We calculate the resistivity contribution of tilted grain boundaries with varying parameters in sub-10nm diameter metallic nanowires. The results have been obtained with the Boltzmann transport equation and Fermi's golden rule, retrieving correct state-dependent relaxation times. The standard approximation schemes for the relaxation times are shown to fail when grain boundary tilt is considered. Grain boundaries tilted under the same angle or randomly tilted induce a resistivity decrease.
Majorana Josephson junctions in nanowire systems exhibit a pseudo-$4π$ period current-phase relation in the clean limit. In this work, we study how this current-phase relation responds to a tilted magnetic field in a disordered Majorana Josephson junction within the Bogoliubov-de Gennes approach. We show that the tilted magnetic field induces a $ϕ_0$ phase shift to the current-phase relation. Most importantly, we find that this $ϕ_0$-junction behavior is robust even in the presence of disorders.
Perpendicularly magnetized nanowires exhibit distinct domain wall types depending on the geometry. Wide wires contain Bloch walls, narrow wires Néel walls. Here, the transition region is investigated by direct imaging of the wall structure using high-resolution spin-polarized scanning electron microscopy. An achiral intermediate wall type is discovered that is unpredicted by established theoretical models. With the help of micromagnetic simulations, the formation of this novel wall type is explained.
A self-consistent analytical solution of the multi-subband Boltzmann transport equation with collision term describing grain boundary and surface roughness scattering is presented to study the resistivity scaling in metal nanowires. The different scattering mechanisms and the influence of their statistical parameters are analyzed. Instead of a simple power law relating the height or width of a nanowire to its resistivity, the picture appears to be more complicated due to quantum-mechanical scattering and quantization effects, especially for surface roughness scattering.
We have investigated the time-dependent fluctuations in electrical resistance, or noise, in high quality crystalline magnetic nanowires within nanoporous templates. The noise increases exponentially with increasing temperature and magnetic field, and has been analyzed in terms of domain wall depinning within the Neel-Brown framework. The frequency-dependence of noise also indicates a crossover from nondiffusive kinetics to long-range diffusion at higher temperatures, as well as a strong collective depinning, which need to be considered when implementing these nanowires in magnetoelectronic dev…
A modeling approach, based on an analytical solution of the semiclassical multi-subband Boltzmann transport equation, is presented to study resistivity scaling in metallic thin films and nanowires due to grain boundary and surface roughness scattering. While taking into account the detailed statistical properties of grains, roughness and barrier material as well as the metallic band structure and quantum mechanical aspects of scattering and confinement, the model does not rely on phenomenological fitting parameters.
We study the resistivity scaling in nanometer-sized metallic wires due to surface roughness and grain-boundaries, currently the main cause of electron scattering in nanoscaled interconnects. The resistivity has been obtained with the Boltzmann transport equation, adopting the relaxation time approximation (RTA) of the distribution function and the effective mass approximation for the conducting electrons. The relaxation times are calculated exactly, using Fermi's golden rule, resulting in a correct relaxation time for every sub-band state contributing to the transport. In general, the relaxati…
We have measured the electrical resistivity of a single strand of a ferromagnetic Ni nanowire of diameter 55 nm using a 4-probe method in the temperature range 3 K-300 K. The wire used is chemically pure and is a high quality oriented single crystalline sample in which the temperature independent residual resistivity is determined predominantly by surface scattering. Precise evaluation of the temperature dependent resistivity ($ρ$) allowed us to identify quantitatively the electron-phonon contribution (characterized by a Debye temperature $θ_R$) as well as the spin-wave contribution which is s…
We study longitudinal magnetotransport in disorder-free cylindrical Weyl semimetal nanowires. Our theory includes a magnetic flux $Φ$ piercing the nanowire and captures the finite curvature of the Fermi arc in the surface Brillouin zone through a boundary angle $α$. Electron backscattering by acoustic phonons via the deformation potential causes a finite resistivity which we evaluate by means of the semiclassical Boltzmann approach. We find that low-energy transport is dominated by surface states, where transport observables are highly sensitive to the angle $α$ and to Aharonov-Bohm phases due…
The single electron magnetotransport in a vertical bi-layer semiconductor nanowire made of InAlAs/InGaAs and AlGaAs/GaAs heterostructure is theoretically studied. The magnetic field is directed perpendicularily to the main (transport) axis of the quantum wire and both non-zero components of magnetic field, that is the transverse and the vertical ones, allow to change the magnitude of intra-layer and inter-layer subbands mixing, respectively. We analyze in detail the changes introduced to energy dispersion relation E(k) by strong titled magnetic field up to several teslas for a symmetric and an…
Ando's model provides a rigorous quantum-mechanical framework for electron-surface roughness scattering, based on the detailed roughness structure. We apply this method to metallic nanowires and improve the model introducing surface roughness distribution functions on a finite domain with analytical expressions for the average surface roughness matrix elements. This approach is valid for any roughness size and extends beyond the commonly used Prange-Nee approximation. The resistivity scaling is obtained from the self-consistent relaxation time solution of the Boltzmann transport equation and i…
Silver nanowires have great application potential in fields like flexible electronic devices, solar cells and transparent electrodes. It is critical and fundamental to study the thermal and electrical transport properties in a single silver nanowire. In this work, the thermal and electrical transport in an individual silver nanowire is characterized down to 35 K with the steady state electro-thermal technique. The results indicate that, at room temperature, the electrical resistivity increases by around 4 folds compared from that of its bulk counterpart. After fitting the temperature dependent…
The increasing resistance of Cu interconnects for decreasing dimensions is a major challenge in continued downscaling of integrated circuits beyond the 7-nm technology node as it leads to unacceptable signal delays and power consumption in computing. The resistivity of Cu increases due to electron scattering at surfaces and grain boundaries of the interconnects at the nanoscale. Topological semimetals, owing to their topologically protected surface states and suppressed electron backscattering, are promising material candidates to potentially replace current Cu interconnects as low-resistance …
We report on possibility of charge current generation in nanowire made of two tunnel coupled one-dimensional electron waveguides by means of single magnetic pulse lasting up to 20 ps. Existence of interlayer tunnel coupling plays a crucial role in the effect described here as it allows for hybridization of the wave functions localized in different layers which can be dynamically modified by applying a time changeable in-plane magnetic field. Results of time-dependent DFT calculations performed for a bilayer nanowire confining many electrons show that the effect of such magnetic hybridization r…
Valley splitting of Si/SiGe heterostructures in tilted magnetic fields
本文研究了高质量Si/Si $_{1-x}$ Ge $_x$异质结构中二维电子在倾斜磁场作用下的谷分裂。对于我们研究中的所有样品，填充因子$ν=3$（$Δ_3$）处的谷分裂在符合角之前和之后显著不同，在符合角处能级在费米能级处交叉。在重合的两侧，观察到$Δ_3$对电子密度的线性密度依赖性，而这两种配置的斜率相差超过两倍。我们认为，屏蔽的库仑相互作用从低洼的填充水平，这也解释了所观察到的自旋相关的电阻率，是负责的大差异$Δ_3$之前和之后的重合。
We have measured the quantum-interference magnetoresistances in two single indium tin oxide (ITO) nanowires between 0.25 and 40 K, by using the four-probe configuration method. The magnetoresistances are compared with the one-dimensional weak-(anti)localization theory to extract the electron dephasing length $L_ϕ$. We found, in a 60-nm diameter nanowire with a low resistivity of $ρ$(10 K) = 185 $μΩ$ cm, that $L_ϕ$ is long, increasing from 150 nm at 40 K to 520 nm at 0.25 K. Therefore, the nanowire reveals strict one-dimensional weak-localization effect up to several tens of degrees of Kelvin. …
We show that the Landau bands obtained in a two-dimensional lateral semiconductor superlattice with spin-orbit coupling (SOC) of the Rashba/Dresselhaus type, linear in the electron momentum, placed in a tilted magnetic field, do not follow the symmetry of the spatial modulation. Moreover, this phenomenology is found to depend on the relative tilt of magnetic field and on the SOC type: a) when only Rashba SOC exists and the magnetic field is tilted in the direction of the superlattice b) Dresselhaus SOC exists and the magnetic field is tilted in the direction perpendicular to the superlattice. …
Magnetoresistance and Hall coefficient of a graphene layer are investigated in the presence of a tilted magnetic field. We consider the graphene layer is assembled by either another graphene layer or a two-dimensional electron gas (2DEG) and an interlayer electron-electron interaction is modeled within Random Phase Approximation. Our calculated magnetoresistances show different interlayer screening effects between decoupled graphene-graphene and graphene-2DEG systems. We also analyze the dependence of dielectric materials as well as the distance between layers on magnetoresistances. The angle …
The helical edge states in a quantum spin Hall insulator are presumably protected by time- reversal symmetry. However, even in the presence of magnetic field which breaks time-reversal symmetry, the helical edge conduction can still exist, dubbed as pseudo quantum spin Hall effect. In this work, the effects of the magnetic fields on the pseudo quantum spin Hall effect and the phase transitions are studied. We show that an in-plane magnetic field drives a pseudo quantum spin Hall state to metallic state at a high field. Moreover, at a fixed in-plane magnetic field, an increasing out-of-plane ma…
Gunn (or Gunn-Hilsum) Effect and its associated negative differential resistivity (NDR) emanates from transfer of electrons between two different energy bands in a semiconductor. If applying a voltage (electric field) transfers electrons from an energy sub band of a low effective mass to a second one with higher effective mass, then the current drops. This manifests itself as a negative slope or NDR in the I-V characteristics of the device which is in essence due to the reduction of electron mobility. Recalling that mobility is inversely proportional to electron effective mass or curvature of …
The electrical conductivity of metallic carbon nanotubes (CNTs) quickly saturates with respect to bias voltage due to scattering from a large population of optical phonons. Decay of these dominant scatterers in pristine CNTs is too slow to offset an increased generation rate at high voltage bias. We demonstrate from first principles that encapsulation of 1D atomic chains within a single-walled CNT can enhance decay of "hot" phonons by providing additional channels for thermalisation. Pacification of the phonon population growth reduces electrical resistivity of metallic CNTs by 51% for an exam…
We study a Majorana-carrying quantum wire, driven into a trivial phase by breaking the spatial inversion symmetry with a tilted external magnetic field. Interestingly, we predict that a supercurrent applied in the proximate superconductor is able to restore the topological phase and therefore the Majorana end-states. Using Abelian bosonization, we further confirm this result in the presence of electron-electron interactions and show a profound connection of this phenomenon to the physics of a one-dimensional doped Mott-insulator. The present results have important applications in e.g., realizi…
The paper discusses mechanisms for decay of supercurrents in ultrathin superconducting wires driven by quantum fluctuations. We argue that momentum conservation strongly suppresses probability of such decay and estimate the rates for two decay channels: potential scattering of condensate due to the disorder and attenuation of the plasmon mode due to the presence of normal component, i.e., Ohmic losses. We find that while both mechanisms yield non-zero decay rates, their values are too small to provide any substantial contribution to the resistivity of the wires. The rate associated with the la…
Heat dissipation issues are the emerging challenges in the field of flexible electronics. Thermal management of flexible electronics creates a demand for flexible materials with highly anisotropic thermal conductivity, which work as heat spreaders to remove excess heat in the in-plane direction and as heat shields to protect human skin or device components under them from heating. This study proposes a self-assembled silver nanowire network with high thermal and electrical anisotropy with the potential to solve these challenges. The in-plane thermal conductivity of the network along the axial …
We present an effective low-energy theory of electron-phonon coupling effects for clean cylindrical topological insulator nanowires. Acoustic phonons are modelled by isotropic elastic continuum theory with stress-free boundary conditions. We take into account the deformation potential coupling between phonons and helical surface Dirac fermions, and also include electron-electron interactions within the bosonization approach. For half-integer values of the magnetic flux $Φ_B$ along the wire, the low-energy theory admits an exact solution since a topological protection mechanism then rules out p…
The possible quantum Hall ferromagnet at a filling factor $ν=0$ is investigated for the zero-energy (N=0) Landau level of the two dimensional massless Dirac fermions in $α$-(BEDT-TTF)$_2$I$_3$ under pressure with tilted cones and a twofold valley degeneracy resulting from time-reversal symmetry. In the case of the Dirac cones without tilting, the long-range Coulomb interaction in the N=0 Landau level exhibits the SU(2) valley-pseudo-spin symmetry even to the order $O(a/l_{\rm H})$, in contrast to $N \ne 0$ Landau levels, where $a$ and $l_{\rm H}$ represent the lattice constant and the magnetic…
