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arXiv 2404.03488cond-mat.mes-hallcond-mat.dis-nncond-mat.mtrl-scicond-mat.str-el
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过渡金属硫族化物单层中的电子输运、金属-绝缘体相变与Wigner结晶

Electronic transport, metal-insulator transition, and Wigner crystallization in transition metal dichalcogenide monolayers

Yi Huang, Sankar Das Sarma

AI总结:

本文基于有限温度Boltzmann理论分析单层TMDs的低温输运,揭示了金属相中线性电阻率源于Friedel振荡,并指出2D低密度MIT行为是无序效应与Wigner晶体物理复杂相互作用的结果。

摘要:

哥伦比亚大学和哈佛大学近期的两项电子输运实验报道了过渡金属硫族化物(TMD)WSe$_2$单层中创纪录的高迁移率和低沟道密度 [J. Pack 等,arXiv:2310.19782;A. Y. Joe 等,Phys. Rev. Lett. 132, 056303 (2024)]。哥伦比亚大学的样品在低密度下展现了二维(2D)金属-绝缘体相变(MIT),这是一个在无序不存在时理论上预期会形成Wigner晶体(WC)的区间。我们采用有限温度Boltzmann理论,考虑了实际的杂质散射,以理解单层TMDs的低温输运性质。我们分析了实验结果,重点关注金属相中的2D MIT行为以及温度和密度对迁移率和电阻率的影响。我们讨论了输运结果中非平庸的载流子密度依赖性。我们的分析阐明了金属相中随温度线性变化的电阻率,将其归因于与屏蔽带电杂质相关的Friedel振荡。此外,我们探讨了Coulomb无序是否可能通过量子Anderson局域化转变或经典逾渗转变导致MIT。我们对无序诱导的MIT临界密度的理论估计值虽然偏小,但与实验临界密度相差不到约2倍。我们考察了在低密度MoSe$_2$系统中实验观察到的WCs约10 K的异常高熔化温度,这比纯净系统的熔化温度高出一个数量级。这表明观察到的2D低密度MIT行为可能是无序效应与相互作用驱动的WC物理之间复杂相互作用的结果,为TMD单层中的低温输运现象提供了全面的理解。

英文摘要:

Two recent electronic transport experiments from Columbia University and Harvard University have reported record high mobility and low channel densities in transition metal dichalcogenide (TMD) WSe$_2$ monolayers [J. Pack, et al., arXiv:2310.19782; A. Y. Joe, et al., Phys. Rev. Lett. 132, 056303 (2024)]. A two-dimensional (2D) metal-insulator transition (MIT) is demonstrated in the Columbia sample at low densities, a regime where the formation of a Wigner crystal (WC) is theoretically anticipated in the absence of disorder. We employ the finite-temperature Boltzmann theory to understand the low-temperature transport properties of monolayer TMDs, taking into account realistic disorder scattering. We analyze the experimental results, focusing on the 2D MIT behavior and the influence of temperature and density on mobility and resistivity in the metallic phase. We provide a discussion of the nontrivial carrier density dependence of our transport results. Our analysis elucidates the linear-in-$T$ resistivity in the metallic phase, attributing it to Friedel oscillations associated with screened charged impurities. Furthermore, we explore whether Coulomb disorder could lead to the MIT through either a quantum Anderson localization transition or a classical percolation transition. Our theoretical estimates of the disorder-induced MIT critical densities, although smaller, are within a factor of ~2 of the experimental critical density. We examine the exceptionally high melting temperature ~10 K of WCs observed experimentally in the MoSe$_2$ systems at low density, an order of magnitude larger than the pristine melting temperature. This suggests that the observed 2D low-density MIT behavior is likely a result of the complex interplay between disorder effects and interaction-driven WC physics, offering a comprehensive understanding of the low-temperature transport phenomena in TMD monolayers.

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