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arXiv 1507.04048cond-mat.mtrl-sci
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SiO2/Si基片上WSe2纳米片的热氧化

Thermal Oxidation of WSe2 Nano-sheets Adhered on SiO2/Si Substrates

Yingnan Liu, Cheng Tan, Harry Chou, Avinash Nayak, Di Wu, Rudresh Ghosh, Hsiao- Yu Chang, Yufeng Hao, Xiaohan Wang, Joon-Seok Kim, Richard Piner, Rodney S. Ruof… 展开作者

Yingnan Liu, Cheng Tan, Harry Chou, Avinash Nayak, Di Wu, Rudresh Ghosh, Hsiao- Yu Chang, Yufeng Hao, Xiaohan Wang, Joon-Seok Kim, Richard Piner, Rodney S. Ruoff, Deji Akinwande, Keji Lai

摘要:

由于层内与层间结合强度的显著不同,二维(2D)材料的机械、热和电性质在面内和面外方向之间是高度各向异性的。结构各向异性也可以在化学反应中起作用,例如氧化、还原和蚀刻。在这里,组成,结构和电学性能的机械剥离的WSe 2纳米片的SiO2/Si基板上的热氧化程度的函数进行了研究。如光学和拉曼数据所示,氧化的主要成分从纳米片边缘开始并向中心横向传播。部分氧化也发生在某些地区的薄片,这是由微波阻抗显微镜显示为高导电性的表面。使用二次离子质谱,我们还观察到广泛的氧化在WSe 2/SiO2界面。因此,多种显微方法的组合可以提供关于2D材料上化学反应的空间演变和反应产物的纳米级电学性质的重要信息。

英文摘要:

Due to the drastically different intralayer versus interlayer bonding strengths, the mechanical, thermal, and electrical properties of two-dimensional (2D) materials are highly anisotropic between the in-plane and out-of-plane directions. The structural anisotropy may also play a role in chemical reactions, such as oxidation, reduction, and etching. Here, the composition, structure, and electrical properties of mechanically exfoliated WSe2 nano- sheets on SiO2/Si substrates were studied as a function of the extent of thermal oxidation. A major component of the oxidation, as indicated from optical and Raman data, starts from the nano-sheet edges and propagates laterally towards the center. Partial oxidation also occurs in certain areas at the surface of the flakes, which are shown to be highly conductive by microwave impedance microscopy. Using secondary ion mass spectroscopy, we also observed extensive oxidation at the WSe2/SiO2 interface. The combination of multiple microcopy methods can thus provide vital information on the spatial evolution of chemical reactions on 2D materials and the nanoscale electrical properties of the reaction products.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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