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arXiv 1504.03085cond-mat.mtrl-sci
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Mn/$_x$/Ga $_{1-x}$薄膜中面内四面体c轴的透射电镜证据

Evidence for In-Plane Tetragonal c-axis in Mn$_x$Ga$_{1-x}$ Thin Films using Transmission Electron Microscopy

J. Karel, F. Casoli, P. Lupo, L. Nasi, S. Fabbrici, L. Righi, F. Albertini, C. Felser

摘要:

在SrTiO $_3$衬底上生长的四元Mn $_x$ Ga $_{1-x}$(x=0.70,0.75)薄膜在不同温度和厚度下表现出垂直磁各向异性,矫顽场在1-2 T之间。透射电子显微镜(TEM)和X射线衍射(XRD)表明,在300-350 $^{o}$ C生长的40 nm样品导致了多晶薄膜,其四角晶系c轴取向主要垂直于薄膜平面,但有一部分样品的c轴在薄膜平面内。这种结构导致面外磁化中的次级磁性分量。在300 $^{o}$ C下以减小的厚度或Mn浓度生长显著降低了膜平面中的四轴c轴的存在,从而改善了磁性能。TEM在表征这些材料方面至关重要,因为常规XRD不能总是识别额外的晶体取向的存在,尽管它们仍然可以影响磁性。我们的研究指出了控制这些薄膜微观结构的方法,这对于在自旋电子器件中利用这种材料至关重要。

英文摘要:

Tetragonal Mn$_x$Ga$_{1-x}$ (x=0.70, 0.75) thin films grown on SrTiO$_3$ substrates at different temperatures and thicknesses exhibit perpendicular magnetic anisotropy with coercive fields between 1-2 T. Transmission electron microscopy (TEM) and X-ray diffraction (XRD) reveal that 40nm samples grown at 300-350$^{o}$C lead to polycrystalline films with the tetragonal c-axis oriented primarily perpendicular to the film plane but with some fraction of the sample exhibiting the c-axis in the film plane. This structure results in a secondary magnetic component in the out of plane magnetization. Growth at 300$^{o}$C with a reduced thickness or Mn concentration significantly decreases the presence of the tetragonal c-axis in the film plane, thus improving the magnetic properties. TEM is of critical importance in characterizing these materials, since conventional XRD cannot always identify the presence of additional crystallographic orientations although they can still affect the magnetic properties. Our study points to ways that the microstructure of these thin films can be controlled, which is critical for utilization of this material in spintronic devices.

机构、总结、中文摘要均由AI分析而来,可能存在错误,请以论文正文为准。

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