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arXiv 1701.05972cond-mat.mtrl-sci
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等离子体杂质半导体纳米晶:性质、制备、应用及展望

Plasmonic Doped Semiconductor Nanocrystals: Properties, Fabrication, Applications and Perspectives

Ilka Kriegel, Francesco Scotognella, Liberato Manna

摘要:

简并杂质半导体纳米晶体由于其在近红外波段的可调谐局域表面等离子体共振(LSPR)而受到人们的关注。在载流子密度为1021 cm^-3的材料中,高掺杂水平会导致掺杂水平的简并和近红外光谱中强烈的等离子体吸收。与贵金属相比,简并杂质半导体NC中较低的载流子密度使得能够在宽光谱范围内进行LSPR调谐,因为即使载流子密度的微小变化也会强烈影响LSPR的光谱位置。我们专注于铜硫族化物NC和杂质掺杂的金属氧化物NC作为贵金属的最研究的替代品。我们揭示了在空位掺杂铜硫属化物NCs中LSPR调谐的结构变化,并提供了杂质掺杂金属氧化物NCs的LSPR改性的根本不同机制的图片。本文综述了等离子体简并掺杂纳米粒子的光学特性,着重介绍了各种光学测量方法和光学模拟方法。这些发现合并在一个详尽的部分,新的和令人兴奋的应用程序的基础上的特殊特性,等离子体半导体NC带来的。

英文摘要:

Degenerately doped semiconductor nanocrystals (NCs) are of recent interest to the NC community due to their tunable localized surface plasmon resonances (LSPRs) in the near infrared (NIR). The high level of doping in such materials with carrier densities in the range of 1021 cm^-3 leads to degeneracy of the doping levels and intense plasmonic absorption in the NIR. The lower carrier density in degenerately doped semiconductor NCs compared to noble metals enables LSPR tuning over a wide spectral range, since even a minor change of the carrier density strongly affects the spectral position of the LSPR. We focus on copper chalcogenide NCs and impurity doped metal oxide NCs as the most investigated alternatives to noble metals. We shed light on the structural changes upon LSPR tuning in vacancy doped copper chalcogenide NCs and deliver a picture for the fundamentally different mechanism of LSPR modification of impurity doped metal oxide NCs. We review on the peculiar optical properties of plasmonic degenerately doped NCs by highlighting the variety of different optical measurements and optical modeling approaches. These findings are merged in an exhaustive section on new and exciting applications based on the special characteristics that plasmonic semiconductor NCs bring along.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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