Atomic Lattice Disorder in Charge Density Wave Phases of Exfoliated Dichalcogenides (1T-TaS2)
Robert Hovden, Adam W. Tsen, Pengzi Liu, Benjamin H. Savitzky, Ismail El Baggari, Yu Liu, Wenjian Lu, Yuping Sun, Philip Kim, Abhay N. Pasupathy, Lena F. Kourkoutis
备注：
4 figures in Proceedings of the National Academy of Sciences of the United States of America, 2016
Charge density waves (CDW) and their concomitant periodic lattice distortions (PLD) govern the electronic properties in many layered transition-metal dichalcogenides. In particular, 1T-TaS2 undergoes a metal-to-insulator phase transition as the PLD becomes commensurate with the crystal lattice. Here we directly image PLDs of the nearly-commensurate (NC) and commensurate (C) phases in thin exfoliated 1T-TaS2 using atomic resolution scanning transmission electron microscopy at room and cryogenic temperature. At low temperatures, we observe commensurate PLD superstructures, suggesting ordering of the CDWs both in- and out-of-plane. In addition, we discover stacking transitions in the atomic lattice that occur via one bond length shifts. Interestingly, the NC PLDs exist inside both the stacking domains and their boundaries. Transitions in stacking order are expected to create fractional shifts in the CDW between layers and may be another route to manipulate electronic phases in layered dichalcogenides.
Defect-carrier interaction in transition metal dichalcogenides (TMDs) play important roles in carrier relaxation dynamics and carrier transport, which determines the performance of electronic devices. With femtosecond laser time-resolved spectroscopy, we investigated the effect of grain boundary/edge defects on the ultrafast dynamics of photoexcited carrier in MBE grown MoTe2 and MoSe2. We found that, comparing with exfoliated samples, carrier recombination rate in MBE grown samples accelerates by about 50 times. We attribute this striking difference to the existence of abundant grain boundary…
2H-TaSe2 is a model transition metal dichalcogenide material that develops charge density waves (CDWs).Here we present variable-temperature Raman spectroscopy study on both incommensurate charge density waves (ICDW) and optical phonon modes of 2H-TaSe2 thin layers exfoliated onto SiO2 substrate. Raman scattering intensities of all modes reach a maximum when the sample thickness is about 11 nm. This phenomenon can be explained by optical interference effect between the sample and the substrate. The E2gICDW amplitude modes experience redshift as temperature increases. We extract ICDW transition …
In this paper, the interaction of few tens of atoms containing gold nanoclusters with two dimensional nanosheets of transition metal dichalcogenides nanosheets has been explored. The gold nanoclusters have been synthesized using chemical reduction method in presence of protein molecules as stabilizing agent. The transition metal dichalcogenides nanosheets of molybdenum disulfide (MoS$_2$) has been chemically exfoliated. Different microscopic and optical spectroscopic tools have been used for characterizing the physical properties of the gold nanoclusters and the two dimensional nanosheets of M…
The growth of single crystals of MoS2 and WS2 by materials transport through a liquid salt flux made from a low melting mixture of NaCl and CsCl is described. The crystals are characterized by single crystal X-ray diffraction, which reveals that they are 2H-MoS2 with a small percentage (about 3%) of 3R intergrowths. The 2H-WS2 crystals display less than 1% of 3R intergrowths. Photoluminescence spectra of exfoliated monolayers suggest that MoS2 grown by this method has superior crystallinity in comparison to commercially-available MoS2 crystals.
Janus monolayer transition metal dichalcogenides, where one of the two chalcogen layers is substituted with a different kind of chalcogen atoms, are pushing the properties of two dimensional materials into new territories. Yet only little is known about this new kind of material class, mainly due to the challenging synthesis. In this work we propose a method to prepare high quality Janus MoSSe monolayers from as-exfoliated MoSe2 by thermal sulfurization. With this we aim to pave a way for more exotic Janus monolayers, which have been out of the experimental reach thus far. The synthesized MoSS…
Few-layered transition metal dichalcogenides (TMDs) are increasingly popular materials for optoelectronics and catalysis. Amongst the various types of TMDs available today, rhenium-chalcogenides (ReX2) stand out due to their remarkable electronic structure, such as the occurrence of anisotropic excitons and potential direct bandgap behavior throughout multi-layered stacks. In this letter, we have analyzed the nature and dynamics of charge carriers in highly crystalline liquid-phase exfoliated ReS2, using a unique combination of optical pump-THz probe and broadband transient absorption spectros…
Most III-nitride semiconductors are grown on non-lattice-matched substrates like sapphire or silicon due to the extreme difficulty of obtaining a native GaN substrate. We show that several layered transition-metal dichalcogenides are closely lattice matched to GaN and report the growth of GaN on a range of such layered materials. We report detailed studies of the growth of GaN on mechanically-exfoliated flakes WS$_2$ and MoS$_2$ by metalorganic vapour phase epitaxy. Structural and optical characterization show that strain-free, single-crystal islands of GaN are obtained on the underlying chalc…
Many atomically thin exfoliated 2D materials degrade when exposed to ambient conditions. They can be protected and investigated by means of transport and optical measurements if they are encapsulated between chemically inert single layers in the controlled atmosphere of a glove box. Here, we demonstrate that the same encapsulation procedure is also compatible with scanning tunneling microscopy (STM) and spectroscopy (STS). To this end, we report a systematic STM/STS investigation of a model system consisting of an exfoliated 2H-NbSe2 crystal capped with a protective 2H-MoS2 monolayer. We obser…
Semiconducting transition metal dichalcogenide monolayers have emerged as promising candidates for future valleytronics-based quantum information technologies. Two distinct momentum-states of tightly-bound electron-hole pairs in these materials can be deterministically initialized via irradiation with circularly polarized light. Here, we investigate the ultrafast dynamics of such a valley polarization in monolayer tungsten diselenide by means of time-resolved Kerr reflectometry. The observed Kerr signal in our sample stems exclusively from charge-neutral excitons. Our findings support the pict…
Exciton intervalley scattering, annihilation and relaxation dynamics, and diffusive transport in a monolayer transition metal dichalcogenides are central to the functionality of devices based on them. This motivated us to investigate these properties in exfoliated high-quality monolayer MoSe2 using heterodyned nonlinear four-wave-mixing transient grating spectroscopy. While free exciton excitations are found to be long-lived (~230 ps), an extremely fast intervalley scattering ( less than 120 fs) is observed leading to a negligible valley polarization, consistent with steady state photoluminesc…
Monolayer NbSe$_2$ is a nodal topological Ising superconductor at magnetic in-plane fields exceeding the Pauli limit, with nodal points strictly on high symmetry lines in the Brillouin zone. Here, we use a combined numerical and group-theoretical approach in real-space to characterize the unconventional superconducting state in monolayer transition metal dichalcogenides. Even with a conventional pairing interaction, the superconducting state is intrinsically parity-mixed and robust against on-site disorder. The interplay between the Zeeman magnetic field, strong spin-orbit interaction, and ele…
Materials exhibiting multiple stable phases can be used as functional components in electronic and optical applications if the phase transition is controllable. Group-VI transition metal dichalcogenides (TMDs, MX$_2$, where M=Mo, W and X = S, Se) are known to undergo charge induced transitions from semi-conducting H phases to metallic T phases. This occurs, for example, when bulk TMDs are exfoliated with the aid of alkali ion intercalants. However, it is difficult to experimentally decouple the effect of composition-dependent phase transition barriers from indirect effects related to the exfol…
Transition metal dichalcogenides (TMDs) are van der Waals layered materials with sizable and tunable bandgaps, offering promising platforms for two-dimensional electronics and optoelectronics. To this end, the bottleneck is how to acquire high-quality single crystals in a facile and efficient manner. As one of the most widely employed method of single-crystal growth, conventional chemical vapor transport (CVT) generally encountered problems including the excess nucleation that leads to small crystal clusters and slow growth rate. To address these issues, a seed crystal is introduced to suppres…
We present a microscopic study on higher excitonic states in transition metal dichalcogenides in the presence of disorder. We show that the geometric phase cancels the degeneration of 2s and 2p states and that a significant disorder-induced coupling of bright and dark states offers a strategy to circumvent optical selection rules. As a prove, we show a direct fingerprint of dark 2p states in absorption spectra of WS$_2$. The predicted softening of optical selection rules through exciton-disorder coupling is of general nature and therefore applicable to related two-dimensional semiconductors.
Gold-assisted mechanical exfoliation currently represents a promising method to separate ultra-large (cm-scale) transition metal dichalcogenides (TMDs) monolayers (1L) with excellent electronic and optical properties from the parent van der Waals (vdW) crystals. The strong interaction between $Au$ and chalcogen atoms is the key to achieve this nearly perfect 1L exfoliation yield. On the other hand, it may affect significantly the doping and strain of 1L TMDs in contact with Au. In this paper, we systematically investigated the morphology, strain, doping, and electrical properties of large area…
The capability to isolate one to few unit-cell thin layers from the bulk matrix of layered compounds opens fascinating prospects to engineer novel electronic phases. However, a comprehensive study of the thickness dependence and of potential extrinsic effects are paramount to harness the electronic properties of such atomic foils. One striking example is the charge density wave (CDW) transition temperature in layered dichalcogenides whose thickness dependence remains unclear in the ultrathin limit. Here we present a detailed study of the thickness and temperature dependences of the CDW in VSe$…
Developments in optoelectronics and spin-optronics based on transition metal dichalcogenide monolayers (MLs) need materials with efficient optical emission and well-defined transition energies. In as-exfoliated MoS2 MLs the photoluminescence (PL) spectra even at low temperature consists typically of broad, overlapping contributions from neutral, charged excitons (trions) and localized states. Here we show that in superacid treated MoS2 MLs the PL intensity increases by up to 60 times at room temperature. The neutral and charged exciton transitions are spectrally well separated in PL and reflec…
Common substitutional isovalent semiconductor alloys usually form disordered metastable phases with positive excess formation enthalpies (ΔH). In contrast, monolayer alloys of transition metal dichalcogenides (TMDs) MX2 (M = Mo, W; X = S, Se) always have negative ΔH, suggesting atomic ordering, which is, however, not yet experimentally observed. Using first-principles calculations, we find that the negative ΔH of cation-mixed TMD alloys results from the charge transfer from weak Mo-X to nearest strong W-X bonds and the negative ΔH of anion-mixed TMD alloys comes from the larger energy gain due…
Transition metal dichalcogenides (TMDCs) have emerged as a new two dimensional materials field since the monolayer and few-layer limits show different properties when compared to each other and to their respective bulk materials. For example, in some cases when the bulk material is exfoliated down to a monolayer, an indirect-to-direct band gap in the visible range is observed. The number of layers $N$ ($N$ even or odd) drives changes in space group symmetry that are reflected in the optical properties. The understanding of the space group symmetry as a function of the number of layers is there…
Light induced current in two-dimensional (2D) layered materials emerges from mechanisms such as photothermoelectric effect, photovoltaic effect or nonlocal hot carrier transport. Semiconducting layered transition metal dichalcogenides have been studied extensively in recent years as the generation of current by light is a crucial process in optoelectronic and photovoltaic devices. However, photocurrent generation is unexpected in metallic 2D layered materials unless a photothermal mechanism is prevalent. Typically, high thermal conductivity and low absorption of the visible spectrum prevent ph…
Liquid-phase exfoliation is one of the most promising routes for large scale production of multilayer graphene dispersions. These dispersions, which may be used in coatings, composites or paints, are believed to contain disorder-free graphene multilayers. Here we address the nature of defects in such samples obtained by liquid-phase exfoliation of graphite powder in N-methyl--2--pyrrolidone. Our Raman spectroscopy data challenges the assumption that these multilayers are free of bulk defects, revealing that defect localization strongly depends on the sonication time. For short ultrasound times…
Semiconducting transition metal dichalcogenides (TMDs) have emerged as materials that can be used to realize two-dimensional (2D) crystals possessing rather unique transport and optical properties. Most research has so far focused on sulfur and selenium compounds, while tellurium-based materials attracted little attention so far. As a first step in the investigation of Te-based semiconducting TMDs in this context, we have studied MoTe$_2$ crystals with thicknesses above 4 nm, focusing on surface transport and a quantitative determination of the gap structure. Using ionic-liquid gated transisto…
Despite its extremely weak intrinsic spin-orbit coupling (SOC), graphene has been shown to acquire considerable SOC by proximity coupling with exfoliated transition metal dichalcogenides (TMDs). Here we demonstrate strong induced Rashba SOC in graphene that is proximity coupled to a monolayer TMD film, MoS2 or WSe2, grown by chemical vapor deposition with drastically different Fermi level positions. Graphene/TMD heterostructures are fabricated with a pickup-transfer technique utilizing hexagonal boron nitride, which serves as a flat template to promote intimate contact and therefore a strong i…
The layer stacking order in 2D materials strongly affects functional properties and holds promise for next generation electronic devices. In bulk, octahedral MoTe$_2$ possesses two stacking arrangements, the Weyl semimetal T$_d$ phase, and the higher-order topological insulator 1T' phase; however, it remains unclear if thin exfoliated flakes of MoTe$_2$ follow the T$_d$, 1T', or an alternative stacking sequence. Here, we resolve this debate using atomic-resolution imaging within the transmission electron microscope. We find that the layer stacking in thin flakes of MoTe$_2$ is highly disordere…
We report a rectangular charge density wave (CDW) phase in strained 1T-VSe$_2$ thin films synthesized by molecular beam epitaxy on c-sapphire substrates. The observed CDW structure exhibits an unconventional rectangular 4a{\times}{\sqrt{3a}} periodicity, as opposed to the previously reported hexagonal $4a\times4a$ structure in bulk crystals and exfoliated thin layered samples. Tunneling spectroscopy shows a strong modulation of the local density of states of the same $4a\times\sqrt{3}a$ CDW periodicity and an energy gap of $2Δ_{CDW}=(9.1\pm0.1)$ meV. The CDW energy gap evolves into a full gap …
Understanding defect effect on carrier dynamics is essential for both fundamental physics and potential applications of transition metal dichalcogenides. Here, the phenomenon of oxygen impurities trapping photo-excited carriers has been studied with ultrafast pump-probe spectroscopy. Oxygen impurities are intentionally created in exfoliated multilayer MoSe2 with Ar+ plasma irradiation and air exposure. After plasma treatment, the signal of transient absorption first increases and then decreases, which is a signature of defect capturing carriers. With larger density of oxygen defects, the trapp…
The electronic properties of two-dimensional materials such as graphene are extremely sensitive to their environment, especially the underlying substrate. Planar van der Waals bonded substrates such as hexagonal boron nitride (hBN) have been shown to greatly improve the electrical performance of graphene devices by reducing topographic variations and charge fluctuations compared to amorphous insulating substrates}. Semiconducting transition metal dichalchogenides (TMDs) are another family of van der Waals bonded materials that have recently received interest as alternative substrates to hBN fo…
The monolayer WSe2 is interesting and important for future application in nanoelectronics, spintronics and valleytronics devices, because it has the largest spin splitting and longest valley coherence time among all the known monolayer transition-metal dichalcogenides (TMDs). To obtain the large-area monolayer TMDs' crystal is the first step to manufacture scalable and high-performance electronic devices. In this letter, we have successfully fabricated millimeter-sized monolayer WSe2 single crystals with very high quality, based on our improved mechanical exfoliation method. With such superior…
Transition metal dichalcogenides (TMDs) attract significant attention due to their exceptional optical and excitonic properties. It was understood already in the 1960s, and recently rediscovered, that many TMDs possess high refractive index and optical anisotropy, which make them attractive for nanophotonic applications. However, accurate analysis and predictions of nanooptical phenomena require knowledge of dielectric constants along both in- and out-of-plane directions and over a broad spectral range -- information, which is often inaccessible or incomplete. Here, we present an experimental …
We report on a possible optical tuning of the spin Hall conductivity in mono-layer transition metal dichalcogenides. Light beams of frequencies much higher than the energy scale of the system (the \textit{off-resonant} condition) does not excite electrons but rearranges the band structure. The rearrangement is quantitatively established using the Floquet formalism. For such a system of mono-layer transition metal dichalcogenides, the spin Hall conductivity (calculated with the Kubo expression in presence of disorder) exhibits a drop at higher frequencies and lower intensities. Finally, we comp…
We study the low temperature thermal conductivity of single-layer transition metal dichalcogenides. In the low temperature regime where heat is carried primarily through transport of electrons, thermal conductivity is linked to electrical conductivity through the Wiedemann-Franz law. Using a \textit{k.p} Hamiltonian that describes the $ K $ and $ K^{'} $ valley edges, we compute the zero-frequency electric (Drude) conductivity using the Kubo formula to obtain a numerical estimate for the thermal conductivity. The impurity scattering determined transit time of electrons which enters the Drude e…
Using density functional theory with added on-site interactions (DFT+U), we study the electronic structure of bulk, monolayer, and bilayer of the layered transition-metal dichalcogenide $1T-TaS_2$. We show that a two-dimensional spin--$\frac{1}{2}$ Mott-phase exists for the monolayer in the charge-density wave state (CDW) and that such a phase is systematically destroyed by packing of the distorted layers leading to a one dimensional metal for bulk, CDW-distorted TaS$_2$. The latter finding is in contrast with previous DMFT predictions --disagreement we explain by the weak effective interactio…
Intercalation of alkali atoms within the lamellar transition metal dichalcogenides is a possible route toward a new generation of batteries. It is also a way to induce structural phase transitions authorizing the realization of optical and electrical switches in this class of materials. The process of intercalation has been mostly studied in three-dimensional dichalcogenide films. Here, we address the case of a single-layer of molybdenum disulfide (MoS$_2$), deposited on a gold substrate, and intercalated with cesium (Cs) in ultra-clean conditions (ultrahigh vacuum). We show that intercalation…
The transition metal dichalcogenide 1T-TaS$_2$ is well known to harbor a rich variety of charge density wave (CDW) distortions which are correlated with underlying lattice atom modulations. The long range CDW phases extend throughout the whole crystal and terminate with charge displacements at the crystal boundaries. Here we report on the transport properties and capacitance characteristics of the interface between freshly exfoliated flakes of 1T-TaS$_2$ in intimate van der Waals contact with \textit{n}-type GaAs substrates. The extracted barrier parameters (ideality, barrier height and built-…
We report charged exciton (trion) formation dynamics in doped monolayer transition metal dichalcogenides (TMDs), specifically molybdenum diselenide (MoSe2), using resonant two-color pump-probe spectroscopy. When resonantly pumping the exciton transition, trions are generated on a picosecond timescale through exciton-electron interaction. As the pump energy is tuned from the high energy to low energy side of the inhomogeneously broadened exciton resonance, the trion formation time increases by ~ 50%. This feature can be explained by the existence of both localized and delocalized excitons in a …
The interplay of symmetry and quenched disorder leads to some of the most fundamentally interesting and technologically important properties of correlated materials. It also poses the most vexing of theoretical challenges. Nowhere is this more apparent than in the study of spin glasses. A spin glass is characterized by an ergodic landscape of states - an innumerable number of possibilities that are only weakly distinguished energetically, if at all. We show in the material Fe$_x$NbS$_2$, this landscape of states can be biased by coexisitng antiferromagnetic order. This process leads to a pheno…
We examine the full static non-linear optical response of uniaxially strained transition metal dichalcogenide monolayers doped with a finite carrier density in the conduction band, in the presence of disorder. We find that the customary shift current is suppressed, yet we identify a strong, valley-dependent non-reciprocal response, which we term a \textit{unidirectional valley-contrasting photo-current} (UVCP). This DC current originates from the combined effect of strain and Kramers symmetry breaking by trigonal warping, while the contributions due to individual valleys can be separated by in…
Here, we describe synthesis of TMD crystals using a two-step flux growth method that eliminates a major potential source of contamination. Detailed characterization of TMDs grown by this two-step method reveals charged and isovalent defects with densities an order of magnitude lower than in TMDs grown by a single-step flux technique. Initial temperature-dependent electrical transport measurements of monolayer WSe2 yield room-temperature hole mobility above 840 cm2/Vs and low-temperature disorder-limited mobility above 44,000 cm2/Vs. Electrical transport measurements of graphene-WSe2 heterostru…
Recent experimental progresses have demonstrated the great potential of electronic and excitonic moiré superlattices in transition metal dichalcogenides (TMDs) for quantum many-body simulations and quantum optics applications. Here we reveal that the moiré potential landscapes in the TMDs heterostructures have an electrostatic origin from the spontaneous charge transfer across the heterointerfaces dependent on the atomic registry. This allows engineering tunable multi-chromatic superlattices through the interference of moiré potentials from independently configurable heterointerfaces in multil…
Disorder-induced symmetry breaking in moiré bands of marginally twisted bilayer MoS$_2$
Monash University（蒙纳士大学）；University of Pennsylvania（宾夕法尼亚大学）；University of Antwerp（安特卫普大学）；John A. Paulson School of Engineering and Applied Sciences, Harvard University（哈佛大学约翰·A·保尔森工程与应用科学学院）；Nanyang Technological University Singapore（新加坡南洋理工大学）；Washington University（华盛顿大学）；Universidad Autónoma de Madrid（马德里自治大学）
The low concentration of proton donors in alkaline HER, subsequently leading to the extra water adsorption and dissociation steps, identifies the value of active sites (edge and basal sites) and crystal phases in lowering the extra activation barrier and/or optimizing the H* adsorption kinetics; in addition, the outstanding morphology-based features (surface area, thickness, defects, disorders and crystallinity) of layered molybdenum dichalcogenide families pinpoint the roles of active sites and phases for more interpretable and feasible structure-activity analysis. In this context, hydrotherm…
Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin devices. Here we review the electronic properties of semiconducting $MX_2$, where $M=$Mo or W and $X=$ S or Se. Based on of density functional theory calculations, which include the effect of spin-orbit interaction, we discuss the band structure of single-layer, bilayer and bulk compounds. The band structure of these compounds is highly sensitive to elastic …
Using time-resolved optical Kerr rotation, we measure the low temperature valley dynamics of resident electrons and holes in exfoliated WSe$_2$ monolayers as a systematic function of carrier density. In an effort to reconcile the many disparate timescales of carrier valley dynamics in monolayer semiconductors reported to date, we directly compare the doping-dependent valley relaxation in two electrostatically-gated WSe$_2$ monolayers having different dielectric environments. In a fully-encapsulated structure (hBN/WSe$_2$/hBN, where hBN is hexagonal boron nitride), valley relaxation is found to…
We study theoretically weak localization of excitons in atomically-thin transition metal dichalcogenides. The constructive interference of excitonic de Broglie waves on the trajectories forming closed loops results in a decrease of the exciton diffusion coefficient. We calculate the interference contribution to the diffusion coefficient for the experimentally relevant situation of exciton scattering by acoustic phonons and static disorder. For the acoustic phonon scattering, the quantum interference becomes more and more important with increasing the temperature. Our estimates show that the qu…
Layered transition metal dichalcogenide (TMD) materials, i.e. 1T-TiSe$_2$ and 2H-NbSe$_2$, harbor a second order charge density wave (CDW) transition where phonons play a key role for the periodic modulations of conduction electron densities and associated lattice distortions. We systematically study the transport and capacitance characteristics over a wide temperature range of Schottky barriers formed by intimately contacting freshly exfoliated flakes of 1T-TiSe$_2$ and 2H-NbSe$_2$ to \textit{n}-type GaAs semiconductor substrates. The extracted temperature-dependent parameters (zero-bias barr…
