发表机构
The Institute of Science Tokyo; Center for Physical Sciences and Technology (FTMC); Swinburne University of Technology; Melbourne Centre for Nanofabrication (MCN); Vilnius University; Institute of Innovative Research, Institute of Science Tokyo（东京科学大学; 物理与技术中心; 斯威本科技大学; 墨尔本纳米制造中心; 维尔纽斯大学; 东京科学大学创新研究院）
机构由 AI 辅助整理，请以论文原文为准。AI 中文总结
本研究通过飞秒激光、高温退火和微波退火三种方法氧化钽纳米薄膜，发现微波退火效率高且可通过腔体谐振变化实时监测氧化过程。
AI 中文摘要
通过三种途径对200纳米厚的钽薄膜进行了氧化和烧蚀实验：（i）飞秒（fs-）激光直写，（ii）在管式炉中进行高温退火（HTA），以及（iii）在2.45 GHz微波腔中进行退火。在炉中600°C下，将200纳米厚的Ta层完全转化为409纳米厚的Ta2O5需要一小时，但在约50瓦的微波功率下仅需几分钟。飞秒激光（515纳米/200飞秒）对钽纳米薄膜的氧化在平均单脉冲通量约0.1焦耳/平方厘米时开始发生，此时脉冲间存在强重叠（每个焦斑900个脉冲），即处于一个上界为烧蚀起始的狭窄窗口内。在微波退火过程中，腔体谐振频率和品质因数Q在金属到氧化物转变时均发生显著变化，反映了在2.45 GHz下介电常数实部和虚部的急剧下降。这种介电对比度使腔体成为传感器：氧化过程可通过腔体谐振的偏移实时跟踪，提供了一种非侵入性的原位诊断工具。
英文摘要
Oxidation and ablation of 200 nm tantalum films were carried out by three routes: (i) femtosecond (fs-)laser direct write, (ii) high-temperature annealing (HTA) in a tube furnace, and (iii) annealing in a 2.45 GHz microwave cavity. Complete conversion of the 200 nm Ta layer into 409 nm of Ta2O5 required one hour at 600 C in the furnace, but only minutes at ~ 50 W of microwave power. Fs-laser (515 nm/200 fs) oxidation of the Ta nano-film set in at an average single-pulse fluence of ~ 0.1 J/cm2 under strong pulse-to-pulse overlap (900 pulses per focal spot), i.e. within a narrow window bounded from above by the onset of ablation. Under microwave annealing, both the cavity resonance frequency and the quality factor Q changed markedly at the metal-to-oxide transition, reflecting the collapse of the real and imaginary parts of the permittivity at 2.45 GHz. This dielectric contrast turns the cavity into a sensor: the oxidation can be followed in real time from the shift of the cavity resonance, providing a non-invasive, in-situ diagnostic tool.
Comments12 pages, 6 figures
