Monte Carlo simulation of a 2+1 dimensional model of voltage-biased bilayer graphene, consisting of relativistic fermions with chemical potential mu coupled to charged excitations with opposite sign on each layer, has exposed non-canonical scaling of bulk observables near a quantum critical point found at strong coupling. We present a calculation of the quasiparticle dispersion relation E(k) as a function of exciton source j in the same system, employing partially twisted boundary conditions to boost the number of available momentum modes. The Fermi momentum k_F and superfluid gap Delta are extracted in the limit j tends to zero for three different values of mu, and support a strongly interacting scenario at the Fermi surface with Delta of order O(mu). We propose an explanation for the observation mu < k_F in terms of a dynamical critical exponent z < 1.
We study the localized magnetic states of impurity in biased bilayer and trilayer graphene. It is found that the magnetic boundary for bilayer and trilayer graphene presents the mixing features of Dirac and conventional fermion. For zero gate bias, as the impurity energy approaches the Dirac point, the impurity magnetization region diminishes for bilayer and trilayer graphene. When a gate bias is applied, the dependence of impurity magnetic states on the impurity energy exhibits a different behavior for bilayer and trilayer graphene due to the opening of a gap between the valence and the condu…
We compute the phase diagram of a biased graphene bilayer. The existence of a ferromagnetic phase is discussed with respect both to carrier density and temperature. We find that the ferromagnetic transition is first order, lowering the value of $U$ relatively to the usual Stoner criterion. We show that in the ferromagnetic phase the two planes have unequal magnetization and that the electronic density is hole like in one plane and electron like in the other.
We discuss the quantum Hall effect of bilayer graphene with finite gate voltage where the Fermi energy exceeds the interlayer hopping energy. We calculated magnetic susceptibility, diagonal and off-diagonal conductivities in finite-magnetic-field formalism, and observed crossover of integer quantum Hall effect from two independent monolayer type system to strongly coupled bilayer systems by changing the ratio of interlayer hopping energy and the gate voltage. We also discuss the case of multilayer systems with Bernal stacking
The phase diagram of a biased graphene bilayer is computed and the existence of a ferromagnetic phase is discussed both in the critical on-site interaction $U_{c}$ versus doping density and versus temperature. We show that in the ferromagnetic phase the two planes have unequal magnetization and that the electronic density is hole like in one plane and electron like in the other. We give evidence for a \emph{first-order} phase transition between paramagnetic and ferromagnetic phases induced by doping at zero temperature.
We study magnetism of an adatom adsorbed on AA-stacked bilayer graphene (BLG) in both unbiased and biased cases, using the Anderson impurity model. We find different magnetic phase diagrams for the adatom, depending on the energy level of the adatom, which varies from the magnetic phase diagram of adatom in normal metals to that in graphene. This is due to the individual energy dependence of the density of states (DOS) of AA-stacked BLG and anomalous broadening of the adatom energy level. Furthermore we investigate the effect of a bias voltage on DOS of AA-stacked and show that the magnetizati…
We address the optical conductivity of undoped bilayer graphene in the presence of a finite bias voltage at finite temperature. The effects of gap parameter and stacking type on optical conductivity are discussed in the context of tight binding model Hamiltonian. Green's function approach has been implemented to find the behavior of optical conductivity of bilayer graphene within linear response theory. We have found the frequency dependence of optical conductivity for different values of gap parameter and bias voltage. Also the dependence of optical conductivity on the temperature has been in…
Electronically gated bilayer graphene behaves as a tunable gap semiconductor under a uniform interlayer bias $V_{g}$. Imposing a spatially varying bias, which changes polarity from $-V_g$ to $+V_g$, leads to one dimensional (1D) chiral modes localized along the domain wall of the bias. Due to the broad transverse spread of their low-energy wavefunctions, we find that the dominant interaction between these 1D electrons is the forward scattering part of the Coulomb repulsion. Incorporating these interactions and the gate voltage dependence of the dispersion and wavefunctions, we find that these …
We consider bilayer quantum Hall systems at total filling factor $ν=1$ in presence of a bias voltage $Δ_v$ which leads to different filling factors in each layer. We use auxiliary field functional integral approach to study mean-field solutions and collective excitations around them. We find that at large layer separation, the collective excitations soften at a finite wave vector leading to the collapse of quasiparticle gap. Our calculations predict that as the bias voltage is increased, bilayer systems undergo a phase transition from a compressible state to a $ν=1$ phase-coherent state {\it w…
We study, within the tight-binding approximation, the electronic properties of a graphene bilayer in the presence of an external electric field applied perpendicular to the system -- \emph{biased bilayer}. The effect of the perpendicular electric field is included through a parallel plate capacitor model, with screening correction at the Hartree level. The full tight-binding description is compared with its 4-band and 2-band continuum approximations, and the 4-band model is shown to be always a suitable approximation for the conditions realized in experiments. The model is applied to real bias…
We establish the nonequilibrium thermal phases of a voltage driven antiferromagnetic Mott insulator in three dimensions, realised at steady state under a voltage bias. Starting from the Keldysh action for the half filled Hubbard model we derive an effective Langevin equation for the `slow' magnetic variables. The coupling of electrons to these degrees of freedom determine the transport properties. At low temperature we find a voltage-driven discontinuous insulator-metal transition, along with hysteresis. We map the suppression of the Néel temperature $T_N$ and pseudogap temperature $T_{pg}$ wi…
We demonstrate that the electronic gap of a graphene bilayer can be controlled externally by applying a gate bias. From the magneto-transport data (Shubnikov-de Haas measurements of the cyclotron mass), and using a tight binding model, we extract the value of the gap as a function of the electronic density. We show that the gap can be changed from zero to mid-infrared energies to a value as large as 0.3 eV by using fields of < 1 V/nm, below the electric breakdown of SiO2. The opening of a gap is clearly seen in the quantum Hall regime.
We study the electronic properties of AA-stacked bilayer graphene in a transverse electric field. The strong on-site Coulomb repulsion stabilizes the antiferromagnetic order in such a system. The antiferromagnetic order is suppressed by the transverse bias voltage, at least partially. The inter-plane Coulomb repulsion and non-zero voltage stabilize an exciton order parameter. The exciton order parameter coexists with the antiferromagnetism and can be as large as several tens of meV for realistic values of the bias voltage and interaction constants. The application of a transverse bias voltage …
Excitonic bound states are characterised by a binding energy $ε_b$ and a single-particle band gap $Δ_b$. This work provides a theoretical description for both strong ($ε_b\simΔ_b$) and weak ($ε_b\llΔ_b$) excitonic bound states, with particular application to biased bilayer graphene. Standard description of excitons is based on a wave function that is determined by a Schrödinger-like equation with screened attractive potential. The wave function approach is valid only in the weak binding regime $ε_b\llΔ_b$. The screening depends on frequency (dynamical screening) and this implies retardation. I…
We consider suspened bilayer graphene under applied perpendicular electric bias field that is known to generate a single particle gap $2Δ$ and a related electric polarization ${\cal P}$. We argue that the bias also drives a quantum phase transition from band insulator to superfluid exciton condensate. The transition occurs when the exciton binding energy exceeds the band gap $2Δ$. We predict the critical bias (converted to band gap), $Δ_c\approx 60$ meV, below which the excitons condense. The critical temperature, $T_c(Δ)$, is maximum at $Δ\approx 25$ meV, $T_c^\text{max}\approx 115$ K, decrea…
We formulate a model of N_f=4 flavors of relativistic fermion in 2+1d in the presence of a chemical potential mu coupled to two flavor doublets with opposite sign, akin to isopsin chemical potential in QCD. This is argued to be an effective theory for low energy electronic excitations in bilayer graphene, in which an applied voltage between the layers ensures equal populations of particles on one layer and holes on the other. The model is then reformulated on a spacetime lattice using staggered fermions, and in the absence of a sign problem, simulated using an orthodox hybrid Monte Carlo algor…
Bilayer quantum Hall states support a flow of nearly dissipationless staggered current which can only decay through collective channels. We study the dominant finite-temperature dissipation mechanism which in narrow bars is driven by thermal nucleation of pseudospin solitons. We find the finite-temperature resistivity, predict the resulting staggered current-voltage characteristics, and calculate the associated zero-temperature critical staggered current and gate voltage.
Magneto-transport and drag measurements on a quasi-Corbino 2D electron bilayer at the systems total filling factor 1 (v_tot=1) reveal a drag voltage that is equal in magnitude to the drive voltage as soon as the two layers begin to form the expected v_tot=1 exciton condensate. The identity of both voltages remains present even at elevated temperatures of 0.25 K. The conductance in the current carrying layer vanishes only in the limit of strong coupling between the two layers and at T->0 K which suggests the presence of an excitonic circular current.
Magnetic state of exchanged biased CoO(20nm)/Co($d_F$) bilayer ($d_F$=5-20nm) was studied by means of polarized neutron reflectometry. By spacing of CoO/Co bilayer and Al$_2$O$_3$ substrate with Nb(20nm) layer we created waveguide structure which allowed us to significantly enhance intensity of spin-flip (SF) scattering in the position of optical resonances. For the trained sample with thinnest Co(5nm) we detected strong SF scattering at the resonance position (up to 30\% of incoming intensity) speaking about high non-collinearity of the system. As $d_F$ increases, the intensity of SF scatteri…
Exciton instability in graphene bilayer systems is studied in the case of a short-ranged Coulomb interaction and a finite voltage difference between the layers. Self-consistent exciton gap equations are derived and solved numerically and analytically under controlled approximation. We obtain that a critical strength of the Coulomb interaction exists for the formation of excitons. The critical strength depends on the amount of voltage difference between the layers and on the inter-layer hopping parameter.
Using a four-band Hamiltonian, we study the phase boundary of spin-polarized-current state (SPCS) of interacting electrons in bilayer graphene. The model of spin-polarized-current state has previously been shown to resolve a number of experimental puzzles in bilayer graphene. The phase boundaries of the SPCS with and without the external voltage between the two layers are obtained in this work. An unusual phase boundary where there are two transition temperatures for a given carrier concentration is found at finite external voltage. The physics of this phenomenon is explained.
We study the gate voltage induced gap that occurs in graphene bilayers using \textit{ab initio} density functional theory. Our calculations confirm the qualitative picture suggested by phenomenological tight-binding and continuum models. We discuss enhanced screening of the external interlayer potential at small gate voltages, which is more pronounced in the \textit{ab initio} calculations, and quantify the role of crystalline inhomogeneity using a tight-binding model self-consistent Hartree calculation.
We have investigated exchange bias effects in bilayers composed by the antiferromagnetic o-YMnO$_3$ and ferromagnetic Co thin film by means of SQUID magnetometry, magnetoresistance, anisotropic magnetoresistance and planar Hall effect. The magnetization and magnetotransport properties show pronounced asymmetries in the field and magnetization axes of the field hysteresis loops. Both exchange bias parameters, the exchange bias field $H_{E}(T)$ as well as the magnetization shift $M_E(T)$, vanish around the Néel temperature $T_N \simeq 45$ K. We show that the magnetization shift $M_E(T)$ is also …
We theoretically study the effects of electron-electron interaction in twisted bilayer graphene in applied transverse dc electric field. When the twist angle is not very small, the electronic spectrum of the bilayer consists of four Dirac cones inherited from each graphene layer. Applied bias voltage leads to the appearance of two hole-like and two electron-like Fermi surface sheets with perfect nesting among electron and hole components. Such a band structure is unstable with respect to exciton band gap opening due to the screened Coulomb interaction. The exciton order parameter is accompanie…
We study the Josephson coupling of superconducting (SC) islands through the surface of single-layer (SLG) and bilayer (BLG) graphene, as a function of distance between the grains, temperature, chemical potential and external (transverse) gate-voltage. For SLG, we provide a comparison with existing literature. The proximity effect is analyzed through a Matsubara Green function approach. This represents the first step in a discussion of the conditions for the onset of a granular superconductivity within the film, made possible by Josephson currents flowing between superconductors. To ensure phas…
Infrared photoresistance as a sensitive probe of electronic transport in twisted bilayer graphene
University of Regensburg（雷根斯堡大学）；ICFO - Institut de Ciencies Fotoniques, The Barcelona Institute of Science and Technology（ICFO-光子科学研究所，巴塞罗那科技研究院）；Ludwig-Maximilians-Universität（慕尼黑大学）；National Institute for Materials Science（国立材料研究所）；Munich Center for Quantum Science and Technology (MCQST)（慕尼黑量子科学与技术中心）；Institute of High Pressure Physics, Polish Academy of Sciences（波兰科学院高压物理研究所）
