Hybrid devices based on spin-crossover (SCO)/2D heterostructures grant a highly sensitive platform to detect the spin transition in the molecular SCO component and tune the properties of the 2D material. However, the fragility of the SCO materials upon thermal treatment, light irradiation or contact with surfaces and the methodologies used for their processing have limited their applicability. Here, we report an easily processable and robust SCO/2D hybrid device with outstanding performance based on the sublimable SCO [Fe(Pyrz)2] molecule deposited over CVD-graphene, which is fully compatible with electronics industry protocols. Thus, a novel methodology based on growing an elusive polymorph of [Fe(Pyrz)2] (tetragonal phase) over graphene is developed that allows us to electrically detect a fast and effective light-induced spin transition in the devices (~50% yield in 5 minutes). Such performance can be enhanced even more when a flexible polymeric layer of PMMA is inserted in between the two active components in a contactless configuration, reaching a ~100 % yield in 5 minutes.
Electron-beam-induced Contactless Manipulation of Interlayer Twist in van der Waals Heterostructures
Polytechnic University of Turin（都灵理工大学）；Empa, Swiss Federal Laboratories for Materials Science and Technology（瑞士联邦材料科学与技术研究所）；Italian Institute of Technology（意大利理工学院）；University of Cagliari（卡利亚里大学）
Crossover between intrinsic and temperature-assisted regimes in spin-orbit torque switching of antiferromagnetic order
The University of Tokyo（东京大学）；The Johns Hopkins University（约翰斯·霍普金斯大学）；Japan Science and Technology Agency（日本科学技术振兴机构）；Institute for Solid State Physics, The University of Tokyo（东京大学固体物理研究所）；Osaka University（大阪大学）；RIKEN（理化学研究所）；Trans-scale Quantum Science Institute, The University of Tokyo（东京大学跨尺度量子科学研究所）；Canadian Institute for Advanced Research（加拿大高级研究院）
Electrical tuning of the spin-orbit interaction in nanowire by transparent ZnO gate grown by atomic layer deposition
我们开发了一种InAs纳米线栅全包围场效应晶体管，使用透明导电氧化锌（ZnO）栅电极，这是在原位原子层生长后的Al 2 O 3的栅极绝缘体。我们进行了磁输运测量，发现从弱局域化到弱反局域化的交叉与增加栅极电压的影响，这表明Rashba自旋轨道耦合是由栅极电极调谐。的自旋轨道相互作用的栅极调谐的效率是高于那些获得的二维电子气，和高的栅极全周围的纳米线金属氧化物半导体场效应晶体管，这是以前报道的。本文讨论了自旋-轨道相互作用，不仅采用了传统的一维模型，而且采用了最近提出的考虑材料微观能带结构影响的模型。
