Interface control of ferroelectricity in a SrRuO3/BaTiO3/SrRuO3 capacitor and its critical thickness
Yeong Jae Shin, Yoonkoo Kim, Sung-Jin Kang, Ho-Hyun Nahm, Pattukkannu Murugavel, Jeong Rae Kim, Myung Rae Cho, Lingfei Wang, Sang Mo Yang, Jong-Gul Yoon, Jin-Se… 展开作者
Yeong Jae Shin, Yoonkoo Kim, Sung-Jin Kang, Ho-Hyun Nahm, Pattukkannu Murugavel, Jeong Rae Kim, Myung Rae Cho, Lingfei Wang, Sang Mo Yang, Jong-Gul Yoon, Jin-Seok Chung, Miyoung Kim, Hua Zhou, Seo Hyoung Chang, Tae Won Noh
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30 pages, 11 figures (4 for main, 7 for supporting information)
The atomic-scale synthesis of artificial oxide heterostructures offers new opportunities to create novel states that do not occur in nature. The main challenge related to synthesizing these structures is obtaining atomically sharp interfaces with designed termination sequences. Here, we demonstrate that the oxygen pressure (PO2) during growth plays an important role in controlling the interfacial terminations of SrRuO3/BaTiO3/SrRuO3 (SRO/BTO/SRO) ferroelectric capacitors. The SRO/BTO/SRO heterostructures were grown by the pulsed laser deposition (PLD) method. The top SRO/BTO interface grown at high PO2 (around 150 mTorr) usually exhibited a mixture of RuO2-BaO and SrO-TiO2 terminations. By reducing PO2, we obtained atomically sharp SRO/BTO top interfaces with uniform SrO-TiO2 termination. Using capacitor devices with symmetric and uniform interfacial termination, we were able to demonstrate for the first time that the ferroelectric (FE) critical thickness can reach the theoretical limit of 3.5 unit cells (u.c.).
Sizes of Ferroelectricity Appearance and Disappearence in Nanosized Hafnia-Zirconia:Landau-type Theory
Institute of Physics of the National Academy of Sciences of Ukraine（乌克兰国家科学院物理研究所）；Frantsevich Institute for Problems in Materials Science of the National Academy of Sciences of Ukraine（乌克兰国家科学院弗兰采维奇材料科学问题研究所）；Department of Materials Science and Engineering, University of Tennessee（田纳西大学材料科学与工程系）；Faculty of Radiophysics, Electronics and Computer Systems, Taras Shevchenko National University of Kyiv（基辅塔拉斯舍甫琴科国立大学无线电物理、电子和计算机系统学院）；V. Lashkariov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine（乌克兰国家科学院V.拉什卡廖夫半导体物理研究所）
Ferroelectricity in Atomically Thin Metallic TaNiTe$_5$ with Ultrahigh Carrier Density
State Key Laboratory of Micro-nano Engineering Science, Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), School of Physics and Astronomy, Shanghai Jiao Tong University（上海交通大学物理与天文学院微纳工程科学国家重点实验室人工结构与量子控制教育部重点实验室）；School of Physical Science and Technology, Ningbo University（宁波大学物理科学与技术学院）；School of Physics, Zhejiang University of Technology（浙江工业大学物理学院）；Tsung-Dao Lee Institute, Shanghai Jiao Tong University（上海交通大学李政道研究所）；Collaborative Innovation Center of Advanced Microstructures（先进微结构协同创新中心）
