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arXiv 1702.01732cond-mat.mes-hallquant-ph
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纳米氮化硅谐振器应力各向异性的偏振分析

Polarimetric analysis of stress anisotropy in nanomechanical silicon nitride resonators

Thibault Capelle, Yeghishe Tsaturyan, Andreas Barg, Albert Schliesser

摘要:

我们实现了一个圆形的灰场偏光镜图像应力引起的双折射薄(亚微米厚)氮化硅(SiN)膜和字符串。这使得主应力和应力各向异性的取向的定量映射成为可能,与有限元建模(FEM)互补并一致。此外,使用一个众所周知的应力各向异性的样品,我们提取一个新的值的光弹性(布鲁斯特)系数的氮化硅,$C \approx (3.4~\pm~0.1)\times~10^{-6}~\mathrm{MPa}^{-1}$。我们探讨了可能的应用方法来分析和质量控制与声子晶体图案的应力膜

英文摘要:

We realise a circular gray-field polariscope to image stress-induced birefringence in thin (submicron thick) silicon nitride (SiN) membranes and strings. This enables quantitative mapping of the orientation of principal stresses and stress anisotropy, complementary to, and in agreement with, finite element modeling (FEM). Furthermore, using a sample with a well known stress anisotropy, we extract a new value for the photoelastic (Brewster) coefficient of silicon nitride, $C \approx (3.4~\pm~0.1)\times~10^{-6}~\mathrm{MPa}^{-1}$. We explore possible applications of the method to analyse and quality-control stressed membranes with phononic crystal patterns

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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