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arXiv 1604.04865cond-mat.mtrl-sci
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MoS2多晶纳米片的热导率

Thermal conductivity of MoS2 polycrystalline nanosheets

M. Sledzinska, B. Graczykowski, M. Placidi, D. Saleta Reig, A. El Sachat, J. S. Reparaz, F. Alzina, S. Roche, B. Mortazavi, R. Quey, C. M. Sotomayor Torres

摘要:

我们报告了一种用于将大面积的CVD生长的少层MoS 2从原始衬底转移到另一个任意衬底和多孔衬底上的技术,以获得独立的结构。该方法包括无聚合物和残留物,表面张力辅助湿转移,其中我们利用了MoS 2的疏水特性。与广泛使用的PMMA介导的转移相比,该方法产生质量更好的转移层,具有更少的裂纹和缺陷,以及更少的污染,并且允许制造直径高达100微米的少层、无支撑结构。我们报告的热导率测量通过非接触式拉曼测温对如此制作的样品。测量结果显示,面内热导率大幅降低至0.5 W/mK。使用有限元方法模拟多晶膜的结果进行解释。

英文摘要:

We report a technique for transferring large areas of the CVD-grown, few-layer MoS2 from the original substrate to another arbitrary substrate and onto holey substrates, in order to obtain free-standing structures. The method consists of a polymer- and residue-free, surface-tension-assisted wet transfer, in which we take advantage of the hydrophobic properties of the MoS2. The methods yields better quality transferred layers, with fewer cracks and defects, and less contamination than the widely used PMMA-mediated transfer and allows fabrication of few-layer, fee-standing structures with diameters up to 100 micro-m. We report thermal conductivity measurements by means of contactless Raman thermometry on the so-fabricated samples. The measurements revealed a strong reduction in the in-plane thermal conductivity down to 0.5 W/mK. The results are explained using finite elements method simulations for a polycrystalline film.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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