碘基和硫基复合处理对GeSn表面的有效钝化
Combined Iodine- and Sulfur-based Treatments for an Effective Passivation of GeSn Surface
摘要：
GeSn合金是亚稳态半导体，已被提议作为硅集成短波和中波红外光子和传感平台的构建块。然而，利用这些半导体需要控制它们的外延和它们的表面化学，以减少阻碍光电子器件效率的非辐射复合。在这里，我们证明了结合硫和碘基处理产生有效的钝化Ge和Ge0.9Sn0.1表面。X射线光电子能谱和原位椭圆偏振光谱测量被用来研究表面稳定性的动力学和跟踪的再氧化机制。我们的分析表明，HI处理后氧化物的还原最大，而HF+（NH4）2S导致较低的再氧化速率。组合HI+（NH4）2S处理在空气暴露1小时内保持最低氧化物比率<10%，而在4小时后达到小于初始氧化物覆盖率的一半。这些结果突出了基于S和I的处理在稳定GeSn表面化学方面的潜力，从而实现了与材料和器件处理兼容的钝化方法。
英文摘要：
GeSn alloys are metastable semiconductors that have been proposed as building blocks for silicon-integrated short-wave and mid-wave infrared photonic and sensing platforms. Exploiting these semiconductors requires, however, the control of their epitaxy and their surface chemistry to reduce non-radiative recombination that hinders the efficiency of optoelectronic devices. Herein, we demonstrate that a combined sulfur- and iodine-based treatments yields effective passivation of Ge and Ge0.9Sn0.1 surfaces. X-ray photoemission spectroscopy and in situ spectroscopic ellipsometry measurements were used to investigate the dynamics of surface stability and track the reoxidation mechanisms. Our analysis shows that the largest reduction in oxide after HI treatment, while HF+(NH4)2S results in a lower re-oxidation rate. A combined HI+(NH4)2S treatment preserves the lowest oxide ratio <10 % up to 1 hour of air exposure, while less than half of the initial oxide coverage is reached after 4 hours. These results highlight the potential of S- and I-based treatments in stabilizing the GeSn surface chemistry thus enabling a passivation method that is compatible with materials and device processing.
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