扭曲硫化锗纳米线的光电特性及本征铁电性的实验观察
Optoelectronic characterisation of twisted germanium sulfide nanowires with experimental observation of intrinsic ferroelectricity
摘要：
我们报告的光电特性的Eshelby扭曲的硫化锗（GeS）纳米线的铁电秩序在室温下的GeS，这是一个中心对称的分子的第一次实验观察。这些纳米线的化学组成和结构，证实了各种光谱，显微镜和衍射技术。此外，发现纳米线随时间稳定。从光电测量，我们发现，这些p型半导体GeS纳米线具有高达两个订单更高的载流子迁移率比GeS纳米片，并具有可持续的，强大的光开关性能。压电响应力显微镜显示了铁电材料的电滞回线和蝶形回线，证实了室温铁电性的存在。我们的观察表明，扭曲的GeS纳米线的特性可以用来制造高效的电传感器，光电探测器，数据存储器和柔性电子产品。
英文摘要：
We report the optoelectrical characterisation of Eshelby twisted Germanium sulfide (GeS) nanowires with first experimental observation of ferroelectric order at room temperature in GeS which is an otherwise centrosymmetric molecule. The chemical composition and structure of these nanowires were confirmed by various spectroscopic, microscopic and diffractive techniques. In addition, the nanowires were found to be stable over time. From the optoelectronic measurements we found that these p-type semiconducting GeS nanowires have up to two orders higher charge carrier mobility than GeS nanosheets and have sustainable, robust photo-switching property. The existence of room temperature ferroelectricity is confirmed by piezoresponse force microscopy which showed hysteresis and butterfly loop, characteristics of a ferroelectric material. Our observations reveal that the properties of twisted GeS nanowires can be harnessed in making efficient electric sensors, photodetectors, data memories and flexible electronics.
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