous dynamical mean-field theory to calculate the capacitance of multilayered nanostructures. These multilayered nanostructures are composed of semi-infinite metallic leads coupled via a strongly correlated dielectric barrier region. The barrier region can be adjusted from a metallic regime to a Mott insulator through adjusting the interaction strength. We examine the effects of varying the barrier width, temperature, potential difference, screening length, and chemical potential. We find that the interaction strength has a relatively strong effect on the capacitance, while the potential and temperature show weaker dependence.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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