arXivDaily arXiv每日学术速递 周一至周五更新
arXiv 1606.03017cond-mat.mtrl-sci
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MoS $_2$的振动和光学性质:从单层到块体

Vibrational and optical properties of MoS$_2$: from monolayer to bulk

Alejandro Molina-Sánchez, Kerstin Hummer, Ludger Wirtz

摘要:

二硫化钼,MoS2,最近作为一种层状材料获得了相当大的关注,其中相邻层之间的相互作用很弱,并且可以很容易地相互滑动。因此,机械剥离允许制造单层和多层,并打开了产生具有优异性能的原子级薄晶体的可能性。与石墨烯相比,它的光学带隙为1.9 eV。这使其成为晶体管和光电应用的突出候选者。单层MoS $_2$由于不存在层间杂化而表现出与本体MoS $_2$显著不同的物理性质。例如,虽然块体和多层MoS $_2$的带隙是间接的,但随着层数的减少,它变得直接。在这篇综述中,我们从理论的角度分析了单层,少层和散装MoS $_2$的电子,光学和振动特性。特别是,我们专注于自旋轨道相互作用,层数,和施加的拉伸应变的振动和光学性质的影响。我们研究不同的方法,主要是从头算方法所获得的结果。我们还讨论了哪些近似是适用于MoS $_2$和层状材料。研究了外应变对单层MoS $_2$带隙的影响以及间接带隙向直接带隙的过渡。我们分析了激子效应对吸收光谱的影响。给出了其主要特征,如吸收阈值处的双峰和高能激子。此外,我们报告的声子色散关系的单层,少层和体的MOS $_2$。基于后者,我们解释的拉曼活性$A_{1g}$和$E^1_{2g}$模式的行为作为层数的函数。

英文摘要:

Molybdenum disulfide, MoS2, has recently gained considerable attention as a layered material where neighboring layers are only weakly interacting and can easily slide against each other. Therefore, mechanical exfoliation allows the fabrication of single and multi-layers and opens the possibility to generate atomically thin crystals with outstanding properties. In contrast to graphene, it has an optical gap of 1.9 eV. This makes it a prominent candidate for transistor and opto-electronic applications. Single-layer MoS$_2$ exhibits remarkably different physical properties compared to bulk MoS$_2$ due to the absence of interlayer hybridization. For instance, while the band gap of bulk and multi-layer MoS$_2$ is indirect, it becomes direct with decreasing number of layers. In this review, we analyze from a theoretical point of view the electronic, optical, and vibrational properties of single-layer, few-layer and bulk MoS$_2$. In particular, we focus on the effects of spin-orbit interaction, number of layers, and applied tensile strain on the vibrational and optical properties. We examine the results obtained by different methodologies, mainly ab initio approaches. We also discuss which approximations are suitable for MoS$_2$ and layered materials. The effect of external strain on the band gap of single-layer MoS$_2$ and the crossover from indirect to direct band gap is investigated. We analyze the excitonic effects on the absorption spectra. The main features, such as the double peak at the absorption threshold and the high-energy exciton are presented. Furthermore, we report on the phonon dispersion relations of single-layer, few-layer and bulk MoS$_2$. Based on the latter, we explain the behavior of the Raman-active $A_{1g}$ and $E^1_{2g}$ modes as a function of the number of layers.

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