We systematically study the structures and electrical transport properties of a series of Sn-doped indium oxide (ITO) films with thickness $t$ ranging from $\sim$5 to $\sim$53\,nm. Scanning electron microscopy and x-ray diffraction results indicate that the $t\lesssim 16.8$\,nm films are polycrystalline, while those $t\gtrsim 26.7$\,nm films are epitaxially grown along [100] direction. For the epitaxial films, the Altshuler and Aronov electron-electron interaction (EEI) effect governs the temperature behaviors of the sheet conductance $σ_\square$ at low temperatures, and the ratios of relative change of Hall coefficient $ΔR_H/R_H$ to relative change of sheet resistance $ΔR_\square/R_\square$ are $\approx$2, which is quantitatively consistent with Altshuler and Aronov EEI theory and seldom observed in other systems. For those polycrystalline films, both the sheet conductance and Hall coefficient vary linearly with logarithm of temperature below several tens Kelvin, which can be well described by the current EEI theories in granular metals. We extract the intergranular tunneling conductance of each film by comparing the $σ_\square(T)$ data with the predication of EEI theories in granular metals. It is found that when the tunneling conductance is less than the conductance of a single indium tin oxide (ITO) grain, the ITO film reveals granular metal characteristics in transport properties, conversely, the film shows transport properties of homogeneous disordered conductors. Our results indicate that electrical transport measurement can not only reveal the underlying charge transport properties of the film but also be a powerful tool to detect the subtle homogeneity of the film.
In this work, we observe plasmon induced hot electron extraction in a heterojunction between indium tin oxide nanocrystals and monolayer molybdenum disulphide. We study the sample with ultrafast differential transmission exciting the sample at 1750 nm where the intense localized plasmon surface resonance of the indium tin oxide nanocrystals is and where the monolayer molybdenum disulphide does not absorb light. With the excitation at 1750 nm we observe the excitonic features of molybdenum disulphide in the visible range, close to the exciton of molybdenum disulphide. Such phenomenon can be asc…
In this work, we demonstrate scaled back-end-of-line (BEOL) compatible indium oxide (In2O3) transistors by atomic layer deposition (ALD) with channel thickness (Tch) of 1.0-1.5 nm, channel length (Lch) down to 40 nm, and equivalent oxide thickness (EOT) of 2.1 nm, with record high drain current of 2.0 A/mm at VDS of 0.7 V among all oxide semiconductors. Enhancement-mode In2O3 transistors with ID over 1.0 A/mm at VDS of 1 V are also achieved by controlling the channel thickness down to 1.0 nm at atomic layer scale. Such high current density in a relatively low mobility amorphous oxide semicondu…
In order to continue to improve integrated circuit performance and functionality, scaled transistors with short channel lengths and low thickness are needed. But the further scaling of silicon-based devices and the development of alternative semiconductor channel materials that are compatible with current fabrication processes is challenging. Here we report atomic-layer-deposited indium oxide transistors with channel lengths down to 8 nm, channel thicknesses down to 0.5 nm and equivalent dielectric oxide thickness down to 0.84 nm. Due to the scaled device dimensions and low contact resistance,…
We report on a comprehensive theoretical and experimental investigation of thermal conductivity in indium-tin-oxide (ITO) thin films with various Ga concentrations (0-30 at. %) deposited by spray pyrolysis technique. X-Ray diffraction (XRD) and scanning electron microscopy have shown a structural transformation in the range 15-20 at. % Ga from the nanocrystalline to the amorphous phase. Room temperature femtosecond time domain thermoreflectance measurements showed nonlinear decrease of thermal conductivity in the range 2.0-0.5 W/(m K) depending on Ga doping level. Comparing density functional …
In this work, we demonstrate high performance indium-tin-oxide (ITO) transistors with the channel thickness down to 1 nm and ferroelectric Hf0.5Zr0.5O2 as gate dielectric. On-current of 0.243 A/mm is achieved on sub-micron gate-length ITO transistors with a channel thickness of 1 nm, while it increases to as high as 1.06 A/mm when the channel thickness increases to 2 nm. A raised source/drain structure with a thickness of 10 nm is employed, contributing to a low contact resistance of 0.15 Ωmm and a low contact resistivity of 1.1{\times}10-7 Ωcm2. The ITO transistor with a recessed channel and …
In bulk semiconductor materials, the insulator-metal transition (IMT) is governed by the concentration of conduction electrons. Meanwhile, even when fabricated from metallic building blocks, nanocrystal films are often insulating with inter-nanocrystal contacts acting as electron transport bottlenecks. Using a library of transparent conducting tin-doped indium oxide nanocrystal films with varied electron concentration, size, and contact area, we test candidate criteria for the IMT and establish a phase diagram for electron transport behavior. From variable temperature conductivity measurements…
