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交替扭曲多层MoTe₂中的分数陈绝缘体

Fractional Chern insulators in alternating twisted multilayer MoTe$_{2}$

Xi-Hang Feng, Shi-Ping Ding, Xiang-Jian Hou, Ying-Hai Wu, Jin-Hua Gao

arXiv 2607.13807首次发表:更新:

AI 中文总结

研究交替扭曲多层MoTe₂中的强关联多体状态,通过滑动顶层与加垂直电场实现多种能带结构,精确对角化发现分数陈绝缘体在特定参数范围稳定,揭示滑动可探测莫尔系统多体状态。

AI 中文摘要

我们研究了交替扭曲的三层和四层MoTe₂中的强关联多体状态。通过相对于其他层滑动顶层并施加垂直电场,可以实现多种能带结构。在许多情况下,最顶层的空穴带具有陈数为1,并且其量子几何性质可以在一定程度上进行调节。精确对角化表明,分数陈绝缘体在某些参数范围内是稳定的,但在某些范围内即使能带是拓扑的也不稳定。这种对比主要归因于由迹条件量化的不同量子几何。我们的结果表明,滑动可以作为探测莫尔系统中多体状态的有用旋钮。

英文摘要

We study strongly correlated many-body states in alternating twisted trilayer and tetralayer MoTe$_{2}$. By sliding the top layer with respect to others and applying a perpendicular electric field, a variety of band structures can be realized. In many cases, the topmost hole band has unity Chern number and its quantum geometric properties can be tuned to some extent. Exact diagonalizations suggest that fractional Chern insulators are stabilized in certain parameter regimes but not in some regimes even when the band is topological. This contrast is attributed primarily to different quantum geometries as quantified by the trace condition. Our results demonstrate that sliding can serve as a useful knob for probing many-body states in moiré systems.

Comments9 pages, 10 figures

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