arXivDaily arXiv每日学术速递 周一至周五更新
arXiv周末暂无论文更新,休息一下吧,周末愉快~~
arXiv 1602.08799cond-mat.mes-hallcs.ET
收藏

电压控制互补Skyrmion轨道存储器

Complementary Skyrmion Racetrack Memory with Voltage Manipulation

Wang Kang, Chentian Zheng, Yangqi Huang, Xichao Zhang, Yan Zhou, Weifeng Lv, Weisheng Zhao

摘要:

磁skyrmion具有拓扑稳定、体积小、驱动电流小等优点,有望成为下一代存储器和逻辑器件的信息载体,其最有潜力的应用之一是设计跑道存储器(RM),称为Sk-RM,以取代传统的畴壁存储器(DW)。然而,目前的研究面临着一些关键的设计挑战,例如,skyrmion操纵,数据表示和同步等。为了解决这些挑战,我们在这里提出了一个互补的Sk-RM结构与电压操纵。所提出的设计的功能和性能进行了研究与微磁模拟。

英文摘要:

Magnetic skyrmion holds promise as information carriers in the next-generation memory and logic devices, owing to the topological stability, small size and extremely low current needed to drive it. One of the most potential applications of skyrmion is to design racetrack memory (RM), named Sk-RM, instead of utilizing domain wall (DW). However, current studies face some key design challenges, e.g., skyrmion manipulation, data representation and synchronization etc. To address these challenges, we propose here a complementary Sk-RM structure with voltage manipulation. Functionality and performance of the proposed design are investigated with micromagnetic simulations.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

↑