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arXiv 1607.08293cond-mat.mtrl-sci
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热处理条件下硫与少层石墨烯的相互作用

Sulfur and few-layer graphene interaction under thermal treatments

C. Bautista-Flores, J. S. Arellano-Peraza, R. Y. Sato-Berrú, E. Camps, D. Mendoza

摘要:

在这项工作中,我们研究了硫限制在两个多层石墨烯薄膜之间的热处理下,通过电气和拉曼光谱表征。我们发现浸入纳米多孔阳极氧化铝模板中的硫在相变过程中的电学行为和差示扫描量热法之间存在一些相似之处,这表明硫在封闭条件下与自由状态相比具有不同的热行为。此外,将多层石墨烯在500 °C下暴露于硫蒸气以诱导化学反应。这种方法有效地在硫和多层石墨烯之间形成了共价键,并产生了电荷浓度约为2 × 10^13 cm^-2的p型掺杂。最后,基于第一性原理计算,我们推测存在一个新的二维结构的硫。

英文摘要:

In this work we study sulfur confined between two multilayer graphene films under thermal treatments by means of electrical and Raman spectroscopy characterization. We found some similarities between the electrical behavior and differential scanning calorimetry of sulfur immersed into nanoporous anodic alumina template during sulfur phase transitions, this suggests that sulfur has a different thermal behavior when it is in confining conditions compared to the free state. In addition, multilayer graphene was exposed to sulfur vapors at 500 °C to induce chemical reaction. This method effectively produced covalent bonding between sulfur and multilayer graphene and a p-type doping of about 2x10^13 cm^-2 in charge concentration. Finally, based on first principle calculations we speculate on the existence of a new bidimensional structure of sulfur.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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