与超薄Al$_2$O$_3$界面结合的AlGaAs/GeSn p-i-n二极管
AlGaAs/GeSn p-i-n diode interfaced with ultrathin Al$_2$O$_3$
AI总结：
本研究采用嫁接法制备带超薄Al₂O₃隧穿层的AlGaAs/GeSn p-i-n双异质结二极管，实现高导带势垒与低界面态，器件电学性能优异均匀，为高温电泵浦GeSn激光器等器件提供可行方案。
摘要：
本研究采用嫁接法制备并表征了Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n双异质结（DHS）二极管，用于增强型光电子应用。通过集成超薄Al$_2$O$_3$作为量子隧穿层并强化界面双侧钝化，我们获得的异质结在AlGaAs与GeSn之间具有高达1.186 eV的导带势垒，同时界面态密度较低。该二极管展现出优异且高均匀性的电学特性：在326个器件中，±2 V下的平均理想因子为1.47，平均整流比达2.95E10³，表明器件制备质量较高。包括电容-电压（C-V）和电流-电压（I-V）分布在内的综合电学表征证实，该二极管能够实现可靠的电限制和高效的载流子注入。这些特性使Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn DHS成为下一代电泵浦GeSn激光器的 promising候选器件，有望在更高温度下工作。本研究结果为各类GeSn基器件的进一步发展提供了可行路径。
英文摘要：
This study presents the fabrication and characterizations of an Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn p-i-n double heterostructure (DHS) diode following the grafting approach for enhanced optoelectronic applications. By integrating ultra-thin Al$_2$O$_3$ as a quantum tunneling layer and enhancing interfacial double-side passivation, we achieved a heterostructure with a substantial 1.186 eV conduction band barrier between AlGaAs and GeSn, along with a low interfacial density of states. The diode demonstrated impressive electrical characteristics with high uniformity, including a mean ideality factor of 1.47 and a mean rectification ratio of 2.95E103 at +/-2 V across 326 devices, indicating high-quality device fabrication. Comprehensive electrical characterizations, including C-V and I-V profiling, affirm the diode's capability to provide robust electrical confinement and efficient carrier injection. These properties make the Al$_{0.3}$Ga$_{0.7}$As/Ge$_{0.87}$Sn$_{0.13}$/GeSn DHS a promising candidate for next-generation electrically pumped GeSn lasers, potentially operable at higher temperatures. Our results provide a viable pathway for further advancements in various GeSn-based devices.
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