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arXiv 1509.06342cond-mat.str-el
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Sr $_2$ IrO $_4$的晶体生长和内禀磁性

Crystal growth and intrinsic magnetic behavior of Sr$_2$IrO$_4$

N. H. Sung, H. Gretarsson, D. Proepper, J. Porras, M. Le Tacon, A. V. Boris, B. Keimer, B. J. Kim

摘要:

我们报告的化学计量的Sr $_2$ IrO $_4$单晶的生长,这使我们能够揭示其内在的磁性。本文研究了助熔剂法生长晶体时不同生长条件的影响。我们发现,磁响应非常敏感地依赖于生长条件的细节。我们评估的缺陷浓度的基础上磁化,X射线衍射,拉曼散射,和光学电导率测量。我们发现,具有低浓度的电子活性缺陷的样品显示出大大减少的间隙光谱重量的光学电导率和明显的两个磁振子峰的拉曼散射光谱。在生长过程中长时间暴露在高温下导致更高的缺陷浓度,这可能是由于氧空位的产生。通过改变生长温度,我们进一步证明了Sr $_2$ IrO $_4$和Sr $_3$ Ir $_2$ O $_7$相的系统共生。因此,我们的研究结果强调,揭示内禀磁性的Sr $_2$ IrO $_4$和相关材料需要严格控制的晶体生长过程。

英文摘要:

We report on the growth of stoichiometric Sr$_2$IrO$_4$ single crystals, which allow us to unveil their intrinsic magnetic properties. The effect of different growth conditions has been investigated for crystals grown by the flux method. We find that the magnetic response depends very sensitively on the details of the growth conditions. We assess the defect concentration based on magnetization, X-ray diffraction, Raman scattering, and optical conductivity measurements. We find that samples with a low concentration of electronically active defects show much reduced in-gap spectral weight in the optical conductivity and a pronounced two-magnon peak in the Raman scattering spectrum. A prolonged exposure at high temperature during the growth leads to higher defect concentration likely due to creation of oxygen vacancies. We further demonstrate a systematic intergrowth of Sr$_2$IrO$_4$ and Sr$_3$Ir$_2$O$_7$ phases by varying the growth temperature. Our results thus emphasize that revealing the intrinsic magnetic properties of Sr$_2$IrO$_4$ and related materials requires a scrupulous control of the crystal growth process.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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