In twisted transition metal dichalcogenides (tTMDs), atomic reconstruction gives rise to moiré domains with alternating ferroelectric polarization, whose domain size and overall electric dipole moment are tunable by an out-of-plane electric field. Previous transport measurements in Hall bar devices have successfully demonstrated the overall ferroelectric behavior of tTMDs from a collective ensemble of ferroelectric moiré domains. To locally probe a single ferroelectric moiré domain, we fabricate and study mesoscopic quantum transport via a gate-defined twisted molybdenum disulfide (tMoS2) quantum point contact (QPC). The local property of a single moiré domain is invulnerable to long-range disorder and twist-angle inhomogeneity, resulting in an unusually long conductance plateau with large electrical hysteresis. The comparison between local and global measurements confirms that antiferroelectricity can emerge from alternating polarization of individual ferroelectric domains. Using a QPC as a single charge sensor, we characterize the nature and time scale of different domain evolution mechanisms with single atomic dipole resolution. Our findings shed new light on the microscopic ferroelectric behavior and dynamics within a single tTMD moiré domain, paving the way toward more advanced ferroelectric quantum devices with tunable local Hamiltonian, such as ferroelectric tTMD quantum dots (QDs).
Van der Waals (vdW) materials have greatly expanded our design space of heterostructures by allowing individual layers to be stacked at non-equilibrium configurations, for example via control of the twist angle. Such heterostructures not only combine characteristics of the individual building blocks, but can also exhibit emergent physical properties absent in the parent compounds through interlayer interactions. Here we report on a new family of emergent, nanometer-thick, semiconductor 2D ferroelectrics, where the individual constituents are well-studied non-ferroelectric monolayer transition …
Traditional ferroelectrics undergo thermally-induced phase transitions whereby their structural symmetry increases. The associated higher-symmetry structure is dubbed {\em paraelectric}. Ferroelectric transition metal dichalcogenide bilayers have been recently shown to become paraelectric, but not much has been said of the atomistic configuration of such a phase. As discovered through numerical calculations that include molecular dynamics here, their paraelectricity can only be ascribed to a time average of ferroelectric phases with opposing intrinsic polarizations, whose switching requires ma…
Tuning exciton emission via ferroelectric polarization at a heterogeneous interface between a monolayer transition metal dichalcogenide and a perovskite oxide membrane
Recent magneto-transport experiments have provided compelling evidence for the presence of an energetically isolated threefold Q-valley degeneracy in few-layer transition metal dichalcogenides. We study the flavor SU(3) symmetry breaking when each Landau level triplet is one-third filled or empty and predict that a pure flavor nematic phase and a flavorless charge-density-wave phase will occur respectively below and above a critical magnetic field. Surprisingly, electrons carry flavor-dependent electric dipole moments even at zero magnetic field, rendering the nematics ferroelectric, allowing …
Persistent electrical polarized states are fundamentally important to the electric industry as they can be used in the non-volatile memory, the artificial neuromorphic network, and negative capacitors, making ultralow energy consumption electronic devises possible. With the recent development in low dimensional ferroelectric materials, emerging 2D out-of-plane ferroelectric materials like MoTe2 have great potential for future development. Despite previous phenomenological studies, the underlying microscopic origin of ferroelectricity is still missing. Here, using density functional theory and …
Using a multiscale computational approach, we probe the origin and evolution of ultraflatbands in moiré superlattices of twisted bilayer MoS$_2$, a prototypical transition metal dichalcogenide. Unlike twisted bilayer graphene, we find no unique magic angles in twisted bilayer MoS$_2$ for flatband formation. Ultraflatbands form at the valence band edge for twist angles ($θ$) close to 0$^\circ$ and at both the valence and conduction band edges for $θ$ close to 60$^\circ$, and have distinct origins. For$ θ$ close to 0$^\circ$, inhomogeneous hybridization in the reconstructed moiré superlattice is…
We developed a Landau type theory for the description of polar phenomena in low-dimensional transition metal dichalcogenides (TMDs), specifically exploring flexoelectric origin of the polarization induced by a spontaneous bending and by inversion symmetry breaking due to the interactions with substrate. We consider the appearance of the spontaneous out-of-plane polarization due to the flexoelectric coupling with the strain gradient of the spontaneous surface rippling and surface-induced piezoelectricity. Performed calculations proved that the out-of-plane spontaneous polarization, originated f…
Twisted bilayer transition metal dichalcogenides are ideal platforms to study flat-band phenomena. In this paper, we investigate flat-band plasmons in the hole-doped twisted bilayer MoS$_2$ (tb-MoS$_2$) by employing a full tight-binding model and the random phase approximation. When considering lattice relaxations in tb-MoS$_2$, the flat band is not separated from remote valence bands, which makes the contribution of interband transitions in transforming the plasmon dispersion and energy significantly different. In particular, low-damped and quasi-flat plasmons emerge if we only consider intra…
A major theoretical challenge of studying twisted transition metal dichalcogenide (TMD) bilayers is that the unit cell of such structures is very large and therefore difficult to address using first-principles methods. However, twisted TMD bilayers form moiré patterns, which consist of regions of commensurate stacking, either smoothly interpolated into one another or separated by sharp domain walls. In this paper, we study twisted TMD bilayers by studying the properties of the constituent commensurate structures. Using density functional theory (DFT), we compute band structures for commensurat…
In bilayers of semiconducting transition metal dichalcogenides, the twist angle between layers can be used to introduce a highly regular periodic potential modulation on a length scale that is large compared to the unit cell. In such structures, correlated states can emerge, in which excitons in the heterostructure are strongly localized to the potential minima due to exciton-exciton interactions. We explore the transition between Mott and extended exciton phases in terms of a moiré-Bose-Hubbard Hamiltonian. Hopping and on-site interaction parameters are obtained from a Wannier representation …
Fabricating van der Waals (vdW) bilayer heterostructures (BL-HS) by stacking the same or different two-dimensional (2D) layers, offers a unique physical system with rich electronic and optical properties. Twist-angle between component layers has emerged as a remarkable parameter that can control the period of lateral confinement, and nature of the exciton (Coulomb bound electron-hole pair) in reciprocal space thus creating exotic physical states including moiré excitons. In this review article, we focus on opto-electronic properties of excitons in transition metal dichalcogenide (TMD) semicond…
The twist angle in transition metal dichalcogenide (TMD) heterobilayers is a compelling degree of freedom that determines electron correlations and the period of lateral confinement of moiré excitons. Here we perform polarization-resolved second harmonic generation (SHG) spectroscopy of MoS2/WSe2 heterostructures. We demonstrate that by choosing suitable laser energies the twist angle between two monolayers can be measured directly on the assembled heterostructure. We show that the amplitude and polarization of the SHG signal from the heterostructure are determined by the twist angle between t…
We reveal by first-principles calculations that the interlayer binding in a twisted MoS2/MoTe2 heterobilayer decreases with increasing twist angle, due to the increase of the interlayer overlapping degree, a geometric quantity describing well the interlayer steric effect. The binding energy is found to be a Gaussian-like function of twist angle. The resistance to rotation, an analogue to the interlayer sliding barrier, can also be defined accordingly. In sharp contrast to the case of MoS2 homobilayer, here the energy band gap reduces with increasing twist angle. We find a remarkable interlayer…
Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semiconductor that is assembled using mono- or few- layer MoS2. These van der Waals heterostructures feature broken inversion symmetry, which, together with the asymmetry of atomic arrangement at the interface of two 2D crystals, enables ferroelectric domains with alternating out-of-plane polarisation arranged into a twist-controlled network. The latter can be moved by applying out-of-plane electrical fields, as visualized…
Moiré superlattices serve as a playground for emerging phenomena, such as localization of band states, superconductivity, and localization of excitons. These superlattices are large and are often modeled in the zero angle limit, which obscures the effect of finite twist angles. Here, by means of first-principles calculations we quantify the twist-angle dependence of the moiré potential in the MoS$_2$ homobilayer and identify the contributions from the constituent elements of the moiré potential. Furthermore, by considering the zero-angle limit configurations, we show that the moiré potential i…
The long wavelength moiré superlattices in twisted 2D structures have emerged as a highly tunable platform for strongly correlated electron physics. We study the moiré bands in twisted transition metal dichalcogenide homobilayers, focusing on WSe$_2$, at small twist angles using a combination of first principles density functional theory, continuum modeling, and Hartree-Fock approximation. We reveal the rich physics at small twist angles $θ<4^\circ$, and identify a particular magic angle at which the top valence moiré band achieves almost perfect flatness. In the vicinity of this magic angle, …
Layered van der Waals materials have risen as powerful platforms to artificially engineer correlated states of matter. Here we show the emergence of a multiferroic order in a twisted dichalcogenide bilayer superlattice at quarter-filling. We show that the competition between Coulomb interactions leads to the simultaneous emergence of ferrimagnetic and ferroelectric orders. We derive the magnetoelectric coupling for this system, which leads to a direct strong coupling between the charge and spin orders. We show that, due to intrinsic spin-orbit coupling effects, the electronic structure shows a…
We report the optoelectrical characterisation of Eshelby twisted Germanium sulfide (GeS) nanowires with first experimental observation of ferroelectric order at room temperature in GeS which is an otherwise centrosymmetric molecule. The chemical composition and structure of these nanowires were confirmed by various spectroscopic, microscopic and diffractive techniques. In addition, the nanowires were found to be stable over time. From the optoelectronic measurements we found that these p-type semiconducting GeS nanowires have up to two orders higher charge carrier mobility than GeS nanosheets …
Janus dichalcogenide multilayers provide a paradigmatic platform to engineer electronic phenomena dominated by spin-orbit coupling. Their unique spin-orbit effects stem from local mirror symmetry breaking in each layer, which induces a colossal Rashba spin-orbit effect in comparison with the conventional dichalcogenide counterparts. Here we put forward twisted dichalcogenide bilayers as a simple platform to realize spin-orbit correlated states. We demonstrate the emergence of flat bands featuring strong spin-momentum locking and the emergence of non-collinear symmetry broken states when intera…
We apply a multiscale modeling approach to study lattice reconstruction in marginally twisted bilayers of transition metal dichalcogenides (TMD). For this, we develop DFT-parametrized interpolation formulae for interlayer adhesion energies of MoSe$_2$, WSe$_2$, MoS$_2$, and WS$_2$, combine those with elasticity theory, and analyze the bilayer lattice relaxation into mesoscale domain structures. Paying particular attention to the inversion asymmetry of TMD monolayers, we show that 3R and 2H stacking domains, separated by a network of dislocations develop for twist angles $θ^{\circ}<θ^{\circ}_P\…
We show that moiré bands of twisted homobilayers can be topologically nontrivial, and illustrate the tendency by studying valence band states in $\pm K$ valleys of twisted bilayer transition metal dichalcogenides, in particular, bilayer MoTe$_2$. Because of the large spin-orbit splitting at the monolayer valence band maxima, the low energy valence states of the twisted bilayer MoTe$_2$ at $+K$ ($-K$) valley can be described using a two-band model with a layer-pseudospin magnetic field $\boldsymbolΔ(\boldsymbol{r})$ that has the moiré period. We show that $\boldsymbolΔ(\boldsymbol{r})$ has a to…
Superconducting cavity probes sliding ferroelectricity in small-angle twisted WSe$_2$
Tata Institute of Fundamental Research（塔塔基础研究所）；Université Grenoble Alpes, CNRS, Grenoble INP, Institut Néel（格勒诺布尔阿尔卑斯大学、法国国家科学研究中心、格勒诺布尔理工学院、内耳研究所）；Indian Institute of Science（印度科学学院）；National Institute for Materials Science（日本国立材料研究所）
Resonant absorption and linear photovoltaic effect in ferroelectric moiré heterostructures
Moscow Center for Advanced Studies（莫斯科高级研究中心）；Kotelnikov Institute of Radio-engineering and Electronics of the RAS（俄罗斯科学院科特利尼科夫无线电工程与电子研究所）；HSE University（国立高等经济学院）；Institute of Physics of DFRS of the RAS（俄罗斯科学院达吉斯坦共和国科学中心物理研究所）
Twisted van der Waals materials have become a paradigmatic platform to realize exotic correlated states of matter. Here, we show that a twisted dichalcogenide bilayer (WSe$_2$) encapsulated between a magnetic van der Waals material (CrBr$_3$) features flat bands with tunable valley and spin flavors. We demonstrate that, when electron-electron interactions are included, spin-ferromagnetic and valley-ferromagnetic states emerge in the flat bands, stemming from the interplay between correlations, intrinsic spin-orbit coupling and exchange proximity effects. We show that the specific symmetry brok…
Ultraflatbands that have been theoretically and experimentally detected in a bunch of van der Waals stacked materials showing some peculiar properties, for instance, highly localized electronic states and enhanced electron-electron interactions. In this Letter, using an accurate tight-binding model, we study the formation and evolution of ultraflatbands in transition metal dichalcogenides (TMDCs) under low rotation angles. We find that, unlike in twisted bilayer graphene, ultraflatbands exist in TMDCs for almost any small twist angles and their wave function becomes more localized when the rot…
Motivated by the recent experimental realization of twisted transition metal dichalcogenide bilayers, we study a simplified model driven by different forms of monochromatic light. As a concrete and representative example we use parameters that correspond to a twisted MoTe$_2$ homobilayer. First, we consider irradiation with circularly polarized light in free space and demonstrate that the corresponding Floquet Hamiltonian takes the same form as the static Hamiltonian, only with a constant overall shift in quasi-energy. This is in stark contrast to twisted bilayer graphene, where new terms are …
In moiré heterostructures, gate-tunable insulating phases driven by electronic correlations have been recently discovered. Here, we use transport measurements to characterize the gate-driven metal-insulator transitions and the metallic phase in twisted WSe$_2$ near half filling of the first moiré subband. We find that the metal-insulator transition as a function of both density and displacement field is continuous. At the metal-insulator boundary, the resistivity displays strange metal behaviour at low temperature with dissipation comparable to the Planckian limit. Further into the metallic ph…
The crystal structure of a material creates a periodic potential that electrons move through giving rise to the electronic band structure of the material. When two-dimensional materials are stacked, the twist angle between the layers becomes an additional degree freedom for the resulting heterostructure. As this angle changes, the electronic band structure is modified leading to the possibility of flat bands with localized states and enhanced electronic correlations. In transition metal dichalcogenides, flat bands have been theoretically predicted to occur for long moiré wavelengths over a ran…
Semiconducting ferroelectric materials with low energy polarisation switching offer a platform for next-generation electronics such as ferroelectric field-effect transistors. Ferroelectric domains at symmetry-broken interfaces of transition metal dichalcogenide films provide an opportunity to combine the potential of semiconducting ferroelectrics with the design flexibility of two-dimensional material devices. Here, local control of ferroelectric domains in a marginally twisted WS2 bilayer is demonstrated with a scanning tunneling microscope at room temperature, and their observed reversible e…
We present a comprehensive theoretical investigation of the photo-generated excitons in transition-metal dichalcogenide monolayers (TMD-ML's) by Laguerre-Gaussian beams, a celebrated kind of twisted lights (TL's) carrying quantized orbital angular momenta (OAM). We show that the photo-excitation of TL incident to a TMD-ML leads to the formation of spatially localized exciton wave packets, constituted by the superposition of finite-momentum exciton states determined by the intriguing interplay between the multiple degrees of freedom of the optical and excitonic subsystems. Consequently, the TL-…
